Inventor · disambiguated record
Edward W. Kiewra
Also filed as: KIEWRA EDWARD · KIEWRA EDWARD W · KIEWRA EDWARD WILLIAM
56 granted patents·4 pending applications·688 citations·filing 1995–2024
98Inventor score
Top patents by PatentIndex Score
60 records- 0198US11378743B1Optical components in the back-end-of-line stack of a photonics chip using plural cores vertically stackedGLOBALFOUNDRIES US INC·Filed 2021·Granted Jul 5, 2022·12 cites·20 claims
- 0298US8525169B1Reliable physical unclonable function for device authenticationEDELSTEIN DANIEL C·Filed 2012·Granted Sep 3, 2013·115 cites·23 claims
- 0397US6383920B1Process of enclosing via for improved reliability in dual damascene interconnectsIBM·Filed 2001·Granted May 7, 2002·179 cites·27 claims
- 0495US11520113B1Photodetectors and terminators including a tapered thicknessGLOBALFOUNDRIES US INC·Filed 2021·Granted Dec 6, 2022·4 cites·20 claims
- 0595US9466753B1Photodetector methods and photodetector structuresGLOBALFOUNDRIES INC·Filed 2015·Granted Oct 11, 2016·8 cites·14 claims
- 0693US8610172B2FETs with hybrid channel materialsGUO DECHAO·Filed 2011·Granted Dec 17, 2013·17 cites·21 claims
- 0788US12405423B2Hybrid edge couplers with voidsGLOBALFOUNDRIES US INC·Filed 2022·Granted Sep 2, 2025·1 cites·20 claims
- 0888US9508640B2Multiple via structure and methodGLOBALFOUNDRIES INC·Filed 2013·Granted Nov 29, 2016·9 cites·17 claims
- 0988US7964896B2Buried channel MOSFET using III-V compound semiconductors and high k gate dielectricsIBM·Filed 2008·Granted Jun 21, 2011·13 cites·29 claims
- 1087US6420749B1Trench field shield in trench isolationIBM·Filed 2000·Granted Jul 16, 2002·48 cites·13 claims
- 1184US8415772B2Method to prevent surface decomposition of III-V compound semiconductorsDE SOUZA JOEL P·Filed 2012·Granted Apr 9, 2013·5 cites·12 claims
- 1284US6444565B1Dual-rie structure for via/line interconnectionsIBM·Filed 2001·Granted Sep 3, 2002·34 cites·20 claims
- 1382US7560375B2Gas dielectric structure forming methodsIBM·Filed 2004·Granted Jul 14, 2009·34 cites·12 claims
- 1481US10103280B1Rapid melt growth photodetectorIBM·Filed 2017·Granted Oct 16, 2018·3 cites·25 claims
- 1581US7102204B2Integrated SOI fingered decoupling capacitorIBM·Filed 2004·Granted Sep 5, 2006·24 cites·18 claims
- 1679US9678273B2Device for propagating light and method for fabricating a deviceIBM·Filed 2015·Granted Jun 13, 2017·3 cites·13 claims
- 1779US9658400B2Method for fabricating a device for propagating lightIBM·Filed 2015·Granted May 23, 2017·3 cites·13 claims
- 1879US7674675B2Method of forming an integrated SOI fingered decoupling capacitorIBM·Filed 2006·Granted Mar 9, 2010·7 cites·13 claims
- 1976US9136303B2CMOS protection during germanium photodetector processingIBM·Filed 2013·Granted Sep 15, 2015·1 cites·13 claims
- 2075US2024210621A1Photonic integrated circuit structure with at least one tapered sidewall liner adjacent to a waveguide coreGLOBALFOUNDRIES US INC·Filed 2024·Application pending·0 cites
- 2174US6486526B1Crack stop between neighboring fuses for protection from fuse blow damageIBM·Filed 1999·Granted Nov 26, 2002·42 cites·7 claims
- 2273US9304335B2Integrated LDMOS devices for silicon photonicsIBM·Filed 2014·Granted Apr 5, 2016·2 cites·16 claims
- 2373US9036959B2Intergrating a silicon photonics photodetector with CMOS devicesIBM·Filed 2013·Granted May 19, 2015·3 cites·22 claims
- 2472US7287325B2Method of forming interconnect structure or interconnect and via structures using post chemical mechanical polishingIBM·Filed 2005·Granted Oct 30, 2007·3 cites·7 claims
- 2570US9343545B2Electrical coupling of memory cell access devices to a word lineIBM·Filed 2013·Granted May 17, 2016·3 cites·8 claims
- 2670US8895352B2Method to improve nucleation of materials on graphene and carbon nanotubesBABICH KATHERINA·Filed 2009·Granted Nov 25, 2014·3 cites·20 claims
- 2770US8816333B2Method to improve nucleation of materials on graphene and carbon nanotubesBABICH KATHERINA·Filed 2012·Granted Aug 26, 2014·2 cites·16 claims
- 2869US11994714B2Photonic integrated circuit structure with at least one tapered sidewall liner adjacent to a waveguide coreGLOBALFOUNDRIES US INC·Filed 2021·Granted May 28, 2024·0 cites·8 claims
- 2969US9704958B1III-V field effect transistor on a dielectric layerIBM·Filed 2015·Granted Jul 11, 2017·1 cites·15 claims
- 3068US7119545B2Capacitive monitors for detecting metal extrusion during electromigrationIBM·Filed 2004·Granted Oct 10, 2006·11 cites·11 claims
- 3168US6566238B2Metal wire fuse structure with cavityINFINEON TECHNOLOGIES AG·Filed 2001·Granted May 20, 2003·12 cites·14 claims
- 3267US9287115B2Planar III-V field effect transistor (FET) on dielectric layerIBM·Filed 2014·Granted Mar 15, 2016·1 cites·20 claims
- 3365US9590001B2CMOS protection during germanium photodetector processingIBM·Filed 2015·Granted Mar 7, 2017·1 cites·19 claims
- 3464US8809860B2III-V compound semiconductor material passivation with crystalline interlayerIBM·Filed 2013·Granted Aug 19, 2014·1 cites·9 claims
- 3564US8431476B2Method to prevent surface decomposition of III-V compound semiconductorsDE SOUZA JOEL P·Filed 2012·Granted Apr 30, 2013·1 cites·20 claims
- 3664US7129557B2Autonomic thermal monitor and controller for thin film devicesIBM·Filed 2004·Granted Oct 31, 2006·11 cites·13 claims
- 3763US9299804B2Electrical coupling of memory cell access devices to a word lineIBM·Filed 2013·Granted Mar 29, 2016·1 cites·14 claims
- 3861US6433436B1Dual-RIE structure for via/line interconnectionsIBM·Filed 1999·Granted Aug 13, 2002·22 cites·10 claims
- 3960US11774686B2Edge couplers including a rounded region adjacent to an opening in the interconnect structureGLOBALFOUNDRIES US INC·Filed 2021·Granted Oct 3, 2023·0 cites·20 claims
- 4060US11143953B2Protection of photomasks from 193nm radiation damage using thin coatings of ALD Al2O3IBM·Filed 2019·Granted Oct 12, 2021·0 cites·19 claims
- 4159US8525290B2Method of forming memory cell access deviceLAI ERH-KUN·Filed 2011·Granted Sep 3, 2013·1 cites·25 claims
- 4257US9954137B2Photodetector and methods of manufactureGLOBALFOUNDRIES INC·Filed 2017·Granted Apr 24, 2018·0 cites·20 claims
- 4357US8524614B2III-V compound semiconductor material passivation with crystalline interlayerSHIU KUEN-TING·Filed 2010·Granted Sep 3, 2013·1 cites·17 claims
- 4457US7078259B2Method for integrating thermistorIBM·Filed 2004·Granted Jul 18, 2006·7 cites·18 claims
- 4556US11611002B2Photodiode and/or pin diode structuresGLOBALFOUNDRIES US INC·Filed 2020·Granted Mar 21, 2023·0 cites·19 claims
- 4654US8273649B2Method to prevent surface decomposition of III-V compound semiconductorsDE SOUZA JOEL P·Filed 2008·Granted Sep 25, 2012·0 cites·15 claims
- 4753US10014377B2III-V field effect transistor on a dielectric layerIBM·Filed 2017·Granted Jul 3, 2018·0 cites·20 claims
- 4853US9882021B2Planar III-V field effect transistor (FET) on dielectric layerIBM·Filed 2016·Granted Jan 30, 2018·0 cites·13 claims
- 4952US9882081B2Photodetector methods and photodetector structuresGLOBALFOUNDRIES INC·Filed 2016·Granted Jan 30, 2018·0 cites·19 claims
- 5051US5670018AIsotropic silicon etch process that is highly selective to tungstenSIEMENS AG·Filed 1995·Granted Sep 23, 1997·21 cites·20 claims
Showing the top 50 of 60 patent records by PatentIndex Score.
Join the waitlist — get patent alerts
Get an alert when Edward W. Kiewra files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →