Inventor · disambiguated record
Sung-Nam Chang
Also filed as: CHANG SUNG-IL · CHANG SUNG-NAM
20 granted patents·5 pending applications·292 citations·filing 1991–2011
95Inventor score
Files withSAMSUNG ELECTRONICS CO LTD22KANG DAE-WOONG1KOREA ADVANCED INST SCI & TECH1SAMSUNG ELECTRONICW CO LTD1
Top patents by PatentIndex Score
25 records- 0195US8362542B2Semiconductor devices comprising a plurality of gate structuresSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted Jan 29, 2013·35 cites·13 claims
- 0293US6380032B1Flash memory device and method of making sameSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Apr 30, 2002·63 cites·13 claims
- 0388US6624464B2Highly integrated non-volatile memory cell array having a high program speedSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Sep 23, 2003·38 cites·8 claims
- 0488US6515329B2Flash memory device and method of making sameSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Feb 4, 2003·33 cites·5 claims
- 0579US7598564B2Non-volatile memory devices and methods of forming non-volatile memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Oct 6, 2009·9 cites·7 claims
- 0678US8436410B2Semiconductor devices comprising a plurality of gate structuresKANG DAE-WOONG·Filed 2011·Granted May 7, 2013·8 cites·17 claims
- 0776US7700426B2Nonvolatile memory device and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Apr 20, 2010·7 cites·13 claims
- 0876US6482728B2Method for fabricating floating gateSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Nov 19, 2002·17 cites·13 claims
- 0975US7391082B2Semiconductor integrated circuit having resistorSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jun 24, 2008·6 cites·14 claims
- 1075US7061044B2Non-volatile memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jun 13, 2006·17 cites·10 claims
- 1170US7508048B2Methods of fabricating a semiconductor device having multi-gate insulation layers and semiconductor devices fabricated therebySAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Mar 24, 2009·12 cites·8 claims
- 1263US7344944B2Non-volatile memory device and fabricating method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Mar 18, 2008·2 cites·11 claims
- 1362US7666717B2Non-volatile memory devices including fuse covered field regionsSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Feb 23, 2010·2 cites·10 claims
- 1461US5414302ASemiconductor device with a multilayered contact structure having a boro-phosphate silicate glass planarizing layerSAMSUNG ELECTRONICS CO LTD·Filed 1994·Granted May 9, 1995·29 cites·10 claims
- 1552US7736989B2Method of forming semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Jun 15, 2010·1 cites·19 claims
- 1647US2007096202A1Semiconductor device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 1746US6891222B2Non-volatile memory devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted May 10, 2005·2 cites·7 claims
- 1844US7541243B2Methods of forming integrated circuit devices having gate electrodes formed on non-uniformly thick gate insulating layersSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jun 2, 2009·0 cites·9 claims
- 1944US2005164457A1Non-volatile memory devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Application pending·0 cites
- 2042US7132728B2Non-volatile memory devices including fuse covered field regionsSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Nov 7, 2006·0 cites·10 claims
- 2135US5320980AInterconnection structure in semiconductor device and the method thereofSAMSUNG ELECTRONICS CO LTD·Filed 1992·Granted Jun 14, 1994·6 cites·3 claims
- 2235US2004175924A1Semiconductor device having resistor and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Application pending·0 cites
- 2334US2002028546A1Method of fabricating deep submicron MOS transistorKOREA ADVANCED INST SCI & TECH·Filed 2001·Application pending·0 cites
- 2434US2003127682A1Non-volatile memory device having improved coupling ratio uniformitySAMSUNG ELECTRONICS CO LTD·Filed 2002·Application pending·0 cites
- 2529US5285110AInterconnection structure in semiconductor deviceSAMSUNG ELECTRONICW CO LTD·Filed 1991·Granted Feb 8, 1994·5 cites·6 claims
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