US2010164070A1PendingUtilityA1
Group III Nitride Semiconductor Crystal Substrate and Semiconductor Device
Assignee: SUMITOMO ELECTRIC INDUSTRIESPriority: Nov 20, 2007Filed: Mar 8, 2010Published: Jul 1, 2010
Est. expiryNov 20, 2027(~1.3 yrs left)· nominal 20-yr term from priority
C30B 25/02H10D 62/8503C30B 29/403
56
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Abstract
A group III nitride semiconductor crystal substrate has a diameter of at least 25 mm and not more than 160 mm. The resistivity of the group III nitride semiconductor crystal substrate is at least 1×10 −4 Ω·cm and not more than 0.1 Ω·cm. The resistivity distribution in the diameter direction of the group III nitride semiconductor crystal is at least −30% and not more than 30%. The resistivity distribution in the thickness direction of the group III nitride semiconductor crystal is at least −16% and not more than 16%.
Claims
exact text as granted — not AI-modified1 - 13 . (canceled)
14 . A group III nitride semiconductor crystal substrate having a diameter of at least 25 mm and not more than 160 mm and a thickness of at least 100 μm, wherein
a resistivity is at least 1×10 −4 Ω·cm and not more than 0.15 Ω·m, a resistivity distribution in a diameter direction is at least −30% and not more than 30%, and a resistivity distribution in a thickness direction is at least −16% and not more than 16%.Join the waitlist — get patent alerts
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