Inventor · disambiguated record
Christopher Leitz
Also filed as: LEITZ CHRISTOPHER · LEITZ CHRISTOPHER W
25 granted patents·5 pending applications·394 citations·filing 2002–2020
96Inventor score
Files withAMBERWAVE SYSTEMS CORP10MASSACHUSETTS INST TECHNOLOGY7GREIFF PAUL3LEITZ CHRISTOPHER2MTPV POWER CORP2
Top patents by PatentIndex Score
30 records- 0197US7049627B2Semiconductor heterostructures and related methodsAMBERWAVE SYSTEMS CORP·Filed 2003·Granted May 23, 2006·102 cites·21 claims
- 0296US7829442B2Semiconductor heterostructures having reduced dislocation pile-ups and related methodsTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Nov 9, 2010·26 cites·16 claims
- 0395US6730551B2Formation of planar strained layersMASSACHUSETTS INST TECHNOLOGY·Filed 2002·Granted May 4, 2004·93 cites·23 claims
- 0493US7566606B2Methods of fabricating semiconductor devices having strained dual channel layersAMBERWAVE SYSTEMS CORP·Filed 2006·Granted Jul 28, 2009·19 cites·16 claims
- 0593US7138310B2Semiconductor devices having strained dual channel layersAMBERWAVE SYSTEMS CORP·Filed 2003·Granted Nov 21, 2006·60 cites·13 claims
- 0682US8076569B2Method and structure, using flexible membrane surfaces, for setting and/or maintaining a uniform micron/sub-micron gap separation between juxtaposed photosensitive and heat-supplying surfaces of photovoltaic chips and the like for the generation of electrical powerGREIFF PAUL·Filed 2008·Granted Dec 13, 2011·6 cites·24 claims
- 0781US8236603B1Polycrystalline semiconductor layers and methods for forming the sameFRITZEMEIER LESLIE G·Filed 2009·Granted Aug 7, 2012·7 cites·18 claims
- 0881US8129747B2Semiconductor heterostructures having reduced dislocation pile-ups and related methodsWESTHOFF RICHARD·Filed 2010·Granted Mar 6, 2012·4 cites·17 claims
- 0977US6916727B2Enhancement of P-type metal-oxide-semiconductor field effect transistorsMASSACHUSETTS INST TECHNOLOGY·Filed 2002·Granted Jul 12, 2005·20 cites·47 claims
- 1074US8823056B2Semiconductor heterostructures having reduced dislocation pile-ups and related methodsLEITZ CHRISTOPHER·Filed 2012·Granted Sep 2, 2014·2 cites·18 claims
- 1174US7375385B2Semiconductor heterostructures having reduced dislocation pile-upsAMBERWAVE SYSTEMS CORP·Filed 2003·Granted May 20, 2008·9 cites·58 claims
- 1273US7301180B2Structure and method for a high-speed semiconductor device having a Ge channel layerMASSACHUSETTS INST TECHNOLOGY·Filed 2002·Granted Nov 27, 2007·15 cites·17 claims
- 1372US8822813B2Submicron gap thermophotovoltaic structure and methodMTPV POWER CORP·Filed 2012·Granted Sep 2, 2014·2 cites·23 claims
- 1471US7332417B2Semiconductor structures with structural homogeneityAMBERWAVE SYSTEMS CORP·Filed 2004·Granted Feb 19, 2008·13 cites·34 claims
- 1568US10825950B2Semiconductor surface passivationMASSACHUSETTS INST TECHNOLOGY·Filed 2019·Granted Nov 3, 2020·1 cites·17 claims
- 1668US7494881B2Methods for selective placement of dislocation arraysAMBERWAVE SYSTEMS CORP·Filed 2007·Granted Feb 24, 2009·2 cites·24 claims
- 1767US7141820B2Structures with planar strained layersMASSACHUSETTS INST TECHNOLOGY·Filed 2004·Granted Nov 28, 2006·10 cites·34 claims
- 1866US8633373B2Sub-micrometer gap thermophotovoltaic structure (MTPV) and fabrication method thereforGREIFF PAUL·Filed 2008·Granted Jan 21, 2014·3 cites·26 claims
- 1963US9309607B2Semiconductor heterostructures having reduced dislocation pile-ups and related methodsTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Apr 12, 2016·0 cites·20 claims
- 2062US9934964B2Semiconductor heterostructures having reduced dislocation pile-ups and related methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Apr 3, 2018·0 cites·20 claims
- 2162US8450598B2Method and structure for providing a uniform micron/sub-micron gap separation within micro-gap thermophotovoltaic devices for the generation of electrical powerGREIFF PAUL·Filed 2011·Granted May 28, 2013·0 cites·24 claims
- 2261US9349891B2Submicron gap thermophotovoltaic structure and fabrication methodMTPV POWER CORP·Filed 2014·Granted May 24, 2016·0 cites·36 claims
- 2355US7368308B2Methods of fabricating semiconductor heterostructuresAMBERWAVE SYSTEMS CORP·Filed 2005·Granted May 6, 2008·0 cites·25 claims
- 2453US2008135830A1Semiconductor structures with structural homogeneityAMBERWAVE SYSTEMS CORP·Filed 2007·Application pending·0 cites
- 2549US11372119B2Rapid prototyping of single-photon-sensitive silicon avalanche photodiodesMASSACHUSETTS INST TECHNOLOGY·Filed 2020·Granted Jun 28, 2022·0 cites·18 claims
- 2647US2007072354A1Structures with planar strained layersMASSACHUSETTS INST TECHNOLOGY·Filed 2006·Application pending·0 cites
- 2745US2010270653A1Crystalline thin-film photovoltaic structures and methods for forming the sameLEITZ CHRISTOPHER·Filed 2010·Application pending·0 cites
- 2843US8436336B2Structure and method for a high-speed semiconductor device having a Ge channel layerLEE MINJOO L·Filed 2007·Granted May 7, 2013·0 cites·18 claims
- 2943US2005151164A1Enhancement of p-type metal-oxide-semiconductor field effect transistorsAMBERWAVE SYSTEMS CORP·Filed 2005·Application pending·0 cites
- 3042US2004115916A1Selective placement of dislocation arraysAMBERWAVE SYSTEMS CORP·Filed 2003·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →