Inventor · disambiguated record
Rongsheng Yang
Also filed as: YANG RONGSHENG
27 granted patents·3 pending applications·598 citations·filing 1997–2015
97Inventor score
Top patents by PatentIndex Score
30 records- 0196US9054007B2Image sensor pixel cell with switched deep trench isolation structureOMNIVISION TECH INC·Filed 2013·Granted Jun 9, 2015·25 cites·31 claims
- 0296US6503805B2Channel implant through gate polysiliconMICRON TECHNOLOGY INC·Filed 2000·Granted Jan 7, 2003·125 cites·18 claims
- 0395US7638392B2Methods of forming capacitor structuresMICRON TECHNOLOGY INC·Filed 2006·Granted Dec 29, 2009·23 cites·25 claims
- 0493US9496304B2Image sensor pixel cell with switched deep trench isolation structureOMNIVISION TECH INC·Filed 2015·Granted Nov 15, 2016·10 cites·32 claims
- 0593US8330195B2Multilayer image sensor pixel structure for reducing crosstalkVENEZIA VINCENT·Filed 2010·Granted Dec 11, 2012·9 cites·11 claims
- 0693US6011307AAnisotropic conductive interconnect material for electronic devices, method of use and resulting productMICRON TECHNOLOGY INC·Filed 1997·Granted Jan 4, 2000·155 cites·38 claims
- 0791US6093661AIntegrated circuitry and semiconductor processing method of forming field effect transistorsMICRON TECHNOLOGY INC·Filed 1999·Granted Jul 25, 2000·74 cites·1 claims
- 0889US7875918B2Multilayer image sensor pixel structure for reducing crosstalkOMNIVISION TECH INC·Filed 2009·Granted Jan 25, 2011·10 cites·18 claims
- 0988US8253178B1CMOS image sensor with peripheral trench capacitorYANG RONGSHENG·Filed 2011·Granted Aug 28, 2012·9 cites·8 claims
- 1086US7442600B2Methods of forming threshold voltage implant regionsMICRON TECHNOLOGY INC·Filed 2004·Granted Oct 28, 2008·23 cites·11 claims
- 1186US6541395B1Semiconductor processing method of forming field effect transistorsMICRON TECHNOLOGY INC·Filed 2000·Granted Apr 1, 2003·31 cites·12 claims
- 1284US8946795B2Backside-illuminated (BSI) image sensor with reduced blooming and electrical shutterCHEN GANG·Filed 2011·Granted Feb 3, 2015·3 cites·6 claims
- 1375US6744102B2MOS transistors with nitrogen in the gate oxide of the p-channel transistorMICRON TECHNOLOGY INC·Filed 2002·Granted Jun 1, 2004·14 cites·20 claims
- 1473US6781212B1Selectively doped trench device isolationMICRON TECHNOLOGY INC·Filed 1998·Granted Aug 24, 2004·33 cites·34 claims
- 1571US6417546B2P-type FET in a CMOS with nitrogen atoms in the gate dielectricMICRON TECHNOLOGY INC·Filed 1999·Granted Jul 9, 2002·21 cites·7 claims
- 1657US7157324B2Transistor structure having reduced transistor leakage attributesMICRON TECHNOLOGY INC·Filed 2004·Granted Jan 2, 2007·6 cites·23 claims
- 1754US7767514B2Methods of implanting dopant into channel regionsMICRON TECHNOLOGY INC·Filed 2006·Granted Aug 3, 2010·0 cites·19 claims
- 1854US7674670B2Methods of forming threshold voltage implant regionsMICRON TECHNOLOGY INC·Filed 2006·Granted Mar 9, 2010·0 cites·18 claims
- 1953US2012280109A1Method, apparatus and system to provide conductivity for a substrate of an image sensing pixelMAO DULI·Filed 2011·Application pending·0 cites
- 2052US8273619B2Methods of implanting dopant into channel regionsWANG HONGMEI·Filed 2010·Granted Sep 25, 2012·0 cites·20 claims
- 2151US7259442B2Selectively doped trench device isolationMICRON TECHNOLOGY INC·Filed 2004·Granted Aug 21, 2007·3 cites·9 claims
- 2249US6162693AChannel implant through gate polysiliconMICRON TECHNOLOGY INC·Filed 1999·Granted Dec 19, 2000·12 cites·17 claims
- 2349US2006220109A1Selectively doped trench device isolationKAO DAVID Y·Filed 2006·Application pending·0 cites
- 2447US7105899B2Transistor structure having reduced transistor leakage attributesMICRON TECHNOLOGY INC·Filed 2002·Granted Sep 12, 2006·2 cites·47 claims
- 2544US6630706B2Localized array threshold voltage implant to enhance charge storage within DRAM memory cellsMICRON TECHNOLOGY INC·Filed 2001·Granted Oct 7, 2003·4 cites·13 claims
- 2639US2012319242A1Dopant Implantation Hardmask for Forming Doped Isolation Regions in Image SensorsMAO DULI·Filed 2011·Application pending·0 cites
- 2736US6215151B1Methods of forming integrated circuitry and integrated circuitryMICRON TECHNOLOGY INC·Filed 1999·Granted Apr 10, 2001·3 cites·29 claims
- 2835US5946564AMethods of forming integrated circuitry and integrated circuitryMICRON TECHNOLOGY INC·Filed 1997·Granted Aug 31, 1999·3 cites·39 claims
- 2933US6815287B2Localized array threshold voltage implant to enhance charge storage within DRAM memory cellsMICRON TECHNOLOGY INC·Filed 2003·Granted Nov 9, 2004·0 cites·17 claims
- 3033US6800520B1Localized array threshold voltage implant enhance charge storage within DRAM memory cellsMICRON TECHNOLOGY INC·Filed 2002·Granted Oct 5, 2004·0 cites·9 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →