Inventor · disambiguated record
Yun Wang
Also filed as: WANG YUN · WANG YUN-SHIH
119 granted patents·30 pending applications·896 citations·filing 2004–2025
99Inventor score
Top patents by PatentIndex Score
149 records- 0197US9142764B1Methods of forming embedded resistors for resistive random access memory cellsINTERMOLECULAR INC·Filed 2014·Granted Sep 22, 2015·348 cites·20 claims
- 0297US8686389B1Diffusion barrier layer for resistive random access memory cellsINTERMOLECULAR INC·Filed 2012·Granted Apr 1, 2014·33 cites·18 claims
- 0396US8072795B1Biploar resistive-switching memory with a single diode per memory cellWANG YUN·Filed 2009·Granted Dec 6, 2011·39 cites·13 claims
- 0495US9018037B1Vertical oxide-oxide interface for forming-free, low power and low variability RRAM devicesINTERMOLECULAR INC·Filed 2013·Granted Apr 28, 2015·14 cites·12 claims
- 0595US8866121B2Current-limiting layer and a current-reducing layer in a memory deviceWANG YUN·Filed 2012·Granted Oct 21, 2014·14 cites·17 claims
- 0695US8569104B2Transition metal oxide bilayersPHAM HIEU·Filed 2012·Granted Oct 29, 2013·27 cites·18 claims
- 0795US8288297B1Atomic layer deposition of metal oxide materials for memory applicationsWANG YUN·Filed 2011·Granted Oct 16, 2012·23 cites·20 claims
- 0894US9246087B1Electron barrier height controlled interfaces of resistive switching layers in resistive random access memory cellsINTERMOLECULAR INC·Filed 2014·Granted Jan 26, 2016·15 cites·18 claims
- 0994US9246091B1ReRAM cells with diffusion-resistant metal silicon oxide layersINTERMOLECULAR INC·Filed 2014·Granted Jan 26, 2016·14 cites·11 claims
- 1094US9178000B1Resistive random access memory cells having shared electrodes with transistor devicesINTERMOLECULAR INC·Filed 2014·Granted Nov 3, 2015·22 cites·18 claims
- 1193US9246085B1Shaping ReRAM conductive filaments by controlling grain-boundary densityINTERMOLECULAR INC·Filed 2014·Granted Jan 26, 2016·14 cites·9 claims
- 1293US9224951B1Current-limiting electrodesINTERMOLECULAR INC·Filed 2014·Granted Dec 29, 2015·11 cites·20 claims
- 1393US8432177B2High throughput current-voltage combinatorial characterization tool and method for combinatorial solar test substratesWANG YUN·Filed 2010·Granted Apr 30, 2013·10 cites·20 claims
- 1492US9324767B1Superconducting junctionsINTERMOLECULAR INC·Filed 2013·Granted Apr 26, 2016·29 cites·20 claims
- 1592US8969844B1Embedded resistors for resistive random access memory cellsINTERMOLECULAR INC·Filed 2013·Granted Mar 3, 2015·11 cites·20 claims
- 1692US8735217B2Multifunctional electrodeINTERMOLECULAR INC·Filed 2013·Granted May 27, 2014·4 cites·20 claims
- 1790US9362497B2Reduction of forming voltage in semiconductor devicesINTERMOLECULAR INC·Filed 2015·Granted Jun 7, 2016·6 cites·18 claims
- 1890US9246094B2Stacked bi-layer as the low power switchable RRAMINTERMOLECULAR INC·Filed 2013·Granted Jan 26, 2016·8 cites·19 claims
- 1990US8817524B2Resistive random access memory cells having metal alloy current limiting layersINTERMOLECULAR INC·Filed 2012·Granted Aug 26, 2014·11 cites·20 claims
- 2090US8681530B2Nonvolatile memory device having a current limiting elementWANG YUN·Filed 2012·Granted Mar 25, 2014·11 cites·21 claims
- 2189US8890109B2Resistive random access memory access cells having thermally isolating structuresINTERMOLECULAR INC·Filed 2012·Granted Nov 18, 2014·7 cites·20 claims
- 2289US8698119B2Nonvolatile memory device using a tunnel oxide as a current limiter elementTENDULKAR MIHIR·Filed 2012·Granted Apr 15, 2014·12 cites·17 claims
- 2389US8551809B2Reduction of forming voltage in semiconductor devicesKUMAR PRAGATI·Filed 2009·Granted Oct 8, 2013·16 cites·18 claims
- 2487US8787066B2Method for forming resistive switching memory elements with improved switching behaviorWANG YUN·Filed 2011·Granted Jul 22, 2014·8 cites·20 claims
- 2587US8686386B2Nonvolatile memory device using a varistor as a current limiter elementTENDULKAR MIHIR·Filed 2012·Granted Apr 1, 2014·8 cites·19 claims
- 2686US8654560B2Variable resistance memory with a select deviceDEWEERD WIM·Filed 2011·Granted Feb 18, 2014·8 cites·13 claims
- 2785US8913418B2Confined defect profiling within resistive random memory access cellsINTERMOLECULAR INC·Filed 2013·Granted Dec 16, 2014·8 cites·18 claims
- 2885US8852996B2Carbon doped resistive switching layersINTERMOLECULAR INC·Filed 2012·Granted Oct 7, 2014·7 cites·18 claims
- 2985US8809159B2Radiation enhanced resistive switching layersINTERMOLECULAR INC·Filed 2012·Granted Aug 19, 2014·8 cites·19 claims
- 3085US8618525B2Work function tailoring for nonvolatile memory applicationsWANG YUN·Filed 2011·Granted Dec 31, 2013·6 cites·11 claims
- 3185US8466446B2Atomic layer deposition of metal oxide materials for memory applicationsWANG YUN·Filed 2012·Granted Jun 18, 2013·5 cites·20 claims
- 3285US7704946B2Reversible inhibition of pyramidal gap junction activityCARITAS ST ELIZABETHS BOSTON·Filed 2007·Granted Apr 27, 2010·4 cites·10 claims
- 3384US9224950B2Methods, systems, and apparatus for improving thin film resistor reliabilityINTERMOLECULAR INC·Filed 2013·Granted Dec 29, 2015·5 cites·16 claims
- 3484US9129894B2Embedded nonvolatile memory elements having resistive switching characteristicsHASHIM IMRAN·Filed 2012·Granted Sep 8, 2015·8 cites·20 claims
- 3584US8906736B1Multifunctional electrodeINTERMOLECULAR INC·Filed 2014·Granted Dec 9, 2014·1 cites·20 claims
- 3683US9103871B2High throughput quantum efficiency combinatorial characterization tool and method for combinatorial solar test substratesINTERMOLECULAR INC·Filed 2013·Granted Aug 11, 2015·3 cites·10 claims
- 3783US8853099B2Nonvolatile resistive memory element with a metal nitride containing switching layerWANG YUN·Filed 2011·Granted Oct 7, 2014·5 cites·6 claims
- 3883US8531868B2Bipolar resistive-switching memory with a single diode per memory cellINTERMOLECULAR INC·Filed 2012·Granted Sep 10, 2013·5 cites·20 claims
- 3982US9054307B2Resistive random access memory cells having metal alloy current limiting layersINTERMOLECULAR INC·Filed 2014·Granted Jun 9, 2015·6 cites·20 claims
- 4082US9029192B1Metal organic chemical vapor deposition of resistive switching layers for ReRAM cellsINTERMOLECULAR INC·Filed 2013·Granted May 12, 2015·4 cites·19 claims
- 4181US8866118B2Morphology control of ultra-thin MeOx layerINTERMOLECULAR INC·Filed 2012·Granted Oct 21, 2014·4 cites·16 claims
- 4280US8985172B2Liquid crystal sealant forming device and display panel assembly apparatus using the sameWANG YUN·Filed 2011·Granted Mar 24, 2015·3 cites·9 claims
- 4380US8895949B2Nonvolatile memory device using a varistor as a current limiter elementSANDISK 3D LLC·Filed 2014·Granted Nov 25, 2014·3 cites·18 claims
- 4480US8779407B2Multifunctional electrodePHAM HIEU·Filed 2012·Granted Jul 15, 2014·1 cites·19 claims
- 4580US8726836B2Liquid crystal coating apparatus and liquid crystal coating methodWANG YUN·Filed 2010·Granted May 20, 2014·3 cites·6 claims
- 4678US9184379B1Capping thin-film resistors to control interface oxidationINTERMOLECULAR INC·Filed 2014·Granted Nov 10, 2015·5 cites·14 claims
- 4778US9006023B2Diffusion barrier layer for resistive random access memory cellsINTERMOLECULAR INC·Filed 2014·Granted Apr 14, 2015·2 cites·16 claims
- 4878US8995172B2Nonvolatile memory device having a current limiting elementINTERMOLECULAR INC·Filed 2014·Granted Mar 31, 2015·4 cites·20 claims
- 4978US8440990B2Nonvolatile memory device having an electrode interface coupling regionWANG YUN·Filed 2011·Granted May 14, 2013·3 cites·13 claims
- 5077US8963117B2Reduction of forming voltage in semiconductor devicesINTERMOLECULAR INC·Filed 2013·Granted Feb 24, 2015·4 cites·17 claims
Showing the top 50 of 149 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →