Inventor · disambiguated record
Yoshitaka Hamada
Also filed as: HAMADA YOSHITAKA
44 granted patents·26 pending applications·550 citations·filing 1985–2017
98Inventor score
Files withSHINETSU CHEMICAL CO29MATSUSHITA ELECTRIC INDUSTRIAL CO LTD16HAMADA YOSHITAKA12FUJI ELECTRIC CO LTD3MIPS CO LTD3
Top patents by PatentIndex Score
70 records- 0196US7541134B2Antireflective film-forming composition, method for manufacturing the same, and antireflective film and pattern formation method using the sameIBM·Filed 2005·Granted Jun 2, 2009·34 cites·8 claims
- 0294US7754330B2Organic silicon oxide core-shell particles and preparation method thereof, porous film-forming composition, porous film and formation method thereof, and semiconductor deviceSHINETSU CHEMICAL CO·Filed 2009·Granted Jul 13, 2010·24 cites·4 claims
- 0394US6485831B1Conductive powder and making processSHINETSU CHEMICAL CO·Filed 2000·Granted Nov 26, 2002·81 cites·17 claims
- 0494US4780603AIntegrated circuit card and connector arrangement using sameMIPS CO LTD·Filed 1985·Granted Oct 25, 1988·91 cites·8 claims
- 0591US7923522B2Process for preparing a dispersion liquid of zeolite fine particlesSHINETSU CHEMICAL CO·Filed 2008·Granted Apr 12, 2011·17 cites·11 claims
- 0689US8277600B2High-temperature bonding composition, substrate bonding method, and 3-D semiconductor deviceHAMADA YOSHITAKA·Filed 2009·Granted Oct 2, 2012·19 cites·2 claims
- 0788US7417104B2Porous film-forming composition, patterning process, and porous sacrificial filmSHINETSU CHEMICAL CO·Filed 2005·Granted Aug 26, 2008·9 cites·2 claims
- 0886US8434637B2Packaging bagMITA KOZO·Filed 2006·Granted May 7, 2013·14 cites·9 claims
- 0984US8461367B2Preparation process of trisilylamineHAMADA YOSHITAKA·Filed 2011·Granted Jun 11, 2013·4 cites·4 claims
- 1082US7485690B2Sacrificial film-forming composition, patterning process, sacrificial film and removal methodSHINETSU CHEMICAL CO·Filed 2005·Granted Feb 3, 2009·8 cites·17 claims
- 1181US7981815B2Semiconductor device producing method and substrate processing apparatusHITACHI INT ELECTRIC INC·Filed 2007·Granted Jul 19, 2011·8 cites·23 claims
- 1281US7385021B2Sacrificial film-forming composition, patterning process, sacrificial film and removal methodSHINETSU CHEMICAL CO·Filed 2005·Granted Jun 10, 2008·6 cites·15 claims
- 1381US4981988AOrganosiloxane compound with one end stopped with an aminoalkyl group and a manufacturing method thereofSHINETSU CHEMICAL CO·Filed 1989·Granted Jan 1, 1991·24 cites·7 claims
- 1480US4794243AIntegrated circuit card with increased number of connecting terminalsMIPS CO LTD·Filed 1988·Granted Dec 27, 1988·40 cites·4 claims
- 1578US7402621B2Porous-film-forming composition, preparation method of the composition, porous film and semiconductor deviceSHINETSU CHEMICAL CO·Filed 2005·Granted Jul 22, 2008·7 cites·6 claims
- 1676US7745094B2Resist composition and patterning process using the sameSHINETSU CHEMICAL CO·Filed 2007·Granted Jun 29, 2010·4 cites·8 claims
- 1776US7265234B2Silsesquioxane compound mixture, method of making, resist composition, and patterning processSHINETSU CHEMICAL CO·Filed 2006·Granted Sep 4, 2007·4 cites·6 claims
- 1875US7084505B2Porous film, composition and manufacturing method, interlayer dielectric film, and semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2004·Granted Aug 1, 2006·14 cites·8 claims
- 1974US7119354B2Composition for forming porous film, porous film and method for forming the same, interlevel insulator filmMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2004·Granted Oct 10, 2006·13 cites·8 claims
- 2073US8257528B2Substrate joining method and 3-D semiconductor deviceYAGIHASHI FUJIO·Filed 2009·Granted Sep 4, 2012·5 cites·10 claims
- 2171US7132473B2Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Nov 7, 2006·11 cites·3 claims
- 2268US6930393B2Composition for forming porous film, porous film and method for forming the same, interlayer insulator film, and semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2004·Granted Aug 16, 2005·12 cites·12 claims
- 2365US6680081B2Conductive powder and making processSHINETSU CHEMICAL CO·Filed 2002·Granted Jan 20, 2004·5 cites·11 claims
- 2464US7786022B2Method for forming insulating film with low dielectric constantSHINETSU CHEMICAL CO·Filed 2008·Granted Aug 31, 2010·1 cites·6 claims
- 2564US4766480AIntegrated circuit card having memory errasable with ultraviolet rayMIPS CO LTD·Filed 1987·Granted Aug 23, 1988·26 cites·2 claims
- 2663US9018095B2Formation of conductive circuit, conductive circuit, and conductive ink compositionSHINETSU CHEMICAL CO·Filed 2014·Granted Apr 28, 2015·1 cites·6 claims
- 2759US7239018B2Composition for forming a porous film prepared by hydrolysis and condensation of an alkoxysilane using a trialkylmethylammonium hydroxide catalystMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2004·Granted Jul 3, 2007·6 cites·11 claims
- 2858US7651829B2Positive resist material and pattern formation method using the sameSHINETSU CHEMICAL CO·Filed 2004·Granted Jan 26, 2010·9 cites·8 claims
- 2955US6114500APurification of organic silicon polymerSHINETSU CHEMICAL CO·Filed 1999·Granted Sep 5, 2000·11 cites·14 claims
- 3055US4950726AOrganopolysiloxane compound having liquid-crystalline phaseSHINETSU CHEMICAL CO·Filed 1989·Granted Aug 21, 1990·9 cites·4 claims
- 3154US7357961B2Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2004·Granted Apr 15, 2008·4 cites·7 claims
- 3253US2008038664A1Silsesquioxane compound mixture, method of making, resist composition, and patterning processSHINETSU CHEMICAL CO·Filed 2007·Application pending·0 cites
- 3352US8546597B2Organic silane compound for forming Si-containing film by plasma CVD and method for forming Si-containing filmHAMADA YOSHITAKA·Filed 2009·Granted Oct 1, 2013·0 cites·6 claims
- 3452US5113002APolysilane copolymers and method for preparing sameSHINETSU CHEMICAL CO·Filed 1990·Granted May 12, 1992·5 cites·6 claims
- 3551US2007178319A1Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2007·Application pending·0 cites
- 3651US2007087124A1Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2006·Application pending·0 cites
- 3751US2007135565A1Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2006·Application pending·0 cites
- 3850US7126208B2Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Oct 24, 2006·2 cites·8 claims
- 3950US2006289849A1Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2006·Application pending·0 cites
- 4050US2010061915A1Method for depositing si-containing film, insulator film, and semiconductor deviceSHINETSU CHEMICAL CO·Filed 2009·Application pending·0 cites
- 4149US7638256B2Fluorinated cyclic structure-bearing silicon compounds and silicone resins, resist compositions using the same, and patterning processSHINETSU CHEMICAL CO·Filed 2006·Granted Dec 29, 2009·0 cites·11 claims
- 4249US2006220253A1Porous film, composition and manufacturing method, interlayer dielectric film, and semiconductor deviceHAMADA YOSHITAKA·Filed 2006·Application pending·0 cites
- 4349US2014060903A1Conductive ink composition, formation of conductive circuit, and conductive circuitSHINETSU CHEMICAL CO·Filed 2013·Application pending·0 cites
- 4448US7332446B2Composition for forming porous film, porous film and method for forming the same, interlevel insulator film and semiconductor deviceSHINETSU CHEMICAL CO·Filed 2004·Granted Feb 19, 2008·1 cites·12 claims
- 4548US5554710AConductive polymers and process for preparing the sameSHINETSU CHEMICAL CO·Filed 1994·Granted Sep 10, 1996·6 cites·7 claims
- 4648US2009294922A1Organic silicon oxide fine particle and preparation method thereof, porous film-forming composition, porous film and formation method thereof, and semiconductor deviceHAMADA YOSHITAKA·Filed 2009·Application pending·0 cites
- 4747US8604126B2Silicone resin composition and optical materialHAMADA YOSHITAKA·Filed 2012·Granted Dec 10, 2013·0 cites·6 claims
- 4847US7341775B2Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Mar 11, 2008·1 cites·14 claims
- 4947US2008290472A1Semiconductor interlayer-insulating film forming composition, preparation method thereof, film forming method, and semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2008·Application pending·0 cites
- 5047US2008274627A1Silicon-containing film, forming material, making method, and semiconductor deviceSHINETSU CHEMICAL CO·Filed 2008·Application pending·0 cites
Showing the top 50 of 70 patent records by PatentIndex Score.
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