Inventor · disambiguated record
Yong Yang
Also filed as: YANG YONG · YANG YONG MO
20 granted patents·7 pending applications·11 citations·filing 2017–2025
90Inventor score
Top patents by PatentIndex Score
27 records- 0195US12022650B2Low resistivity DRAM buried word line stackAPPLIED MATERIALS INC·Filed 2023·Granted Jun 25, 2024·2 cites·20 claims
- 0294US11587936B2Low resistivity DRAM buried word line stackAPPLIED MATERIALS INC·Filed 2021·Granted Feb 21, 2023·2 cites·20 claims
- 0393US11417517B2Treatments to enhance material structuresAPPLIED MATERIALS INC·Filed 2020·Granted Aug 16, 2022·2 cites·20 claims
- 0482US2024266163A1Treatments to enhance material structuresAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 0578US11961734B2Treatments to enhance material structuresAPPLIED MATERIALS INC·Filed 2022·Granted Apr 16, 2024·0 cites·10 claims
- 0678US11955332B2Treatments to enhance material structuresAPPLIED MATERIALS INC·Filed 2022·Granted Apr 9, 2024·0 cites·18 claims
- 0778US11522068B2IC product comprising an insulating gate separation structure positioned between end surfaces of adjacent gate structuresGLOBALFOUNDRIES US INC·Filed 2019·Granted Dec 6, 2022·2 cites·9 claims
- 0876US10453936B2Methods of forming replacement gate structures on transistor devicesGLOBALFOUNDRIES INC·Filed 2017·Granted Oct 22, 2019·2 cites·20 claims
- 0975US12051734B2PMOS high-k metal gatesAPPLIED MATERIALS INC·Filed 2022·Granted Jul 30, 2024·0 cites·13 claims
- 1074US2025267842A1Methods of Utilizing Etch-Stop Material During Fabrication of Capacitors, Integrated Assemblies Comprising CapacitorsMICRON TECHNOLOGY INC·Filed 2025·Application pending·0 cites
- 1172US2024268108A1V-nand stacks with dipole regionsAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 1270US10832966B2Methods and structures for a gate cutGLOBALFOUNDRIES INC·Filed 2018·Granted Nov 10, 2020·1 cites·11 claims
- 1366US11997849B2V-NAND stacks with dipole regionsAPPLIED MATERIALS INC·Filed 2021·Granted May 28, 2024·0 cites·19 claims
- 1466US11552177B2PMOS high-K metal gatesAPPLIED MATERIALS INC·Filed 2020·Granted Jan 10, 2023·0 cites·7 claims
- 1562US12324143B2Methods of utilizing etch-stop material during fabrication of capacitors, integrated assemblies comprising capacitorsMICRON TECHNOLOGY INC·Filed 2020·Granted Jun 3, 2025·0 cites·9 claims
- 1662US12183798B2Threshold voltage modulation for gate-all-around FET architectureAPPLIED MATERIALS INC·Filed 2021·Granted Dec 31, 2024·0 cites·20 claims
- 1759US12114488B2Enhancing gapfill performance of dram word lineAPPLIED MATERIALS INC·Filed 2021·Granted Oct 8, 2024·0 cites·13 claims
- 1858US12230688B2MOSFET gate engineerinng with dipole filmsAPPLIED MATERIALS INC·Filed 2022·Granted Feb 18, 2025·0 cites·10 claims
- 1957US12438044B2Methods and apparatus for seam reduction or eliminationAPPLIED MATERIALS INC·Filed 2021·Granted Oct 7, 2025·0 cites·3 claims
- 2057US11869806B2Methods of forming molybdenum contactsAPPLIED MATERIALS INC·Filed 2021·Granted Jan 9, 2024·0 cites·16 claims
- 2157US2023377901A1Methods for patterning substrates to adjust voltage propertiesAPPLIED MATERIALS INC·Filed 2023·Application pending·0 cites
- 2256US12199094B2Apparatuses including Finfets having different gate oxide configurations, and related computing systemsMICRON TECHNOLOGY INC·Filed 2021·Granted Jan 14, 2025·0 cites·13 claims
- 2355US12100595B2Amorphous silicon-based scavenging and sealing EOTAPPLIED MATERIALS INC·Filed 2021·Granted Sep 24, 2024·0 cites·19 claims
- 2455US2025112052A1Directional rie feature rectangularityAPPLIED MATERIALS INC·Filed 2023·Application pending·0 cites
- 2550US11594536B2Integrated assemblies and semiconductor memory devicesMICRON TECHNOLOGY INC·Filed 2021·Granted Feb 28, 2023·0 cites·17 claims
- 2650US2024060175A1Conformal molybdenum depositionAPPLIED MATERIALS INC·Filed 2022·Application pending·0 cites
- 2749US2022165852A1Methods and apparatus for metal fill in metal gate stackAPPLIED MATERIALS INC·Filed 2021·Application pending·0 cites
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