Inventor · disambiguated record
Shwangming Jeng
Also filed as: JENG SHWANGMING
14 granted patents·1 pending application·368 citations·filing 1999–2002
94Inventor score
Files withTAIWAN SEMICONDUCTOR MFG15
Top patents by PatentIndex Score
15 records- 0190US6358839B1Solution to black diamond film delamination problemTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Mar 19, 2002·53 cites·14 claims
- 0287US6483173B2Solution to black diamond film delamination problemTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Nov 19, 2002·40 cites·5 claims
- 0384US6268294B1Method of protecting a low-K dielectric materialTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Jul 31, 2001·32 cites·16 claims
- 0478US6451701B1Method for making low-resistance silicide contacts between closely spaced electrically conducting lines for field effect transistorsTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Sep 17, 2002·22 cites·19 claims
- 0578US6251777B1Thermal annealing method for forming metal silicide layerTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Jun 26, 2001·42 cites·16 claims
- 0677US6457477B1Method of cleaning a copper/porous low-k dual damascene etchTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Oct 1, 2002·31 cites·31 claims
- 0774US6258715B1Process for low-k dielectric with dummy plugsTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Jul 10, 2001·45 cites·25 claims
- 0869US6207483B1Method for smoothing polysilicon gate structures in CMOS devicesTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Mar 27, 2001·12 cites·3 claims
- 0958US6143673AMethod for forming gap filling silicon oxide intermetal dielectric (IMD) layer formed employing ozone-tEOSTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Nov 7, 2000·21 cites·16 claims
- 1055US6277658B1Method for monitoring alignment mark shieldingTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Aug 21, 2001·20 cites·20 claims
- 1153US6242356B1Etchback method for forming microelectronic layer with enhanced surface smoothnessTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Jun 5, 2001·17 cites·38 claims
- 1248US6121111AMethod of removing tungsten near the wafer edge after CMPTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Sep 19, 2000·14 cites·20 claims
- 1343US6080638AFormation of thin spacer at corner of shallow trench isolation (STI)TAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Jun 27, 2000·13 cites·31 claims
- 1438US2002084032A1Multiple chamber vacuum processing system configuration for improving the stability of mark shielding processTAIWAN SEMICONDUCTOR MFG·Filed 2002·Application pending·0 cites
- 1537US6328815B1Multiple chamber vacuum processing system configuration for improving the stability of mark shielding processTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Dec 11, 2001·6 cites·4 claims
Join the waitlist — get patent alerts
Get an alert when Shwangming Jeng files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →