Inventor · disambiguated record
Hari Prasad Amanapu
Also filed as: AMANAPU HARI P · AMANAPU HARI PRASAD
18 granted patents·2 pending applications·37 citations·filing 2017–2021
90Inventor score
Files withIBM20
Top patents by PatentIndex Score
20 records- 0197US10204829B1Low-resistivity metallic interconnect structures with self-forming diffusion barrier layersIBM·Filed 2018·Granted Feb 12, 2019·21 cites·13 claims
- 0287US10559530B2Forming dual metallization interconnect structures in single metallization levelIBM·Filed 2017·Granted Feb 11, 2020·4 cites·12 claims
- 0380US10978388B2Skip via for metal interconnectsIBM·Filed 2018·Granted Apr 13, 2021·3 cites·7 claims
- 0480US10832946B1Recessed interconnet line having a low-oxygen cap for facilitating a robust planarization process and protecting the interconnect line from downstream etch operationsIBM·Filed 2019·Granted Nov 10, 2020·3 cites·20 claims
- 0574US10833173B2Low-resistance top contact on VTFETIBM·Filed 2018·Granted Nov 10, 2020·1 cites·8 claims
- 0672US11031337B2Forming dual metallization interconnect structures in single metallization levelIBM·Filed 2019·Granted Jun 8, 2021·1 cites·14 claims
- 0771US10818589B2Metal interconnect structures with self-forming sidewall barrier layerIBM·Filed 2019·Granted Oct 27, 2020·2 cites·18 claims
- 0871US10373867B2Cobalt contact and interconnect structuresIBM·Filed 2017·Granted Aug 6, 2019·1 cites·19 claims
- 0969US10177030B2Cobalt contact and interconnect structuresIBM·Filed 2017·Granted Jan 8, 2019·1 cites·1 claims
- 1060US11908923B2Low-resistance top contact on VTFETIBM·Filed 2020·Granted Feb 20, 2024·0 cites·7 claims
- 1159US11037875B2Forming dual metallization interconnect structures in single metallization levelIBM·Filed 2019·Granted Jun 15, 2021·0 cites·20 claims
- 1258US11800817B2Phase change memory cell galvanic corrosion preventionIBM·Filed 2021·Granted Oct 24, 2023·0 cites·11 claims
- 1356US11024720B2Non-self aligned contact semiconductor devicesIBM·Filed 2019·Granted Jun 1, 2021·0 cites·20 claims
- 1452US10833122B2Bottom electrode and dielectric structure for MRAM applicationsIBM·Filed 2019·Granted Nov 10, 2020·0 cites·16 claims
- 1552US2019221477A1Low-resistivity metallic interconnect structures with self-forming diffusion barrier layersIBM·Filed 2018·Application pending·0 cites
- 1651US11037795B2Planarization of dielectric topography and stopping in dielectricIBM·Filed 2019·Granted Jun 15, 2021·0 cites·16 claims
- 1750US11637036B2Planarization stop region for use with low pattern density interconnectsIBM·Filed 2020·Granted Apr 25, 2023·0 cites·10 claims
- 1845US2021143061A1Hybrid metallization and dielectric interconnects in top via configurationIBM·Filed 2019·Application pending·0 cites
- 1944US11127825B2Middle-of-line contacts with varying contact area providing reduced contact resistanceIBM·Filed 2019·Granted Sep 21, 2021·0 cites·20 claims
- 2044US10916431B2Robust gate cap for protecting a gate from downstream metallization etch operationsIBM·Filed 2019·Granted Feb 9, 2021·0 cites·11 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →