Inventor · disambiguated record
Chorng-Ping Chang
Also filed as: CHANG CHORNG-PING
9 granted patents·3 pending applications·105 citations·filing 1989–2013
87Inventor score
Files withCHANG CHORNG-PING4APPLIED MATERIALS INC3AGERE SYST GUARDIAN CORP1AGERE SYSTEMS INC1AT & T BELL LAB1
Top patents by PatentIndex Score
12 records- 0190US9023723B2Method of fabricating a gate-all-around word line for a vertical channel DRAMCHANG CHORNG-PING·Filed 2013·Granted May 5, 2015·13 cites·10 claims
- 0278US7892911B2Metal gate electrodes for replacement gate integration schemeAPPLIED MATERIALS INC·Filed 2008·Granted Feb 22, 2011·8 cites·7 claims
- 0368US6566224B1Process for device fabricationAGERE SYSTEMS INC·Filed 1997·Granted May 20, 2003·38 cites·36 claims
- 0463US8895432B2Method of fabricating a self-aligned buried bit line for a vertical channel DRAMCHANG CHORNG-PING·Filed 2013·Granted Nov 25, 2014·2 cites·12 claims
- 0560US5438006AMethod of fabricating gate stack having a reduced heightAT & T CORP·Filed 1994·Granted Aug 1, 1995·20 cites·5 claims
- 0659US8293460B2Double exposure patterning with carbonaceous hardmaskCHEN HUI W·Filed 2008·Granted Oct 23, 2012·2 cites·8 claims
- 0744US7547621B2LPCVD gate hard maskAPPLIED MATERIALS INC·Filed 2006·Granted Jun 16, 2009·0 cites·14 claims
- 0844US6469390B2Device comprising thermally stable, low dielectric constant materialAGERE SYST GUARDIAN CORP·Filed 1999·Granted Oct 22, 2002·12 cites·19 claims
- 0940US4960656ADevices and process for producing devices containing silicon nitride filmsAT & T BELL LAB·Filed 1989·Granted Oct 2, 1990·10 cites·23 claims
- 1039US2014231914A1Fin field effect transistor fabricated with hollow replacement channelAPPLIED MATERIALS INC·Filed 2013·Application pending·0 cites
- 1139US2009189201A1Inward dielectric spacers for replacement gate integration schemeCHANG CHORNG-PING·Filed 2008·Application pending·0 cites
- 1231US2004137688A1Semiconductor device with tapered gate and process for fabricating the deviceCHANG CHORNG-PING·Filed 2003·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →