Inventor · disambiguated record
Tomoki Uemura
Also filed as: UEMURA TOMOKI
21 granted patents·8 pending applications·144 citations·filing 1997–2017
94Inventor score
Top patents by PatentIndex Score
29 records- 0189US6320296B1Diamond wafer, method of estimating a diamond wafer and diamond surface acoustic wave deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2001·Granted Nov 20, 2001·31 cites·2 claims
- 0283US6805808B2Method for separating chips from diamond waferSUMITOMO ELECTRIC INDUSTRIES·Filed 2001·Granted Oct 19, 2004·44 cites·6 claims
- 0381US8915352B2Feeding system for reduced iron materialTSUGE OSAMU·Filed 2011·Granted Dec 23, 2014·3 cites·20 claims
- 0476US6448688B2Hard carbon film and surface-acoustic-wave substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2000·Granted Sep 10, 2002·13 cites·3 claims
- 0571US7432186B2Method of surface treating substrates and method of manufacturing III-V compound semiconductorsSUMITOMO ELECTRIC INDUSTRIES·Filed 2006·Granted Oct 7, 2008·3 cites·7 claims
- 0671US6717009B2Method for making high-purity naphthalenedicarboxylic acidKOBE STEEL LTD·Filed 2002·Granted Apr 6, 2004·5 cites·14 claims
- 0769US10571193B2Reduced iron production method and deviceKOBE STEEL LTD·Filed 2016·Granted Feb 25, 2020·1 cites·9 claims
- 0869US6210780B1Diamond wafer, method of estimating a diamond wafer and diamond surface acoustic wave deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 1998·Granted Apr 3, 2001·17 cites·10 claims
- 0967US8147612B2Method for manufacturing gallium nitride crystal and gallium nitride waferUEMURA TOMOKI·Filed 2007·Granted Apr 3, 2012·3 cites·40 claims
- 1067US6525235B2Method for manufacturing 2,6-dimethylnaphthaleneKOBE STEEL LTD·Filed 2001·Granted Feb 25, 2003·4 cites·4 claims
- 1160US8698282B2Group III nitride semiconductor crystal substrate and semiconductor deviceOKAHISA TAKUJI·Filed 2008·Granted Apr 15, 2014·0 cites·12 claims
- 1258US6356006B1Diamond wafer, method of estimating a diamond wafer and diamond surface acoustic wave deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2000·Granted Mar 12, 2002·5 cites·3 claims
- 1356US2010164070A1Group III Nitride Semiconductor Crystal Substrate and Semiconductor DeviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2010·Application pending·0 cites
- 1454US2008299375A1ALxGayIn1-x-yN substrate, cleaning method of AIxGayIn1-x-yN substrate, AIN substrate, and cleaning method of AIN substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2008·Application pending·0 cites
- 1550US8845992B2III-nitride single-crystal ingot, III-nitride single-crystal substrate, method of manufacturing III-nitride single-crystal ingot, and method of manufacturing III-nitride single-crystal substrateOKAHISA TAKUJI·Filed 2008·Granted Sep 30, 2014·0 cites·5 claims
- 1650US6661152B2Diamond substrate for surface acoustic wave device, and surface acoustic wave deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2002·Granted Dec 9, 2003·4 cites·10 claims
- 1749US11549155B2Reduced iron production method and production apparatusKOBE STEEL LTD·Filed 2017·Granted Jan 10, 2023·0 cites·7 claims
- 1849US7943964B2AlxGayIn1−x−yN crystal substrate, semiconductor device, and method of manufacturing the sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2006·Granted May 17, 2011·0 cites·8 claims
- 1949US7387989B2AlxGayInl−x−yN substrate, cleaning method of AlxGayInl−x−yN substrate, AlN substrate, and cleaning method of AlN substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2005·Granted Jun 17, 2008·0 cites·3 claims
- 2047US2009127664A1Group iii nitride semiconductor crystal growing method, group iii nitride semiconductor crystal substrate fabrication method, and group iii nitride semiconductor crystal substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2008·Application pending·0 cites
- 2147US2009127663A1Group iii nitride semiconductor crystal growing method, group iii nitride semiconductor crystal substrate fabrication method, and group iii nitride semiconductor crystal substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2008·Application pending·0 cites
- 2246US11428468B2Rotary hearth furnace, and method for producing reduced iron using rotary hearth furnaceKOBE STEEL LTD·Filed 2017·Granted Aug 30, 2022·0 cites·19 claims
- 2345US2011132410A1GaxIn1-xN Substrate and GaxIn1-xN Substrate Cleaning MethodSUMITOMO ELECTRIC INDUSTRIES·Filed 2007·Application pending·0 cites
- 2444US2012164058A1Method for manufacturing gallium nitride crystal and gallium nitride waferUEMURA TOMOKI·Filed 2012·Application pending·0 cites
- 2543US5959389ADiamond-ZnO surface acoustic wave deviceSUMITOMO ELECTRONIC IND LTD·Filed 1997·Granted Sep 28, 1999·8 cites·25 claims
- 2641US2009032907A1Method for Producing GaxIn1-xN(0<x>) Crystal Gaxin1-xn(0<x<1) Crystalline Substrate, Method for Producing GaN Crystal, GaN Crystalline Substrate, and ProductUEMURA TOMOKI·Filed 2006·Application pending·0 cites
- 2740US8294245B2GaN single-crystal mass and method of its manufacture, and semiconductor device and method of its manufactureNAKAHATA HIDEAKI·Filed 2010·Granted Oct 23, 2012·0 cites·5 claims
- 2836US6416865B1Hard carbon film and surface acoustic-wave substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 1999·Granted Jul 9, 2002·3 cites·8 claims
- 2936US2008292877A1Method of Cleaning Gaas Substrate, Method of Producing Gaas Substrate, Method of Fabricating Epitaxial Susbstrate, and Gaas WaferHORIE YUSUKE·Filed 2005·Application pending·0 cites
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