US2008299375A1PendingUtilityA1

ALxGayIn1-x-yN substrate, cleaning method of AIxGayIn1-x-yN substrate, AIN substrate, and cleaning method of AIN substrate

Assignee: SUMITOMO ELECTRIC INDUSTRIESPriority: Jul 1, 2004Filed: May 8, 2008Published: Dec 4, 2008
Est. expiryJul 1, 2024(expired)· nominal 20-yr term from priority
H10P 52/00C30B 33/00Y10T428/21
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Claims

Abstract

An Al x Ga y In 1-x-y N substrate in which particles having a grain size of at least 0.2 μm on a surface of the Al x Ga y In 1-x-y N substrate are at most 20 in number when a diameter of the Al x Ga y In 1-x-y N substrate is two inches, and a cleaning method with which the Al x Ga y In 1-x-y N substrate can be obtained are provided. Further, an Al x Ga y In 1-x-y N substrate in which, in a photoelectron spectrum of a surface of the Al x Ga y In 1-x-y N substrate by X-ray photoelectron spectroscopy with a detection angle of 10°, a ratio between a peak area of C 1s electrons and a peak area of N 1s electrons (C 1s electron peak area/N 1s electron peak area) is at most 3, and a cleaning method with which the Al x Ga y In 1-x-y N substrate can be obtained are provided. Still further, an AlN substrate in which, in a photoelectron spectrum of a surface of the AlN substrate by X-ray photoelectron spectroscopy with a detection angle of 10°, a ratio between a peak area of Al 2s electrons and a peak area of N 1s electrons (Al 2s electron peak area/N 1s electron peak area) is at most 0.65 and a cleaning method with which the AlN substrate can be obtained are provided.

Claims

exact text as granted — not AI-modified
1 . An Al x Ga y In 1-x-y N substrate, wherein
 particles having a grain size of at least 0.2 μm on a surface of said Al x Ga y In 1-x-y N substrate are at most 20 in number when a diameter of said Al x Ga y In 1-x-y N substrate is two inches.   
   
   
       2 - 5 . (canceled) 
   
   
       6 . An Al x Ga y In 1-x-y N substrate, wherein
 in a photoelectron spectrum of a surface of said Al x Ga y In 1-x-y N substrate by X-ray photoelectron spectroscopy with a detection angle of 10°, a ratio between a peak area of C 1s  electrons and a peak area of N 1s  electrons (C 1s  electron peak area/N 1s  electron peak area) is at most 3.   
   
   
       7 - 10 . (canceled) 
   
   
       11 . An AlN substrate, wherein
 in a photoelectron spectrum of a surface of said AlN substrate by X-ray photoelectron spectroscopy with a detection angle of 10°, a ratio between a peak area of Al 2s  electrons and a peak area of N 1s  electrons (Al 2s  electron peak area/N 1s  electron peak area) is at most 0.65.   
   
   
       12 - 15 . (canceled)

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