Inventor · disambiguated record
Xiuyu Cai
Also filed as: CAI JR XIUYU · CAI XIUYU · CAI XIUYU HARRY
175 granted patents·27 pending applications·1,402 citations·filing 2010–2025
99Inventor score
Top patents by PatentIndex Score
202 records- 0199US9455331B1Method and structure of forming controllable unmerged epitaxial materialIBM·Filed 2015·Granted Sep 27, 2016·66 cites·14 claims
- 0299US8703557B1Methods of removing dummy fin structures when forming finFET devicesGLOBALFOUNDRIES INC·Filed 2013·Granted Apr 22, 2014·63 cites·23 claims
- 0399US8524592B1Methods of forming semiconductor devices with self-aligned contacts and low-k spacers and the resulting devicesXIE RUILONG·Filed 2012·Granted Sep 3, 2013·70 cites·18 claims
- 0498US9748352B2Multi-channel gate-all-around FETST MICROELECTRONICS INC·Filed 2015·Granted Aug 29, 2017·28 cites·20 claims
- 0598US9502518B2Multi-channel gate-all-around FETST MICROELECTRONICS INC·Filed 2014·Granted Nov 22, 2016·46 cites·18 claims
- 0698US9202920B1Methods for forming vertical and sharp junctions in finFET structuresST MICROELECTRONICS INC·Filed 2014·Granted Dec 1, 2015·42 cites·31 claims
- 0797US10649145B2Two-filter light detection devices and methods related to sameILLUMINA INC·Filed 2018·Granted May 12, 2020·10 cites·20 claims
- 0897US9660050B1Replacement low-k spacerIBM·Filed 2015·Granted May 23, 2017·14 cites·14 claims
- 0997US9391200B2FinFETs having strained channels, and methods of fabricating finFETs having strained channelsST MICROELECTRONICS INC·Filed 2014·Granted Jul 12, 2016·27 cites·21 claims
- 1097US9337050B1Methods of forming fins for finFET semiconductor devices and the selective removal of such finsGLOBALFOUNDRIES INC·Filed 2015·Granted May 10, 2016·20 cites·29 claims
- 1197US9190486B2Integrated circuits and methods for fabricating integrated circuits with reduced parasitic capacitanceGLOBALFOUNDRIES INC·Filed 2012·Granted Nov 17, 2015·35 cites·20 claims
- 1297US9190260B1Topological method to build self-aligned MTJ without a maskGLOBALFOUNDRIES INC·Filed 2014·Granted Nov 17, 2015·39 cites·14 claims
- 1397US9147748B1Methods of forming replacement spacer structures on semiconductor devicesGLOBALFOUNDRIES INC·Filed 2014·Granted Sep 29, 2015·36 cites·14 claims
- 1497US9082852B1LDMOS FinFET device using a long channel region and method of manufactureST MICROELECTRONICS INC·Filed 2014·Granted Jul 14, 2015·32 cites·30 claims
- 1597US8921191B2Integrated circuits including FINFET devices with lower contact resistance and reduced parasitic capacitance and methods for fabricating the sameGLOBALFOUNDRIES INC·Filed 2013·Granted Dec 30, 2014·30 cites·14 claims
- 1697US8541274B1Methods of forming 3-D semiconductor devices with a nanowire gate structure wherein the nanowire gate structure is formed after source/drain formationXIE RUILONG·Filed 2012·Granted Sep 24, 2013·39 cites·15 claims
- 1796US9064890B1Methods of forming isolation material on FinFET semiconductor devices and the resulting devicesGLOBALFOUNDRIES INC·Filed 2014·Granted Jun 23, 2015·25 cites·18 claims
- 1896US8835262B2Methods of forming bulk FinFET devices by performing a recessing process on liner materials to define different fin heights and FinFET devices with such recessed liner materialsGLOBALFOUNDRIES INC·Filed 2013·Granted Sep 16, 2014·21 cites·24 claims
- 1996US8551843B1Methods of forming CMOS semiconductor devicesCAI XIUYU·Filed 2012·Granted Oct 8, 2013·34 cites·18 claims
- 2095US9202919B1FinFETs and techniques for controlling source and drain junction profiles in finFETsST MICROELECTRONICS INC·Filed 2014·Granted Dec 1, 2015·21 cites·26 claims
- 2195US9153498B2Methods of forming semiconductor device with self-aligned contact elements and the resulting devicesGLOBALFOUNDRIES INC·Filed 2013·Granted Oct 6, 2015·18 cites·20 claims
- 2295US9070742B2FinFet integrated circuits with uniform fin height and methods for fabricating the sameGLOBALFOUNDRIES INC·Filed 2013·Granted Jun 30, 2015·24 cites·18 claims
- 2395US8841711B1Methods of increasing space for contact elements by using a sacrificial liner and the resulting deviceGLOBALFOUNDRIES INC·Filed 2013·Granted Sep 23, 2014·23 cites·21 claims
- 2495US8580634B1Methods of forming 3-D semiconductor devices with a nanowire gate structure wherein the nanowire gate structure is formed prior to source/drain formationXIE RUILONG·Filed 2012·Granted Nov 12, 2013·22 cites·19 claims
- 2594US10879296B2Image sensor structureILLUMINA INC·Filed 2018·Granted Dec 29, 2020·5 cites·16 claims
- 2694US9653579B2Method for making semiconductor device with filled gate line end recessesST MICROELECTRONICS INC·Filed 2014·Granted May 16, 2017·10 cites·19 claims
- 2794US9564358B1Forming reliable contacts on tight semiconductor pitchIBM·Filed 2015·Granted Feb 7, 2017·10 cites·15 claims
- 2894US9559009B2Gate structure cut after formation of epitaxial active regionsIBM·Filed 2015·Granted Jan 31, 2017·8 cites·10 claims
- 2994US9299721B2Method for making semiconductor device with different fin setsST MICROELECTRONICS INC·Filed 2014·Granted Mar 29, 2016·14 cites·26 claims
- 3094US9287130B1Method for single fin cuts using selective ion implantsGLOBALFOUNDRIES INC·Filed 2015·Granted Mar 15, 2016·12 cites·23 claims
- 3194US9142651B1Methods of forming a FinFET semiconductor device so as to reduce punch-through leakage currents and the resulting deviceGLOBALFOUNDRIES INC·Filed 2014·Granted Sep 22, 2015·17 cites·26 claims
- 3294US9029920B2Semiconductor devices and methods of fabrication with reduced gate and contact resistancesGLOBALFOUNDRIES INC·Filed 2013·Granted May 12, 2015·15 cites·20 claims
- 3394US9018711B1Selective growth of a work-function metal in a replacement metal gate of a semiconductor deviceGLOBALFOUNDRIES INC·Filed 2013·Granted Apr 28, 2015·14 cites·15 claims
- 3494US8753970B2Methods of forming semiconductor devices with self-aligned contacts and the resulting devicesXIE RUILONG·Filed 2012·Granted Jun 17, 2014·24 cites·13 claims
- 3593US10134840B2Series resistance reduction in vertically stacked silicon nanowire transistorsIBM·Filed 2015·Granted Nov 20, 2018·8 cites·9 claims
- 3693US9466722B2Large area contacts for small transistorsST MICROELECTRONICS INC·Filed 2014·Granted Oct 11, 2016·11 cites·16 claims
- 3793US9281382B2Method for making semiconductor device with isolation pillars between adjacent semiconductor finsST MICROELECTRONICS INC·Filed 2014·Granted Mar 8, 2016·16 cites·23 claims
- 3893US8941156B2Self-aligned dielectric isolation for FinFET devicesIBM·Filed 2013·Granted Jan 27, 2015·13 cites·16 claims
- 3993US8846477B2Methods of forming 3-D semiconductor devices using a replacement gate technique and a novel 3-D deviceGLOBALFOUNDRIES INC·Filed 2012·Granted Sep 30, 2014·14 cites·16 claims
- 4093US8815742B2Methods of forming bulk FinFET semiconductor devices by performing a liner recessing process to define fin heights and FinFET devices with such a recessed linerGLOBALFOUNDRIES INC·Filed 2012·Granted Aug 26, 2014·14 cites·13 claims
- 4192US10276573B2FinFET including tunable fin height and tunable fin width ratioIBM·Filed 2016·Granted Apr 30, 2019·6 cites·16 claims
- 4292US9660083B2LDMOS finFET device and method of manufacture using a trench confined epitaxial growth processST MICROELECTRONICS INC·Filed 2014·Granted May 23, 2017·9 cites·30 claims
- 4392US9425292B1Field effect transistor device spacersIBM·Filed 2016·Granted Aug 23, 2016·6 cites·1 claims
- 4492US9269815B2FinFET semiconductor device with a recessed liner that defines a fin height of the FinFet deviceGLOBALFOUNDRIES INC·Filed 2014·Granted Feb 23, 2016·12 cites·15 claims
- 4592US9196696B2Integrated circuits with improved gate uniformity and methods for fabricating sameGLOBALFOUNDRIES INC·Filed 2014·Granted Nov 24, 2015·10 cites·20 claims
- 4692US9117908B2Methods of forming replacement gate structures for semiconductor devices and the resulting semiconductor productsGLOBALFOUNDRIES INC·Filed 2013·Granted Aug 25, 2015·11 cites·15 claims
- 4792US8928048B2Methods of forming semiconductor device with self-aligned contact elements and the resulting deviceGLOBALFOUNDRIES INC·Filed 2013·Granted Jan 6, 2015·11 cites·15 claims
- 4891US9859423B2Hetero-channel FinFETST MICROELECTRONICS INC·Filed 2014·Granted Jan 2, 2018·8 cites·21 claims
- 4991US9660057B2Method of forming a reduced resistance fin structureST MICROELECTRONICS INC·Filed 2014·Granted May 23, 2017·8 cites·23 claims
- 5091US9263338B2Semiconductor device including vertically spaced semiconductor channel structures and related methodsST MICROELECTRONICS INC·Filed 2013·Granted Feb 16, 2016·13 cites·18 claims
Showing the top 50 of 202 patent records by PatentIndex Score.
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