Inventor · disambiguated record
Yoshihisa Fujisaki
Also filed as: FUJISAKI YOSHIHISA
35 granted patents·6 pending applications·809 citations·filing 1984–2014
98Inventor score
Top patents by PatentIndex Score
41 records- 0199US7864568B2Semiconductor storage deviceRENESAS ELECTRONICS CORP·Filed 2006·Granted Jan 4, 2011·222 cites·13 claims
- 0292US7859896B2Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2006·Granted Dec 28, 2010·18 cites·8 claims
- 0392US5416331ASurface atom fabrication method and apparatusHITACHI LTD·Filed 1992·Granted May 16, 1995·69 cites·36 claims
- 0488US6432767B2Method of fabricating semiconductor deviceHITACHI LTD·Filed 2001·Granted Aug 13, 2002·45 cites·15 claims
- 0588US6342712B1Semiconductor storage device with ferrielectric capacitor and metal-oxide isolationHITACHI LTD·Filed 1998·Granted Jan 29, 2002·57 cites·7 claims
- 0685US6097051ASemiconductor device and method of fabricatingHITACHI LTD·Filed 1996·Granted Aug 1, 2000·53 cites·18 claims
- 0783US8000126B2Semiconductor device with recording layer containing indium, germanium, antimony and telluriumRENESAS ELECTRONICS CORP·Filed 2007·Granted Aug 16, 2011·12 cites·19 claims
- 0882US4665528ADistributed-feedback semiconductor laser deviceHITACHI LTD·Filed 1984·Granted May 12, 1987·25 cites·9 claims
- 0980US4775980ADistributed-feedback semiconductor laser deviceHITACHI LTD·Filed 1985·Granted Oct 4, 1988·28 cites·11 claims
- 1079US6800889B2Semiconductor device and fabrication method thereofHITACHI LTD·Filed 2002·Granted Oct 5, 2004·21 cites·22 claims
- 1174US6635913B2Semiconductor storage deviceHITACHI LTD·Filed 2001·Granted Oct 21, 2003·14 cites·4 claims
- 1274US5689494ASurface atom fabrication method and apparatusHITACHI LTD·Filed 1995·Granted Nov 18, 1997·22 cites·20 claims
- 1374US5481120ASemiconductor device and its fabrication methodHITACHI LTD·Filed 1993·Granted Jan 2, 1996·36 cites·35 claims
- 1473US6396092B1Semiconductor device and method for manufacturing the sameHITACHI LTD·Filed 1998·Granted May 28, 2002·28 cites·10 claims
- 1567US6632721B1Method of manufacturing semiconductor devices having capacitors with electrode including hemispherical grainsHITACHI LTD·Filed 2000·Granted Oct 14, 2003·13 cites·20 claims
- 1666US6462368B2Ferroelectric capacitor with a self-aligned diffusion barrierHITACHI LTD·Filed 2002·Granted Oct 8, 2002·13 cites·14 claims
- 1766US6420192B2Method of manufacturing semiconductor memoryHITACHI LTD·Filed 2001·Granted Jul 16, 2002·10 cites·8 claims
- 1865US4716127AMethod of implanting spatially controlled P-N junctions by focused ion beams containing at least two speciesHITACHI LTD·Filed 1986·Granted Dec 29, 1987·29 cites·15 claims
- 1964US7767997B2Semiconductor device with solid electrolyte switchingHITACHI LTD·Filed 2008·Granted Aug 3, 2010·6 cites·11 claims
- 2062US6309894B1Semiconductor memory and method of manufacturing the sameHITACHI LTD·Filed 1997·Granted Oct 30, 2001·25 cites·7 claims
- 2161US6380574B1Ferroelectric capacitor with a self-aligned diffusion barrierHITACHI LTD·Filed 1998·Granted Apr 30, 2002·25 cites·35 claims
- 2257US6818523B2Semiconductor storage device manufacturing method which forms a hydrogen diffusion inhibiting layerHITACHI LTD·Filed 2003·Granted Nov 16, 2004·5 cites·4 claims
- 2353US6144052ASemiconductor device and its manufactureHITACHI LTD·Filed 1996·Granted Nov 7, 2000·13 cites·42 claims
- 2447US7256437B2Semiconductor storage device which includes a hydrogen diffusion inhibiting layerRENESAS TECH CORP·Filed 2004·Granted Aug 14, 2007·2 cites·21 claims
- 2546US9911916B2Method for vapor-phase growth of phase-change thin film, and device for vapor-phase growth of phase-change thin filmHITACHI LTD·Filed 2014·Granted Mar 6, 2018·0 cites·19 claims
- 2646US2009242868A1Semiconductor device and method of manufacturing the sameHITACHI LTD·Filed 2009·Application pending·0 cites
- 2744US6338994B1Semiconductor device and method of fabricating thereofHITACHI LTD·Filed 1999·Granted Jan 15, 2002·7 cites·14 claims
- 2844US2005074936A1Method of fabricating a semiconductor device including a reaction barrier film, a diffusion barrier film and a ferroelectric filmFiled 2004·Application pending·0 cites
- 2942US2011049454A1Semiconductor deviceTERAO MOTOYASU·Filed 2006·Application pending·0 cites
- 3039US7033958B2Semiconductor device and process for producing the sameTOKYO INST TECH·Filed 2003·Granted Apr 25, 2006·0 cites·17 claims
- 3138US6815741B2III-V single crystal as well as method of producing the same, and semiconductor device utilizing the III-V single crystalRENESAS TECH CORP·Filed 2003·Granted Nov 9, 2004·0 cites·4 claims
- 3237US6822276B1Memory structure with a ferroelectric capacitorRENESAS TECH CORP·Filed 1999·Granted Nov 23, 2004·5 cites·26 claims
- 3337US6630697B2GaAs single crystal as well as method of producing the same, and semiconductor device utilizing the GaAs single crystalHITACHI LTD·Filed 2001·Granted Oct 7, 2003·0 cites·4 claims
- 3437US2009039336A1Semiconductor deviceHITACHI LTD·Filed 2008·Application pending·0 cites
- 3537US2002158250A1Semiconductor device and process for producing the sameFiled 2001·Application pending·0 cites
- 3635US5770873AGaAs single crystal as well as method of producing the same, and semiconductor device utilizing the GaAs single crystalHITACHI LTD·Filed 1995·Granted Jun 23, 1998·3 cites·3 claims
- 3734US2002047147A1Semiconductor device and process for producing the semiconductor deviceFiled 2001·Application pending·0 cites
- 3833US6294804B1GaAs single crystal as well as method of producing the same, and semiconductor device utilizing the GaAs single crystalHITACHI LTD·Filed 1997·Granted Sep 25, 2001·2 cites·2 claims
- 3932US8618523B2Semiconductor deviceTAKAURA NORIKATSU·Filed 2006·Granted Dec 31, 2013·0 cites·14 claims
- 4029US6297523B1GaAs single crystal as well as method of producing the same, and semiconductor device utilizing the sameHITACHI LTD·Filed 1993·Granted Oct 2, 2001·1 cites·5 claims
- 4129US5733805AMethod of fabricating semiconductor device utilizing a GaAs single crystalHITACHI LTD·Filed 1995·Granted Mar 31, 1998·0 cites·4 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →