Inventor · disambiguated record
Timothy Henson
Also filed as: HENSON TIMOTHY · HENSON TIMOTHY D · HENSON TIMOTHY DONALD
35 granted patents·16 pending applications·212 citations·filing 2003–2024
96Inventor score
Files withINT RECTIFIER CORP15INFINEON TECHNOLOGIES AMERICAS CORP14INFINEON TECHNOLOGIES AUSTRIA AG14HENSON TIMOTHY2HENSON TIMOTHY D2
Top patents by PatentIndex Score
51 records- 0194US9673318B1Semiconductor device including a gate trench having a gate electrode located above a buried electrodeINFINEON TECHNOLOGIES AMERICAS CORP·Filed 2016·Granted Jun 6, 2017·19 cites·20 claims
- 0292US9620583B2Power semiconductor device with source trench and termination trench implantsINFINEON TECHNOLOGIES AMERICAS CORP·Filed 2015·Granted Apr 11, 2017·13 cites·20 claims
- 0391US12453139B2Transistor device and method for producing a transistor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2022·Granted Oct 21, 2025·2 cites·17 claims
- 0490US7579650B2Termination design for deep source electrode MOSFETINT RECTIFIER CORP·Filed 2007·Granted Aug 25, 2009·16 cites·6 claims
- 0586US9691864B1Semiconductor device having a cavity and method for manufacturing thereofINFINEON TECHNOLOGIES AMERICAS CORP·Filed 2016·Granted Jun 27, 2017·5 cites·15 claims
- 0686US6979862B2Trench MOSFET superjunction structure and method to manufactureINT RECTIFIER CORP·Filed 2004·Granted Dec 27, 2005·41 cites·16 claims
- 0784US9202882B2Semiconductor device with a thick bottom field plate trench having a single dielectric and angled sidewallsINT RECTIFIER CORP·Filed 2014·Granted Dec 1, 2015·4 cites·20 claims
- 0884US7482654B2MOSgated power semiconductor device with source field electrodeINT RECTIFIER CORP·Filed 2005·Granted Jan 27, 2009·13 cites·19 claims
- 0982US8860194B2Buck converter power packageMA LING·Filed 2012·Granted Oct 14, 2014·8 cites·21 claims
- 1082US7161208B2Trench mosfet with field relief featureINT RECTIFIER CORP·Filed 2003·Granted Jan 9, 2007·30 cites·15 claims
- 1178US7998808B2Semiconductor device fabrication using spacersINT RECTIFIER CORP·Filed 2009·Granted Aug 16, 2011·8 cites·16 claims
- 1276US9991347B2Semiconductor device having a cavityINFINEON TECHNOLOGIES AMERICAS CORP·Filed 2017·Granted Jun 5, 2018·2 cites·15 claims
- 1376US6919599B2Short channel trench MOSFET with reduced gate chargeINT RECTIFIER CORP·Filed 2003·Granted Jul 19, 2005·23 cites·17 claims
- 1476US2025081621A1Semiconductor device having an isolation structure that delimits a region of an epitaxial layer or layer stackINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2024·Application pending·0 cites
- 1574US9761676B2Power semiconductor device with embedded field electrodesINFINEON TECHNOLOGIES AMERICAS CORP·Filed 2015·Granted Sep 12, 2017·2 cites·16 claims
- 1674US9627328B2Semiconductor structure having integrated snubber resistanceINFINEON TECHNOLOGIES AMERICAS CORP·Filed 2015·Granted Apr 18, 2017·2 cites·20 claims
- 1774US9590096B2Vertical FET having reduced on-resistanceINFINEON TECHNOLOGIES AMERICAS CORP·Filed 2015·Granted Mar 7, 2017·2 cites·20 claims
- 1870US9299793B2Semiconductor device with a field plate trench having a thick bottom dielectricINT RECTIFIER CORP·Filed 2014·Granted Mar 29, 2016·1 cites·20 claims
- 1969US12199102B2Isolation structure for separating different transistor regions on the same semiconductor dieINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2022·Granted Jan 14, 2025·0 cites·16 claims
- 2069US7554153B2Power semiconductor deviceINT RECTIFIER CORP·Filed 2007·Granted Jun 30, 2009·4 cites·17 claims
- 2167US7671441B2Trench MOSFET with sidewall spacer gatesINT RECTIFIER CORP·Filed 2006·Granted Mar 2, 2010·4 cites·5 claims
- 2260US8884367B2MOSgated power semiconductor device with source field electrodeGIRDHAR DEV ALOK·Filed 2008·Granted Nov 11, 2014·2 cites·20 claims
- 2360US2025301697A1Transistor Device Having a Termination Region and Method of Producing the Transistor DeviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2024·Application pending·0 cites
- 2459US10483359B2Method of fabricating a power semiconductor deviceINFINEON TECHNOLOGIES AMERICAS CORP·Filed 2017·Granted Nov 19, 2019·0 cites·8 claims
- 2559US9735241B2Semiconductor device with a field plate double trench having a thick bottom dielectricINFINEON TECHNOLOGIES AMERICAS CORP·Filed 2014·Granted Aug 15, 2017·0 cites·4 claims
- 2659US2025254959A1Semiconductor Device and Method of Producing a Semiconductor DeviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2024·Application pending·0 cites
- 2757US12191296B2Method of producing a multi-chip assemblyINFINEON TECHNOLOGIES AG·Filed 2021·Granted Jan 7, 2025·0 cites·12 claims
- 2855US8536645B2Trench MOSFET and method for fabricating sameHENSON TIMOTHY D·Filed 2011·Granted Sep 17, 2013·1 cites·20 claims
- 2955US8101995B2Integrated MOSFET and Schottky deviceHENSON TIMOTHY·Filed 2008·Granted Jan 24, 2012·2 cites·20 claims
- 3055US2024194745A1Semiconductor device having a shielding layer and a method of fabricating the semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2022·Application pending·0 cites
- 3155US2023352582A1Power transistor device and method of fabricating a transistor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2023·Application pending·0 cites
- 3254US2024047517A1Power semiconductor device having counter-doped regions in both an active cell region and an inactive cell regionINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2022·Application pending·0 cites
- 3353US2024405120A1Semiconductor device having gate trenches and field plate trenches and a method of fabricating the semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2023·Application pending·0 cites
- 3453US2024243130A1Semiconductor Die with a Vertical Power Transistor DeviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2022·Application pending·0 cites
- 3552US2023098462A1Transistor device and method for producing a transistor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2022·Application pending·0 cites
- 3651US12349400B2Edge termination structure for power transistor devicesINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2021·Granted Jul 1, 2025·0 cites·21 claims
- 3750US9966464B2Method of forming a semiconductor structure having integrated snubber resistanceINFINEON TECHNOLOGIES AMERICAS CORP·Filed 2017·Granted May 8, 2018·0 cites·19 claims
- 3850US9006824B2Power semiconductor device with reduced on-resistance and increased breakdown voltageINT RECTIFIER CORP·Filed 2014·Granted Apr 14, 2015·0 cites·20 claims
- 3950US2009278198A1Deep source electrode MOSFETINT RECTIFIER CORP·Filed 2009·Application pending·0 cites
- 4050US2024113115A1Trench gate nmos transistor and trench gate pmos transistor monolithically integrated in same semiconductor dieINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2022·Application pending·0 cites
- 4149US7410851B2Low voltage superjunction MOSFETINT RECTIFIER CORP·Filed 2003·Granted Aug 12, 2008·4 cites·6 claims
- 4249US6969657B2Superjunction device and method of manufacture thereforINT RECTIFIER CORP·Filed 2004·Granted Nov 29, 2005·4 cites·12 claims
- 4349US2017213909A1Method for Fabricating a Shallow and Narrow Trench FETINFINEON TECHNOLOGIES AMERICAS CORP·Filed 2017·Application pending·0 cites
- 4446US2022336594A1Transistor device having charge compensating field plates in-line with body contactsINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2021·Application pending·0 cites
- 4541US9991377B2Trench FET with ruggedness enhancement regionsINFINEON TECHNOLOGIES AMERICAS CORP·Filed 2013·Granted Jun 5, 2018·0 cites·6 claims
- 4641US9818743B2Power semiconductor device with contiguous gate trenches and offset source trenchesINFINEON TECHNOLOGIES AMERICAS CORP·Filed 2014·Granted Nov 14, 2017·0 cites·16 claims
- 4741US9653597B2Method for fabricating a shallow and narrow trench FET and related structuresHENSON TIMOTHY D·Filed 2010·Granted May 16, 2017·0 cites·5 claims
- 4836US2008191273A1Mosfet device having improved avalanche capabilityHENSON TIMOTHY·Filed 2008·Application pending·0 cites
- 4933US2015325685A1Power Semiconductor Device with Low RDSON and High Breakdown VoltageINT RECTIFIER CORP·Filed 2015·Application pending·0 cites
- 5032US2016172295A1Power FET Having Reduced Gate ResistanceINFINEON TECHNOLOGIES AMERICAS CORP·Filed 2015·Application pending·0 cites
Showing the top 50 of 51 patent records by PatentIndex Score.
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