Inventor · disambiguated record
Gabriella Ghidini
Also filed as: GHIDINI GABRIELLA
11 granted patents·3 pending applications·278 citations·filing 1987–2020
91Inventor score
Top patents by PatentIndex Score
14 records- 0189US5856221AProcess for forming an integrated circuit comprising non-volatile memory cells and side transistors of at least two different types, and corresponding ICSGS THOMSON MICROELECTRONICS·Filed 1996·Granted Jan 5, 1999·59 cites·17 claims
- 0284US6004847AProcess for forming an integrated circuit comprising non-volatile memory cells and side transistors and corresponding ICSGS THOMSON MICROELECTRONICS·Filed 1996·Granted Dec 21, 1999·44 cites·14 claims
- 0381US5422291AMethod of making an EPROM cell with a readily scalable interpoly dielectricST MICROELECTRONICS SRL·Filed 1993·Granted Jun 6, 1995·45 cites·19 claims
- 0474US6114203AMethod of manufacturing a MOS integrated circuit having components with different dielectricsST MICROELECTRONICS SRL·Filed 1996·Granted Sep 5, 2000·47 cites·12 claims
- 0571US6248630B1Process for forming an integrated circuit comprising non-volatile memory cells and side transistors and corresponding ICSGS THOMSON MICROELECTRONICS·Filed 1999·Granted Jun 19, 2001·24 cites·6 claims
- 0670US5600166AEPROM cell with a readily scalable interpoly dielectricST MICROELECTRONICS SRL·Filed 1995·Granted Feb 4, 1997·28 cites·12 claims
- 0770US4808261AFabrication process for EPROM cells with oxide-nitride-oxide dielectricSGS MICROELETTRONICA SPA·Filed 1987·Granted Feb 28, 1989·27 cites·4 claims
- 0864US11302471B2Integrated transformerST MICROELECTRONICS SRL·Filed 2020·Granted Apr 12, 2022·0 cites·8 claims
- 0957US10541079B2Integrated transformerST MICROELECTRONICS SRL·Filed 2019·Granted Jan 21, 2020·0 cites·17 claims
- 1050US10236115B2Integrated transformerST MICROELECTRONICS SRL·Filed 2015·Granted Mar 19, 2019·0 cites·9 claims
- 1150US6448138B1Nonvolatile floating-gate memory devices, and process of fabricationST MICROELECTRONICS SRL·Filed 2000·Granted Sep 10, 2002·4 cites·20 claims
- 1236US2003015753A1Process for forming an integrated circuit comprising non-volatile memory cells and side transistors of at least two different types, and corresponding ICFiled 2002·Application pending·0 cites
- 1335US2002158285A1Nonvolatile floating-gate memory devices, and process of fabricationST MICROELECTRONICS SRL·Filed 2002·Application pending·0 cites
- 1430US2002000636A1Process for forming an integrated circuit comprising non-volatile memory cells and side transistors of at least two different types, and corresponding icFiled 1998·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →