Inventor · disambiguated record
Puneet Khanna
Also filed as: KHANNA PUNEET · KHANNA PUNEET K
14 granted patents·6 pending applications·80 citations·filing 2004–2021
89Inventor score
Top patents by PatentIndex Score
20 records- 0194US9024368B1Fin-type transistor structures with extended embedded stress elements and fabrication methodsGLOBALFOUNDRIES INC·Filed 2013·Granted May 5, 2015·29 cites·18 claims
- 0272US9099525B2Blanket EPI super steep retrograde well formation without Si recessKANG LAEGU·Filed 2012·Granted Aug 4, 2015·4 cites·11 claims
- 0372US8916442B2Method of forming step doping channel profile for super steep retrograde well field effect transistor and resulting deviceGLOBALFOUNDRIES INC·Filed 2013·Granted Dec 23, 2014·2 cites·12 claims
- 0471US8348971B2Apparatus and methods for facilitating hemostasis within a vascular punctureACCESSCLOSURE INC·Filed 2004·Granted Jan 8, 2013·40 cites·40 claims
- 0570US8690912B2Apparatus and methods for facilitating hemostasis within a vascular punctureACCESSCLOSURE INC·Filed 2012·Granted Apr 8, 2014·3 cites·27 claims
- 0661US9375214B2Apparatus and methods for facilitating hemostasis within a vascular punctureACCESSCLOSURE INC·Filed 2014·Granted Jun 28, 2016·1 cites·16 claims
- 0757US10483172B2Transistor device structures with retrograde wells in CMOS applicationsGLOBALFOUNDRIES INC·Filed 2017·Granted Nov 19, 2019·0 cites·16 claims
- 0857US9099380B2Method of forming step doping channel profile for super steep retrograde well field effect transistor and resulting deviceGLOBALFOUNDRIES INC·Filed 2014·Granted Aug 4, 2015·0 cites·20 claims
- 0953US9852954B2Methods of forming transistors with retrograde wells in CMOS applications and the resulting device structuresGLOBALFOUNDRIES INC·Filed 2015·Granted Dec 26, 2017·0 cites·19 claims
- 1052US9526885B1Microneedles with sharpened tips and corresponding method of fabricationKHANNA PUNEET·Filed 2014·Granted Dec 27, 2016·1 cites·16 claims
- 1152US9209181B2Methods of forming transistors with retrograde wells in CMOS applications and the resulting device structuresGLOBALFOUNDRIES INC·Filed 2013·Granted Dec 8, 2015·0 cites·10 claims
- 1249US9362357B2Blanket EPI super steep retrograde well formation without Si recessGLOBALFOUNDRIES INC·Filed 2015·Granted Jun 7, 2016·0 cites·20 claims
- 1345US8927356B1Removal of nitride bump in opening replacement gate structureGLOBALFOUNDRIES INC·Filed 2013·Granted Jan 6, 2015·0 cites·20 claims
- 1444US9356147B2FinFET spacer etch for eSiGe improvementGLOBALFOUNDRIES INC·Filed 2013·Granted May 31, 2016·0 cites·18 claims
- 1542US2015087134A1Semiconductor isolation region uniformityGLOBALFOUNDRIES INC·Filed 2013·Application pending·0 cites
- 1642US2015051625A1Treating Occlusions within Body VesselsPETRUCCI GARY·Filed 2013·Application pending·0 cites
- 1739US2014179093A1Gate structure formation processesGLOBALFOUNDRIES INC·Filed 2012·Application pending·0 cites
- 1839US2023355988A1Transvenous pacing systemKHANNA PUNEET·Filed 2021·Application pending·0 cites
- 1938US2014070358A1Method of tailoring silicon trench profile for super steep retrograde well field effect transistorQI YI·Filed 2012·Application pending·0 cites
- 2032US2013224944A1Methods for fabricating integrated circuits using tailored chamfered gate liner profilesKHANNA PUNEET·Filed 2012·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →