Inventor · disambiguated record
Hee-Seog Jeon
Also filed as: JEON HEE-SEOG
54 granted patents·17 pending applications·248 citations·filing 1996–2014
98Inventor score
Top patents by PatentIndex Score
71 records- 0189US7339232B2Semiconductor device having multi-bit nonvolatile memory cell and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Mar 4, 2008·15 cites·22 claims
- 0287US7271061B2Method of fabricating non-volatile memorySAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Sep 18, 2007·14 cites·35 claims
- 0386US7492002B2Non-volatile memory device with a select gate electrode and a control gate electrode formed on a floating gateSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Feb 17, 2009·10 cites·13 claims
- 0485US7928492B2Non-volatile memory integrated circuit device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Apr 19, 2011·10 cites·21 claims
- 0582US7315057B2Split gate non-volatile memory devices and methods of forming sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jan 1, 2008·10 cites·17 claims
- 0682US7176085B2Method of manufacturing split gate type nonvolatile memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Feb 13, 2007·7 cites·7 claims
- 0781US7768061B2Self aligned 1 bit local SONOS memory cellSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Aug 3, 2010·6 cites·21 claims
- 0880US9082865B2Split-gate type nonvolatile memory device, semiconductor device having split-type nonvolatile memory device embedded therein, and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Jul 14, 2015·7 cites·16 claims
- 0980US7697336B2Non-volatile memory device and method of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Apr 13, 2010·7 cites·17 claims
- 1078US7553725B2Nonvolatile memory devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jun 30, 2009·8 cites·28 claims
- 1178US7078295B2Self-aligned split-gate nonvolatile memory structure and a method of making the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jul 18, 2006·20 cites·26 claims
- 1277US7557404B2Nonvolatile memory devices and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jul 7, 2009·6 cites·12 claims
- 1375US7602008B2Split gate non-volatile memory devices and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Oct 13, 2009·6 cites·10 claims
- 1472US8432742B2Non-volatile memory device, system, and cell arrayJEONG CHANG-MIN·Filed 2011·Granted Apr 30, 2013·6 cites·15 claims
- 1572US7462533B2Memory cell and method for fabricating sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Dec 9, 2008·4 cites·12 claims
- 1670US8059473B2Non-volatile memory deviceJEON HEE-SEOG·Filed 2010·Granted Nov 15, 2011·3 cites·9 claims
- 1770US7422949B2High voltage transistor and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Sep 9, 2008·3 cites·10 claims
- 1868US7521750B2Semiconductor device having multi-bit nonvolatile memory cell and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Apr 21, 2009·3 cites·23 claims
- 1966US7791951B2Methods of operating non-volatile memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Sep 7, 2010·2 cites·13 claims
- 2066US7512003B2Non-volatile memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Mar 31, 2009·6 cites·11 claims
- 2166US7148110B2Local-length nitride SONOS device having self-aligned ONO structure and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Dec 12, 2006·3 cites·19 claims
- 2265US7238572B2Method of manufacturing EEPROM cellSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jul 3, 2007·3 cites·17 claims
- 2365US7064378B2Local-length nitride SONOS device having self-aligned ONO structure and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jun 20, 2006·11 cites·27 claims
- 2464US8053342B2Mask ROM device, semiconductor device including the mask ROM device, and methods of fabricating mask ROM device and semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted Nov 8, 2011·1 cites·7 claims
- 2564US6255716B1Bipolar junction transistors having base electrode extensionsSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Jul 3, 2001·10 cites·4 claims
- 2663US8111553B2Non-volatile semiconductor memory device in which program disturb is reduced and method of programming the sameSEO BO-YOUNG·Filed 2010·Granted Feb 7, 2012·3 cites·10 claims
- 2763US7015541B2Memory cell including stacked gate sidewall patterns and method for fabricating sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Mar 21, 2006·9 cites·15 claims
- 2862US7733696B2Non-volatile memory devices including local control gates on multiple isolated well regions and related methods and systemsSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jun 8, 2010·5 cites·10 claims
- 2961US9330745B2Magnetic memory devices including magnetic memory cells having opposite magnetization directionsSEO BO-YOUNG·Filed 2014·Granted May 3, 2016·2 cites·18 claims
- 3061US7351636B2Methods of forming split-gate non-volatile memory cells including raised oxide layers on field oxide regionsSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Apr 1, 2008·2 cites·13 claims
- 3161US7320913B2Methods of forming split-gate non-volatile memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jan 22, 2008·2 cites·7 claims
- 3260US8698239B2Semiconductor devices having asymmetric doped regions and methods of fabricating the sameRYU JI-DO·Filed 2012·Granted Apr 15, 2014·2 cites·15 claims
- 3360US7037783B2Method of manufacturing split gate type nonvolatile memory device having self-aligned spacer type control gateSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted May 2, 2006·6 cites·11 claims
- 3458US8110873B2High voltage transistorCHOI SUNG-GON·Filed 2008·Granted Feb 7, 2012·3 cites·18 claims
- 3558US7800158B2Semiconductor device and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Sep 21, 2010·1 cites·16 claims
- 3658US7586146B2Non-volatile memory and method of fabricating sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Sep 8, 2009·1 cites·15 claims
- 3758US7492000B2Self-aligned split-gate nonvolatile memory structure and a method of making the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Feb 17, 2009·1 cites·12 claims
- 3858US7345336B2Semiconductor memory device having self-aligned charge trapping layerSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Mar 18, 2008·7 cites·17 claims
- 3958US7141473B2Self-aligned 1 bit local SONOS memory cell and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Nov 28, 2006·5 cites·14 claims
- 4057US7799635B2Methods of forming nonvolatile memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Sep 21, 2010·1 cites·10 claims
- 4156US7696561B2Non-volatile memory device, method of manufacturing the same and method of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Apr 13, 2010·1 cites·18 claims
- 4256US7515468B2Nonvolatile memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Apr 7, 2009·3 cites·19 claims
- 4356US7221028B2High voltage transistor and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted May 22, 2007·5 cites·10 claims
- 4455US7777256B2Mask ROM device, semiconductor device including the mask ROM device, and methods of fabricating mask ROM device and semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Aug 17, 2010·0 cites·13 claims
- 4554US9318181B2Magnetic memory devices including shared linesSEO BO-YOUNG·Filed 2014·Granted Apr 19, 2016·1 cites·10 claims
- 4653US7638387B2Mask ROM and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Dec 29, 2009·0 cites·20 claims
- 4753US2009011589A1Method of manufacturing split gate type nonvolatile memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
- 4852US7944753B2Electrically erasable programmable read-only memory (EEPROM) cell and methods for forming and reading the sameSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted May 17, 2011·1 cites·8 claims
- 4952US2010059888A1Mask ROM and method of fabricating the sameLEE YONG-KYU·Filed 2009·Application pending·0 cites
- 5051US2009189210A1Semiconductor Flash Memory Device and Method of Fabricating the SameCHOI YONG-SUK·Filed 2009·Application pending·0 cites
Showing the top 50 of 71 patent records by PatentIndex Score.
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