Inventor · disambiguated record
Yi-Feng Chang
Also filed as: CHANG YI · CHANG YI-FENG
54 granted patents·13 pending applications·130 citations·filing 2005–2025
98Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD33TAIWAN SEMICONDUCTOR MFG10SILICONWARE PRECISION INDUSTRIES CO LTD8LEE JAM-WEM4CHANG YI-FENG2
Top patents by PatentIndex Score
67 records- 0197US11908859B2Semiconductor device including transistors sharing gates with structures having reduced parasitic circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 20, 2024·2 cites·20 claims
- 0293US8476736B2Low leakage diodesLEE JAM-WEM·Filed 2011·Granted Jul 2, 2013·14 cites·6 claims
- 0392US11416666B1Integrated circuit and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 16, 2022·2 cites·20 claims
- 0492US10643988B2Intelligent diode structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 5, 2020·6 cites·20 claims
- 0589US9887275B2Method of reducing the heights of source-drain sidewall spacers of FinFETs through etchingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Feb 6, 2018·4 cites·20 claims
- 0689US8841696B2High-trigger current SCRLEE JAM-WEM·Filed 2012·Granted Sep 23, 2014·11 cites·20 claims
- 0788US10411005B2Intelligent diode structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Sep 10, 2019·4 cites·20 claims
- 0888US9589841B2Electronic package and fabrication method thereofSILICONWARE PRECISION INDUSTRIES CO LTD·Filed 2015·Granted Mar 7, 2017·6 cites·16 claims
- 0987US12396256B2Semiconductor device including transistors sharing gates with structures having reduced parasitic circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Aug 19, 2025·0 cites·20 claims
- 1087US9209302B2Method of reducing the heights of source-drain sidewall spacers of FinFETs through etchingTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Dec 8, 2015·5 cites·20 claims
- 1187US8809961B2Electrostatic discharge (ESD) guard ring protective structureTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Aug 19, 2014·7 cites·20 claims
- 1287US8541848B2High-voltage MOSFETs having current diversion region in substrate near fieldplateHUANG YUN-PEI·Filed 2011·Granted Sep 24, 2013·21 cites·15 claims
- 1386US8587071B2Electrostatic discharge (ESD) guard ring protective structureTSAI TSUNG-CHE·Filed 2012·Granted Nov 19, 2013·10 cites·11 claims
- 1485US2024113044A1Semiconductor Devices Having an Electro-static Discharge Protection StructureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1584US9893188B2Semiconductor structure with template for transition metal dichalcogenides channel material growthTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Feb 13, 2018·4 cites·19 claims
- 1684US9349806B2Semiconductor structure with template for transition metal dichalcogenides channel material growthTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted May 24, 2016·6 cites·20 claims
- 1784US2024079408A1Semiconductor device including transistors sharing gates with structures having reduced parasitic circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1883US12512422B2Semiconductor devices having an electro-static discharge protection structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 30, 2025·0 cites·20 claims
- 1983US10366992B2Semiconductor device including transistors sharing gatesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jul 30, 2019·2 cites·20 claims
- 2082US2025301797A1Semiconductor device having multiple electrostatic discharge (esd) pathsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2181US9548367B2Method of reducing the heights of source-drain sidewall spacers of FinFETs through etching and the FinFETs thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 17, 2017·2 cites·20 claims
- 2280US9368629B2Diode structure compatible with FinFET processTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted Jun 14, 2016·2 cites·20 claims
- 2380US2024387511A1Semiconductor device having multiple electrostatic discharge (esd) pathsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2478US11855088B2Semiconductor device including transistors sharing gates with structures having reduced parasitic circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·0 cites·20 claims
- 2577US11282830B2High voltage ESD protection apparatusTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Mar 22, 2022·1 cites·20 claims
- 2676US8604582B2Schottky diodeLEE JAM-WEM·Filed 2011·Granted Dec 10, 2013·4 cites·19 claims
- 2775US11775726B2Integrated circuit having latch-up immunityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 3, 2023·0 cites·20 claims
- 2874US12349470B2Semiconductor device having multiple electrostatic discharge (ESD) pathsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 1, 2025·0 cites·20 claims
- 2974US9064720B2Decoupling capacitor for FinFET compatible processTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jun 23, 2015·3 cites·20 claims
- 3074US2023367947A1Integrated circuit having latch-up immunityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3173US11848286B2Semiconductor devices having an electro-static discharge protection structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 19, 2023·0 cites·20 claims
- 3273US11688702B2Semiconductor devices having an electro-static discharge protection structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 27, 2023·0 cites·20 claims
- 3373US11688701B2Semiconductor devices having an electro-static discharge protection structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 27, 2023·0 cites·18 claims
- 3472US9093492B2Diode structure compatible with FinFET processTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Jul 28, 2015·2 cites·20 claims
- 3572US2022165725A1High Voltage ESD Protection ApparatusTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 3671US10867987B2Integrated circuit device having ESD protectionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 15, 2020·1 cites·20 claims
- 3771US8823139B2Low leakage diodesTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Sep 2, 2014·2 cites·14 claims
- 3870US8896130B2Multi-chip stack structure and method for fabricating the sameLIU CHUNG-LUN·Filed 2008·Granted Nov 25, 2014·6 cites·13 claims
- 3969US10930640B2Intelligent diode structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 23, 2021·0 cites·20 claims
- 4066US11222893B2Semiconductor device including transistors sharing gates with structures having reduced parasitic circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jan 11, 2022·0 cites·20 claims
- 4164US9754927B2Method for fabricating multi-chip stack structureSILICONWARE PRECISION INDUSTRIES CO LTD·Filed 2014·Granted Sep 5, 2017·1 cites·13 claims
- 4262US2025006748A1Light Sensor Structure and Packaging Method thereofSENSORTEK TECH CORP·Filed 2024·Application pending·0 cites
- 4359US9978739B2Semiconductor arrangement facilitating enhanced thermo-conductionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted May 22, 2018·0 cites·20 claims
- 4458US9230961B2Semiconductor arrangement facilitating enhanced thermo-conductionTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jan 5, 2016·0 cites·20 claims
- 4558US8860168B2Schottky isolated NMOS for latch-up preventionCHANG YI-FENG·Filed 2012·Granted Oct 14, 2014·1 cites·19 claims
- 4657US10163891B2High voltage ESD protection apparatusTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 25, 2018·0 cites·21 claims
- 4756US9601627B2Diode structure compatible with FinFET processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Mar 21, 2017·0 cites·20 claims
- 4855US10734330B2Semiconductor devices having an electro-static discharge protection structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 4, 2020·0 cites·20 claims
- 4955US9666575B2Semiconductor arrangement facilitating enhanced thermo-conductionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted May 30, 2017·0 cites·20 claims
- 5055US9224727B2ESD protection apparatusTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Dec 29, 2015·0 cites·20 claims
Showing the top 50 of 67 patent records by PatentIndex Score.
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