US2014131835A1PendingUtilityA1
Semiconductor device with rutile titanium oxide dielectric film
Est. expiryNov 12, 2032(~6.3 yrs left)· nominal 20-yr term from priority
H10P 14/69394H10P 14/6339C23C 16/405C23C 16/45527H10D 1/68H10D 1/692H01L 29/92
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Claims
Abstract
A capacitor structure includes a first electrode on a substrate; a template layer on the first electrode; a titanium oxide (TiO2) dielectric layer on the template layer, wherein the TiO2 dielectric layer has substantially only rutile phase; and a second electrode on the TiO2 dielectric layer. The titanium oxide dielectric layer is an undoped titanium oxide dielectric layer.
Claims
exact text as granted — not AI-modified1 . A capacitor structure comprising:
a first electrode on a substrate; a template layer on the first electrode; an undoped titanium oxide (TiO2) dielectric layer on the template layer, wherein the undoped TiO2 dielectric layer has substantially only rutile phase; and a second electrode on the undoped TiO2 dielectric layer.
2 . The capacitor structure according to claim 1 wherein the first electrode comprises Ru.
3 . The capacitor structure according to claim 1 wherein the template layer comprises Ru, RuO2, Ir, or IrO2.
4 . The capacitor structure according to claim 1 wherein the second electrode comprises Ru, Pt or Ir, RuO2, IrO2, TiN, TaN, or WN.Join the waitlist — get patent alerts
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