Inventor · disambiguated record
Bingxi Wood
Also filed as: WOOD BINGXI · WOOD BINGXI SUN
16 granted patents·4 pending applications·360 citations·filing 2004–2022
93Inventor score
Top patents by PatentIndex Score
20 records- 0198US9484406B1Method for fabricating nanowires for horizontal gate all around devices for semiconductor applicationsAPPLIED MATERIALS INC·Filed 2015·Granted Nov 1, 2016·79 cites·18 claims
- 0296US7604708B2Cleaning of native oxide with hydrogen-containing radicalsAPPLIED MATERIALS INC·Filed 2004·Granted Oct 20, 2009·226 cites·16 claims
- 0394US9673277B2Methods and apparatus for forming horizontal gate all around device structuresAPPLIED MATERIALS INC·Filed 2015·Granted Jun 6, 2017·13 cites·19 claims
- 0490US10777650B2Horizontal gate all around device nanowire air gap spacer formationAPPLIED MATERIALS INC·Filed 2017·Granted Sep 15, 2020·5 cites·20 claims
- 0590US8652951B2Selective epitaxial germanium growth on silicon-trench fill and in situ dopingAPPLIED MATERIALS INC·Filed 2013·Granted Feb 18, 2014·11 cites·15 claims
- 0687US9865735B2Horizontal gate all around and FinFET device isolationAPPLIED MATERIALS INC·Filed 2016·Granted Jan 9, 2018·4 cites·14 claims
- 0783US11145761B2Horizontal gate all around and FinFET device isolationAPPLIED MATERIALS INC·Filed 2019·Granted Oct 12, 2021·2 cites·17 claims
- 0879US8999829B2Dual gate processAPPLIED MATERIALS INC·Filed 2013·Granted Apr 7, 2015·5 cites·17 claims
- 0978US9960275B1Method of fabricating air-gap spacer for N7/N5 finFET and beyondAPPLIED MATERIALS INC·Filed 2017·Granted May 1, 2018·2 cites·20 claims
- 1078US7892911B2Metal gate electrodes for replacement gate integration schemeAPPLIED MATERIALS INC·Filed 2008·Granted Feb 22, 2011·8 cites·7 claims
- 1174US11848369B2Horizontal gate-all-around device nanowire air gap spacer formationAPPLIED MATERIALS INC·Filed 2022·Granted Dec 19, 2023·0 cites·20 claims
- 1272US10490666B2Horizontal gate all around and FinFET device isolationAPPLIED MATERIALS INC·Filed 2017·Granted Nov 26, 2019·1 cites·17 claims
- 1370US11282936B2Horizontal gate all around device nanowire air gap spacer formationAPPLIED MATERIALS INC·Filed 2020·Granted Mar 22, 2022·0 cites·20 claims
- 1470US8999821B2Fin formation by epitaxial depositionAPPLIED MATERIALS INC·Filed 2014·Granted Apr 7, 2015·2 cites·20 claims
- 1563US8895432B2Method of fabricating a self-aligned buried bit line for a vertical channel DRAMCHANG CHORNG-PING·Filed 2013·Granted Nov 25, 2014·2 cites·12 claims
- 1646US9177815B2Methods for chemical mechanical planarization of patterned wafersAPPLIED MATERIALS INC·Filed 2013·Granted Nov 3, 2015·0 cites·14 claims
- 1742US2015118832A1Methods for patterning a hardmask layer for an ion implantation processAPPLIED MATERIALS INC·Filed 2013·Application pending·0 cites
- 1839US2014231914A1Fin field effect transistor fabricated with hollow replacement channelAPPLIED MATERIALS INC·Filed 2013·Application pending·0 cites
- 1939US2009189201A1Inward dielectric spacers for replacement gate integration schemeCHANG CHORNG-PING·Filed 2008·Application pending·0 cites
- 2037US2017194430A1Method for fabricating nanowires for horizontal gate all around devices for semiconductor applicationsAPPLIED MATERIALS INC·Filed 2016·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →