ALxGayIn1-x-yN substrate, cleaning method of AIxGayIn1-x-yN substrate, AIN substrate, and cleaning method of AIN substrate
Abstract
An Al x Ga y In 1-x-y N substrate in which particles having a grain size of at least 0.2 μm on a surface of the Al x Ga y In 1-x-y N substrate are at most 20 in number when a diameter of the Al x Ga y In 1-x-y N substrate is two inches, and a cleaning method with which the Al x Ga y In 1-x-y N substrate can be obtained are provided. Further, an Al x Ga y In 1-x-y N substrate in which, in a photoelectron spectrum of a surface of the Al x Ga y In 1-x-y N substrate by X-ray photoelectron spectroscopy with a detection angle of 10°, a ratio between a peak area of C 1s electrons and a peak area of N 1s electrons (C 1s electron peak area/N 1s electron peak area) is at most 3, and a cleaning method with which the Al x Ga y In 1-x-y N substrate can be obtained are provided. Still further, an AlN substrate in which, in a photoelectron spectrum of a surface of the AlN substrate by X-ray photoelectron spectroscopy with a detection angle of 10°, a ratio between a peak area of Al 2s electrons and a peak area of N 1s electrons (Al 2s electron peak area/N 1s electron peak area) is at most 0.65 and a cleaning method with which the AlN substrate can be obtained are provided.
Claims
exact text as granted — not AI-modified1 . An Al x Ga y In 1-x-y N substrate, wherein
particles having a grain size of at least 0.2 μm on a surface of said Al x Ga y In 1-x-y N substrate are at most 20 in number when a diameter of said Al x Ga y In 1-x-y N substrate is two inches.
2 - 5 . (canceled)
6 . An Al x Ga y In 1-x-y N substrate, wherein
in a photoelectron spectrum of a surface of said Al x Ga y In 1-x-y N substrate by X-ray photoelectron spectroscopy with a detection angle of 10°, a ratio between a peak area of C 1s electrons and a peak area of N 1s electrons (C 1s electron peak area/N 1s electron peak area) is at most 3.
7 - 10 . (canceled)
11 . An AlN substrate, wherein
in a photoelectron spectrum of a surface of said AlN substrate by X-ray photoelectron spectroscopy with a detection angle of 10°, a ratio between a peak area of Al 2s electrons and a peak area of N 1s electrons (Al 2s electron peak area/N 1s electron peak area) is at most 0.65.
12 - 15 . (canceled)Join the waitlist — get patent alerts
Track US2008299375A1 — get alerts on status changes and closely related new filings.
We store only your email — no account needed. See our privacy policy.