Inventor · disambiguated record
Olivier Joubert
Also filed as: JOUBERT OLIVIER · JOUBERT OLIVIER P
30 granted patents·9 pending applications·309 citations·filing 1998–2023
96Inventor score
Files withAPPLIED MATERIALS INC19COMMISSARIAT ENERGIE ATOMIQUE7FRANCE TELECOM3CENTRE NAT RECH SCIENT2ELECTRICITE DE FRANCE2
Top patents by PatentIndex Score
39 records- 0199US10312048B2Creating ion energy distribution functions (IEDF)APPLIED MATERIALS INC·Filed 2017·Granted Jun 4, 2019·48 cites·19 claims
- 0298US11728124B2Creating ion energy distribution functions (IEDF)APPLIED MATERIALS INC·Filed 2021·Granted Aug 15, 2023·5 cites·13 claims
- 0398US11069504B2Creating ion energy distribution functions (IEDF)APPLIED MATERIALS INC·Filed 2020·Granted Jul 20, 2021·7 cites·21 claims
- 0498US10685807B2Creating ion energy distribution functions (IEDF)APPLIED MATERIALS INC·Filed 2019·Granted Jun 16, 2020·38 cites·16 claims
- 0595USD797691SComposite edge ringAPPLIED MATERIALS INC·Filed 2016·Granted Sep 19, 2017·59 cites·1 claims
- 0695US9725302B1Wafer processing equipment having exposable sensing layersAPPLIED MATERIALS INC·Filed 2016·Granted Aug 8, 2017·18 cites·20 claims
- 0793US9975758B2Wafer processing equipment having exposable sensing layersAPPLIED MATERIALS INC·Filed 2017·Granted May 22, 2018·8 cites·20 claims
- 0892US9570317B2Microelectronic method for etching a layerCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2013·Granted Feb 14, 2017·14 cites·28 claims
- 0989US9257293B2Methods of forming silicon nitride spacersAPPLIED MATERIALS INC·Filed 2014·Granted Feb 9, 2016·10 cites·20 claims
- 1087US10056266B2Method for manufacturing a resistive device for a memory or logic circuitCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2015·Granted Aug 21, 2018·5 cites·20 claims
- 1186US9583339B2Method for forming spacers for a transistor gateCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2016·Granted Feb 28, 2017·4 cites·28 claims
- 1286US9378970B2Plasma etching processCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2015·Granted Jun 28, 2016·9 cites·32 claims
- 1382US10062602B2Method of etching a porous dielectric materialCOMMISSARIAT A LENERGIE ATOMIQUE ET AUX ENE ALT·Filed 2013·Granted Aug 28, 2018·5 cites·28 claims
- 1478US9059400B2Magnetic random access memory cells with isolating linersCROCUS TECHNOLOGY INC·Filed 2014·Granted Jun 16, 2015·3 cites·7 claims
- 1571US9818621B2Cyclic oxide spacer etch processAPPLIED MATERIALS INC·Filed 2017·Granted Nov 14, 2017·2 cites·20 claims
- 1670US8956886B2Embedded test structure for trimming process controlAPPLIED MATERIALS INC·Filed 2014·Granted Feb 17, 2015·2 cites·20 claims
- 1768US6326302B1Process for the anisotropic etching of an organic dielectric polymer material by a plasma gas and application in microelectronicsFRANCE TELECOM·Filed 2000·Granted Dec 4, 2001·15 cites·20 claims
- 1867US6589715B2Process for depositing and developing a plasma polymerized organosilicon photoresist filmFRANCE TELECOM·Filed 2001·Granted Jul 8, 2003·10 cites·17 claims
- 1963US8546263B2Method of patterning of magnetic tunnel junctionsJOUBERT OLIVIER·Filed 2011·Granted Oct 1, 2013·3 cites·16 claims
- 2062US9601794B2Electrochemical device comprising a proton-conducting ceramic electrolyteELECTRICITE DE FRANCE·Filed 2014·Granted Mar 21, 2017·0 cites·11 claims
- 2158US6271144B1Process for etching a polycrystalline Si(1-x)Ge(x) layer or a stack of polycrystalline Si(1-x)Ge(x) layer and of a polycrystalline Si layer, and its application to microelectronicsFRANCE TELECOM·Filed 1998·Granted Aug 7, 2001·24 cites·26 claims
- 2256US7723610B2Titanium oxide-based sol-gel polymerCENTRE NAT RECH SCIENT·Filed 2009·Granted May 25, 2010·0 cites·5 claims
- 2356US2023352264A1Creating Ion Energy Distribution Functions (IEDF)DORF LEONID·Filed 2023·Application pending·0 cites
- 2454US10109464B2Minimization of ring erosion during plasma processesAPPLIED MATERIALS INC·Filed 2016·Granted Oct 23, 2018·0 cites·19 claims
- 2554US2019043697A1Minimization of ring erosion during plasma processesAPPLIED MATERIALS INC·Filed 2018·Application pending·0 cites
- 2653US12237149B2Reducing aspect ratio dependent etch with direct current bias pulsingAPPLIED MATERIALS INC·Filed 2022·Granted Feb 25, 2025·0 cites·19 claims
- 2753US6818488B2Process for making a gate for a short channel CMOS transistor structureCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2001·Granted Nov 16, 2004·9 cites·14 claims
- 2853US2010015495A1Electrochemical Device Comprising a Proton-Conducting Ceramic ElectrolyteELECTRICITE DE FRANCE·Filed 2007·Application pending·0 cites
- 2952US2025054770A1Methods of etching oxygen-containing features at low temperaturesAPPLIED MATERIALS INC·Filed 2023·Application pending·0 cites
- 3052US2025054768A1Methods of etching carbon-containing features at low temperaturesAPPLIED MATERIALS INC·Filed 2023·Application pending·0 cites
- 3151US2024096641A1In-situ carbon liner for high aspect ratio featuresAPPLIED MATERIALS INC·Filed 2022·Application pending·0 cites
- 3251US2014187046A1Method for forming spacers for a transitor gateCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2013·Application pending·0 cites
- 3347US6238844B1Process for depositing a plasma polymerized organosilicon photoresist filmAPPLIED MATERIALS INC·Filed 1999·Granted May 29, 2001·11 cites·17 claims
- 3446US9048011B2Method of obtaining patters in an antireflective layerCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2013·Granted Jun 2, 2015·0 cites·15 claims
- 3543US2014335695A1External uv light sources to minimize asymmetric resist pattern trimming rate for three dimensional semiconductor chip manufactureAPPLIED MATERIALS INC·Filed 2013·Application pending·0 cites
- 3642US11208354B2Sintered zirconia mullite refractory composite, methods for its production and use thereofIMERTECH SAS·Filed 2016·Granted Dec 28, 2021·0 cites·13 claims
- 3740US11049760B2Universal process kitAPPLIED MATERIALS INC·Filed 2017·Granted Jun 29, 2021·0 cites·20 claims
- 3837US7524482B2Titanium oxide-based sol-gel polymerCENTRE NAT RECH SCIENT·Filed 2003·Granted Apr 28, 2009·0 cites·10 claims
- 3936US2010098362A1Instrumented Roller Bearing DeviceCHAUSSAT SYLVAIN·Filed 2007·Application pending·0 cites
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →