Inventor · disambiguated record
Teruhiko Amano
Also filed as: AMANO TERUHIKO
16 granted patents·2 pending applications·428 citations·filing 1997–2015
95Inventor score
Top patents by PatentIndex Score
18 records- 0194US8164934B2Content addressable memoryWATANABE NAOYA·Filed 2010·Granted Apr 24, 2012·18 cites·4 claims
- 0293US6064621AMulti-bank clock synchronous type semiconductor memory device having improved memory array and power supply arrangementMITSUBISHI ELECTRIC CORP·Filed 1998·Granted May 16, 2000·103 cites·19 claims
- 0387US5914907ASemiconductor memory device capable of increasing chip yields while maintaining rapid operationMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Jun 22, 1999·69 cites·8 claims
- 0482US8310852B2Content addressable memoryWATANABE NAOYA·Filed 2012·Granted Nov 13, 2012·5 cites·1 claims
- 0579US6411556B1Semiconductor memory device with improved layout and redundancy determining circuitsMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Jun 25, 2002·24 cites·8 claims
- 0678US9620214B2Content addressable memory with reduced power consumption and increased search operation speedRENESAS ELECTRONICS CORP·Filed 2015·Granted Apr 11, 2017·3 cites·2 claims
- 0778US6756652B2Semiconductor memory device with efficiently laid-out internal interconnection linesRENESAS TECH CORP·Filed 2003·Granted Jun 29, 2004·27 cites·7 claims
- 0877US6072743AHigh speed operable semiconductor memory device with memory blocks arranged about the centerMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Jun 6, 2000·35 cites·7 claims
- 0976US5894448ASemiconductor memory device having hierarchy control circuit architecture of master/local control circuits permitting high speed accessingMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Apr 13, 1999·38 cites·20 claims
- 1073US6215720B1High speed operable semiconductor memory device with memory blocks arranged about the centerMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Apr 10, 2001·18 cites·7 claims
- 1172US6194776B1Semiconductor circuit device having triple-well structure in semiconductor substrate, method of fabricating the same, and mask device for fabrication of the sameMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Feb 27, 2001·43 cites·12 claims
- 1269US6462999B1Semiconductor memory device having internal data read circuit excellent in noise immunityMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Oct 8, 2002·17 cites·8 claims
- 1368US6272034B1Semiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Aug 7, 2001·16 cites·4 claims
- 1460US8638583B2Content addressable memoryWATANABE NAOYA·Filed 2012·Granted Jan 28, 2014·1 cites·1 claims
- 1550US9042148B2Content addressable memoryRENESAS ELECTRONICS CORP·Filed 2014·Granted May 26, 2015·0 cites·1 claims
- 1644US6337506B2Semiconductor memory device capable of performing stable operation for noise while preventing increase in chip areaMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Jan 8, 2002·11 cites·14 claims
- 1743US2007247885A1Content addressable memoryRENESAS TECH CORP·Filed 2007·Application pending·0 cites
- 1833US2002118584A1Semiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 2002·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →