Inventor · disambiguated record
Douglas H. Burns
Also filed as: BURNS DOUGLAS · BURNS DOUGLAS H
22 granted patents·7 pending applications·347 citations·filing 1989–2018
96Inventor score
Files withAPPLIED MATERIALS INC14BUCHBERGER JR DOUGLAS A6BRILLHART PAUL LUKAS5HOFFMAN DANIEL J2APPLIED MATERIAL INC1
Top patents by PatentIndex Score
29 records- 0197US7359177B2Dual bias frequency plasma reactor with feedback control of E.S.C. voltage using wafer voltage measurement at the bias supply outputAPPLIED MATERIALS INC·Filed 2005·Granted Apr 15, 2008·42 cites·16 claims
- 0296US8092639B2Plasma reactor with feed forward thermal control system using a thermal model for accommodating RF power changes or wafer temperature changesBUCHBERGER JR DOUGLAS A·Filed 2010·Granted Jan 10, 2012·20 cites·7 claims
- 0396US8012304B2Plasma reactor with a multiple zone thermal control feed forward control apparatusAPPLIED MATERIALS INC·Filed 2006·Granted Sep 6, 2011·27 cites·11 claims
- 0494US8608900B2Plasma reactor with feed forward thermal control system using a thermal model for accommodating RF power changes or wafer temperature changesBUCHBERGER JR DOUGLAS A·Filed 2006·Granted Dec 17, 2013·18 cites·20 claims
- 0593US8329586B2Method of processing a workpiece in a plasma reactor using feed forward thermal controlBUCHBERGER JR DOUGLAS A·Filed 2010·Granted Dec 11, 2012·11 cites·18 claims
- 0693US8221580B2Plasma reactor with wafer backside thermal loop, two-phase internal pedestal thermal loop and a control processor governing both loopsBUCHBERGER JR DOUGLAS A·Filed 2006·Granted Jul 17, 2012·14 cites·18 claims
- 0793US8011381B2Balanced purge slit valveAPPLIED MATERIAL INC·Filed 2008·Granted Sep 6, 2011·22 cites·22 claims
- 0892US8980044B2Plasma reactor with a multiple zone thermal control feed forward control apparatusBRILLHART PAUL LUKAS·Filed 2010·Granted Mar 17, 2015·10 cites·19 claims
- 0992US8337660B2Capacitively coupled plasma reactor having very agile wafer temperature controlBUCHBERGER JR DOUGLAS A·Filed 2010·Granted Dec 25, 2012·12 cites·13 claims
- 1092US8021521B2Method for agile workpiece temperature control in a plasma reactor using a thermal modelAPPLIED MATERIALS INC·Filed 2006·Granted Sep 20, 2011·13 cites·19 claims
- 1191US8157951B2Capacitively coupled plasma reactor having very agile wafer temperature controlBUCHBERGER JR DOUGLAS A·Filed 2006·Granted Apr 17, 2012·18 cites·16 claims
- 1291US7988872B2Method of operating a capacitively coupled plasma reactor with dual temperature control loopsAPPLIED MATERIALS INC·Filed 2006·Granted Aug 2, 2011·19 cites·20 claims
- 1390US8034180B2Method of cooling a wafer support at a uniform temperature in a capacitively coupled plasma reactorAPPLIED MATERIALS INC·Filed 2006·Granted Oct 11, 2011·14 cites·6 claims
- 1489US8092638B2Capacitively coupled plasma reactor having a cooled/heated wafer support with uniform temperature distributionBRILLHART PAUL LUKAS·Filed 2006·Granted Jan 10, 2012·15 cites·9 claims
- 1587US8546267B2Method of processing a workpiece in a plasma reactor using multiple zone feed forward thermal controlBRILLHART PAUL LUKAS·Filed 2010·Granted Oct 1, 2013·5 cites·7 claims
- 1684US7141757B2Plasma reactor with overhead RF source power electrode having a resonance that is virtually pressure independentAPPLIED MATERIALS INC·Filed 2004·Granted Nov 28, 2006·23 cites·22 claims
- 1783US7374636B2Method and apparatus for providing uniform plasma in a magnetic field enhanced plasma reactorAPPLIED MATERIALS INC·Filed 2002·Granted May 20, 2008·21 cites·16 claims
- 1882US8801893B2Method of cooling a wafer support at a uniform temperature in a capacitively coupled plasma reactorBRILLHART PAUL LUKAS·Filed 2010·Granted Aug 12, 2014·5 cites·16 claims
- 1976US8048806B2Methods to avoid unstable plasma states during a process transitionAPPLIED MATERIALS INC·Filed 2006·Granted Nov 1, 2011·5 cites·13 claims
- 2072US7375947B2Method of feedback control of ESC voltage using wafer voltage measurement at the bias supply outputAPPLIED MATERIALS INC·Filed 2007·Granted May 20, 2008·3 cites·16 claims
- 2171US7316199B2Method and apparatus for controlling the magnetic field intensity in a plasma enhanced semiconductor wafer processing chamberAPPLIED MATERIALS INC·Filed 2002·Granted Jan 8, 2008·9 cites·11 claims
- 2261US4928284ALaser power control systemLASA IND INC·Filed 1989·Granted May 22, 1990·21 cites·14 claims
- 2352US2009250335A1Method of controlling plasma distribution uniformity by superposition of different constant solenoid fieldsHOFFMAN DANIEL J·Filed 2008·Application pending·0 cites
- 2452US2009250432A1Method of controlling plasma distribution uniformity by time-weighted superposition of different solenoid fieldsHOFFMAN DANIEL J·Filed 2008·Application pending·0 cites
- 2549US2013017315A1Methods and apparatus for controlling power distribution in substrate processing systemsAPPLIED MATERIALS INC·Filed 2011·Application pending·0 cites
- 2648US2013014894A1Methods and apparatus for controlling power distribution in substrate processing systemsAPPLIED MATERIALS INC·Filed 2011·Application pending·0 cites
- 2746US2010319852A1Capacitivley coupled plasma reactor having a cooled/heated wafer support with uniform temperature distributionBRILLHART PAUL LUKAS·Filed 2010·Application pending·0 cites
- 2842US2007048882A1Method to reduce plasma-induced charging damageAPPLIED MATERIALS INC·Filed 2006·Application pending·0 cites
- 2939US2018374736A1Electrostatic carrier for die bonding applicationsAPPLIED MATERIALS INC·Filed 2018·Application pending·0 cites
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