Inventor · disambiguated record
Fredrick Fishburn
Also filed as: FISHBURN FREDRICK · FISHBURN FREDRICK D · FISHBURN FREDRICK DAVID
23 granted patents·31 pending applications·44 citations·filing 2003–2025
93Inventor score
Top patents by PatentIndex Score
54 records- 0196US11818877B2Three-dimensional dynamic random access memory (DRAM) and methods of forming the sameAPPLIED MATERIALS INC·Filed 2021·Granted Nov 14, 2023·2 cites·18 claims
- 0293US11696433B23D pitch multiplicationAPPLIED MATERIALS INC·Filed 2021·Granted Jul 4, 2023·2 cites·17 claims
- 0389US10672456B2Three dimensional memory devicesMICRON TECHNOLOGY INC·Filed 2019·Granted Jun 2, 2020·7 cites·20 claims
- 0485US11501804B2Microelectronic devices including semiconductive pillar structures, and related electronic systemsMICRON TECHNOLOGY INC·Filed 2020·Granted Nov 15, 2022·2 cites·25 claims
- 0583US10833087B2Semiconductor devices including transistors comprising a charge trapping material, and related systems and methodsMICRON TECHNOLOGY INC·Filed 2018·Granted Nov 10, 2020·5 cites·27 claims
- 0682US11081487B2Devices having a transistor and a capacitor along a common horizontal level, and methods of forming devicesMICRON TECHNOLOGY INC·Filed 2020·Granted Aug 3, 2021·1 cites·21 claims
- 0780US2025120068A1Precursor structure for self-aligned bit line and storage node contacts for 4f2 dramAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 0880US2025120065A1Self-aligned storage node contacts for 4f2 dramAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 0980US2025120069A1Self-aligned bit line for 4f2 dramAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 1076US12473644B2Growth of thin oxide layer with silicon nitride and conversionAPPLIED MATERIALS INC·Filed 2024·Granted Nov 18, 2025·0 cites·23 claims
- 1176US8309427B2Manufacturing method for FIN-FET having floating bodyFISHBURN FREDRICK DAVID·Filed 2010·Granted Nov 13, 2012·9 cites·10 claims
- 1275US10153027B1Memory arrays, and methods of forming memory arraysMICRON TECHNOLOGY INC·Filed 2018·Granted Dec 11, 2018·1 cites·12 claims
- 1375US10083734B1Memory arraysMICRON TECHNOLOGY INC·Filed 2017·Granted Sep 25, 2018·1 cites·14 claims
- 1473US11626406B2Devices having a transistor and a capacitor along a common horizontal level, and methods of forming devicesMICRON TECHNOLOGY INC·Filed 2021·Granted Apr 11, 2023·0 cites·36 claims
- 1572US10707210B2Devices having a transistor and a capacitor along a common horizontal level, and methods of forming devicesMICRON TECHNOLOGY INC·Filed 2018·Granted Jul 7, 2020·1 cites·20 claims
- 1671US7501672B2Method and structure for a self-aligned silicided word line and polysilicon plug during the formation of a semiconductor deviceMICRON TECHNOLOGY INC·Filed 2006·Granted Mar 10, 2009·4 cites·20 claims
- 1768US2025380398A1Structures and methods for forming 4f2 dynamic random-access devicesAPPLIED MATERIALS INC·Filed 2025·Application pending·0 cites
- 1867US12464702B2Three-dimensional dynamic random-access memory (3D DRAM) gate all-around (GAA) design using stacked Si/SiGeAPPLIED MATERIALS INC·Filed 2021·Granted Nov 4, 2025·0 cites·14 claims
- 1967US10242726B1Memory arrays, and methods of forming memory arraysMICRON TECHNOLOGY INC·Filed 2018·Granted Mar 26, 2019·1 cites·22 claims
- 2067US2025227915A1Methods and devices for reduced floating body effect in advanced dramAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 2167US2025063716A1Storage node contact (snc) junction formation for three-dimensional dynamic random access memory (dram)APPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 2266US2025163573A1Methods for forming molybdenum surfaces with increased diffusion barrierAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 2365US2025351335A1Method and structure of low-k spacer using post-treatment for memory applicationsAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 2465US2024431093A1Dual field effect transistor 4f2 cellAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 2564US2025107068A1Dual work function word line for 4f2APPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 2664US2025351329A1Non-line-of-sight junction formationAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 2764US2025246426A1Growth of thin oxide layer in vertical channel structureAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 2863US2025185230A1Methods of forming memory structures using seamless gapfillAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 2963US2025081432A1Gate all around 4f2 dramAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 3063US2025126774A13-d dram wordline partition and staircase contactsAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 3162US2024341082A14f2 vertical access transistor with reduced floating body effectAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 3261US11765889B2Method to scale dram with self aligned bit line processAPPLIED MATERIALS INC·Filed 2022·Granted Sep 19, 2023·0 cites·20 claims
- 3361US2025259895A1Metal signal or powerline separation through selective deposition in advanced memory devicesAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 3461US2024395553A1High aspect ratio junction formation through gas phase dopingAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 3560US12148475B2Selection gate separation for 3D NANDAPPLIED MATERIALS INC·Filed 2022·Granted Nov 19, 2024·0 cites·20 claims
- 3660US7119024B2Method and structure for a self-aligned silicided word line and polysilicon plug during the formation of a semiconductor deviceMICRON TECHNOLOGY INC·Filed 2003·Granted Oct 10, 2006·8 cites·35 claims
- 3760US2025234522A1Bitline surface treatment and encapsulation in dynamic random-access memory (dram) devicesAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 3860US2024332023A1Method of making silicide in high-aspect ratio structures by hybrid processesAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 3960US2024429048A1REDUCED STRAIN AND STOP LAYER FOR Si/SiGe EPI STACKSAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 4060US2024347602A1Reduced strain heteroepitaxy assembly for three-dimensional device and method of fabrication thereforAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 4160US2025037997A1EPITAXIAL GROWTH OF STRAINED Si/SiGe SUPERLATTICEAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 4259US2025113522A13D Memory Mold Film StackAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 4358US11974423B2Replacement channel process for three-dimensional dynamic random access memoryAPPLIED MATERIALS INC·Filed 2021·Granted Apr 30, 2024·0 cites·19 claims
- 4458US2024215223A1Hole-type sadp for 2d dram capacitorAPPLIED MATERIALS INC·Filed 2023·Application pending·0 cites
- 4558US2023309295A1Support layer for small pitch fillAPPLIED MATERIALS INC·Filed 2023·Application pending·0 cites
- 4657US2023380145A1Self-aligned vertical bitline for three-dimensional (3d) dynamic random-access memory (dram) devicesAPPLIED MATERIALS INC·Filed 2023·Application pending·0 cites
- 4756US12284803B2System and methods for dram contact formationAPPLIED MATERIALS INC·Filed 2022·Granted Apr 22, 2025·0 cites·20 claims
- 4856US12207458B2Methods and apparatus for hierarchical bitline for three-dimensional dynamic random-access memoryAPPLIED MATERIALS INC·Filed 2022·Granted Jan 21, 2025·0 cites·20 claims
- 4956US2023055158A1Semiconductor isolation bridge for three-dimensional dynamic random-access memoryAPPLIED MATERIALS INC·Filed 2022·Application pending·0 cites
- 5055US2024038833A1Carbon mold for dram capacitorAPPLIED MATERIALS INC·Filed 2023·Application pending·0 cites
Showing the top 50 of 54 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →