Inventor · disambiguated record
Scott Allen
Also filed as: ALLEN SCOTT · ALLEN SCOTT T · ALLEN SCOTT THOMAS
32 granted patents·3 pending applications·1,761 citations·filing 1994–2023
98Inventor score
Top patents by PatentIndex Score
35 records- 0199US7211833B2Light emitting diodes including barrier layers/sublayersCREE INC·Filed 2005·Granted May 1, 2007·152 cites·24 claims
- 0299US6316793B1Nitride based transistors on semi-insulating silicon carbide substratesCREE INC·Filed 1998·Granted Nov 13, 2001·566 cites·15 claims
- 0398US6583454B2Nitride based transistors on semi-insulating silicon carbide substratesCREE INC·Filed 2001·Granted Jun 24, 2003·171 cites·4 claims
- 0497US7960756B2Transistors including supported gate electrodesCREE INC·Filed 2009·Granted Jun 14, 2011·75 cites·17 claims
- 0597US7592211B2Methods of fabricating transistors including supported gate electrodesCREE INC·Filed 2006·Granted Sep 22, 2009·127 cites·13 claims
- 0697US6486502B1Nitride based transistors on semi-insulating silicon carbide substratesCREE INC·Filed 1999·Granted Nov 26, 2002·160 cites·18 claims
- 0796US7611915B2Methods of manufacturing light emitting diodes including barrier layers/sublayersCREE INC·Filed 2007·Granted Nov 3, 2009·31 cites·13 claims
- 0896US6686616B1Silicon carbide metal-semiconductor field effect transistorsCREE INC·Filed 2000·Granted Feb 3, 2004·155 cites·122 claims
- 0995US8680587B2Schottky diodeHENNING JASON PATRICK·Filed 2011·Granted Mar 25, 2014·22 cites·38 claims
- 1094US5686737ASelf-aligned field-effect transistor for high frequency applicationsCREE RESEARCH INC·Filed 1994·Granted Nov 11, 1997·124 cites·16 claims
- 1193US7525122B2Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitridesCREE INC·Filed 2005·Granted Apr 28, 2009·22 cites·39 claims
- 1291US9673283B2Power module for supporting high current densitiesHENNING JASON PATRICK·Filed 2012·Granted Jun 6, 2017·9 cites·39 claims
- 1389US9998109B1Power module with improved reliabilityCREE INC·Filed 2017·Granted Jun 12, 2018·7 cites·25 claims
- 1488US8664665B2Schottky diode employing recesses for elements of junction barrier arrayHENNING JASON PATRICK·Filed 2011·Granted Mar 4, 2014·10 cites·29 claims
- 1588US7858460B2Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitridesCREE INC·Filed 2009·Granted Dec 28, 2010·10 cites·25 claims
- 1687US9142636B2Methods of fabricating nitride-based transistors with an ETCH stop layerCREE INC·Filed 2013·Granted Sep 22, 2015·9 cites·7 claims
- 1786US7348612B2Metal-semiconductor field effect transistors (MESFETs) having drains coupled to the substrate and methods of fabricating the sameCREE INC·Filed 2004·Granted Mar 25, 2008·40 cites·66 claims
- 1883US7135747B2Semiconductor devices having thermal spacersCREE INC·Filed 2004·Granted Nov 14, 2006·32 cites·29 claims
- 1980US7067361B2Methods of fabricating silicon carbide metal-semiconductor field effect transistorsCREE INC·Filed 2003·Granted Jun 27, 2006·26 cites·57 claims
- 2078US9865750B2Schottky diodeCREE INC·Filed 2015·Granted Jan 9, 2018·2 cites·24 claims
- 2175US8269241B2Light emitting diodes including barrier layers/sublayers and manufacturing methods thereforSLATER JR DAVID B·Filed 2009·Granted Sep 18, 2012·3 cites·39 claims
- 2273US9231122B2Schottky diodeCREE INC·Filed 2014·Granted Jan 5, 2016·2 cites·21 claims
- 2371US8618582B2Edge termination structure employing recesses for edge termination elementsHENNING JASON PATRICK·Filed 2011·Granted Dec 31, 2013·3 cites·35 claims
- 2469US10847647B2Power semiconductor devices having top-side metallization structures that include buried grain stop layersCREE INC·Filed 2019·Granted Nov 24, 2020·1 cites·28 claims
- 2569US10707858B2Power module with improved reliabilityCREE INC·Filed 2018·Granted Jul 7, 2020·1 cites·21 claims
- 2665US8907366B2Light emitting diodes including current spreading layer and barrier sublayersCREE INC·Filed 2013·Granted Dec 9, 2014·0 cites·28 claims
- 2762US11024731B2Power module for supporting high current densitiesCREE INC·Filed 2018·Granted Jun 1, 2021·0 cites·22 claims
- 2861US8604502B2Light emitting diodes including barrier sublayersSLATER JR DAVID B·Filed 2012·Granted Dec 10, 2013·0 cites·27 claims
- 2959US10153364B2Power module having a switch module for supporting high current densitiesCREE INC·Filed 2017·Granted Dec 11, 2018·0 cites·22 claims
- 3056US2024213196A1Power Semiconductor Devices Including Multiple Layer MetallizationWOLFSPEED INC·Filed 2023·Application pending·0 cites
- 3154US9466674B2Semiconductor devices with non-implanted barrier regions and methods of fabricating sameALLEN SCOTT THOMAS·Filed 2012·Granted Oct 11, 2016·1 cites·25 claims
- 3245US10510905B2Power Schottky diodes having closely-spaced deep blocking junctions in a heavily-doped drift regionCREE INC·Filed 2017·Granted Dec 17, 2019·0 cites·17 claims
- 3342US10269955B2Vertical FET structureCREE INC·Filed 2017·Granted Apr 23, 2019·0 cites·29 claims
- 3442US2007018199A1Nitride-based transistors and fabrication methods with an etch stop layerCREE INC·Filed 2005·Application pending·0 cites
- 3535US2003201459A1Nitride based transistors on semi-insulating silicon carbide substratesFiled 2003·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Scott Allen files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →