Method of fabricating a semiconductor device including a reaction barrier film, a diffusion barrier film and a ferroelectric film

Abstract

A method of fabricating a semiconductor device, is provided including forming an insulating film having an opening portion on a substrate having a transistor, filling a conductive film in the opening portion, forming a reaction barrier film functioning to prevent a reaction on the insulating film, and forming a diffusion barrier film on the conductive film. Next a first electrode is formed on the diffusion barrier film, a ferroelectric film, including at least one element of the group consisting of lead, barium and bismuth is formed on the first electrode after the step of forming the reaction barrier film, and a second electrode is formed on the ferroelectric film.

1 . A method of fabricating a semiconductor device, said method comprising: 
 a step of forming an insulating film having an opening portion on a substrate having a transistor;    a step of filling a conductive film in the opening portion;    a step of forming a reaction barrier film functioning to prevent a reaction on the insulating film;    a step of forming a diffusion barrier film on the conductive film;    a step of forming a first electrode on the diffusion barrier film;    a step of forming a ferroelectric film including at least one element of the group consisting of lead, barium and bismuth on the first electrode after the step of forming the reaction barrier film; and    a step of forming a second electrode on the ferroelectric film.    
   
   
       2 . The method of fabricating a semiconductor device according to  claim 1 , wherein the diffusion barrier film is formed by forming the reaction barrier film on the insulating film and the conductive film, removing the reaction barrier film on the conductive film and embedding the diffusion barrier film in a region removed of the reaction barrier film.  
   
   
       3 . A method of fabricating a semiconductor device, said method comprising: 
 a step of forming an insulating film having an opening portion on a substrate having a transistor;    a step of filling a conductive film in the opening portion;    a step of forming a reaction barrier film functioning to prevent a reaction on the insulating film;    a step of forming a diffusion barrier film on the conductive film after the step of forming the reaction barrier film;    a step of forming a first electrode on the diffusion barrier film;    a step of forming a ferroelectric film including at least one element of the group consisting of lead, barium and bismuth on the first electrode; and    a step of forming a second electrode on the ferroelectric film.    
   
   
       4 . The method of fabricating a semiconductor device according to  claim 3 , 
 wherein the diffusion barrier film is formed by forming the reaction barrier film on the insulating film and the conductive film, removing the reaction barrier film on the conductive film and embedding the diffusion barrier film in a region removed of the reaction barrier film.    
   
   
       5 . A method of fabricating a semiconductor device, said method comprising: 
 a step of forming an insulating film having an opening portion on a substrate having a transistor;    a step of filling a conductive film in the opening portion;    a step of forming a reaction barrier film comprising an oxide on the insulating film;    a step of forming a diffusion barrier film on the conductive film;    a step of forming a first electrode on the diffusion barrier film;    a step of forming a ferroelectric film including at least one element of the group consisting of lead, barium and bismuth on the first electrode; and    a step of forming a second electrode on the ferroelectric film.    
   
   
       6 . The method of fabricating a semiconductor device according to  claim 5 , 
 wherein the diffusion barrier film is formed by forming the reaction barrier film on the insulating film and the conductive film, removing the reaction barrier film on the conductive film and embedding the diffusion barrier film in a region removed of the reaction barrier film.    
   
   
       7 . The method of fabricating a semiconductor device according to  claim 5 , 
 wherein the step of forming the reaction barrier film comprises a step of forming a metal film and a step of oxidizing the metal.    
   
   
       8 . The method of fabricating a semiconductor device according to  claim 5 , 
 wherein the step of forming the reaction barrier film is a step of forming the reaction barrier film by any of a reactive sputtering method in an oxygen including atmosphere, a CVD process and a sol/gel containing process.