Inventor · disambiguated record
Leland Chang
Also filed as: CHANG LELAND
138 granted patents·19 pending applications·2,910 citations·filing 2000–2022
99Inventor score
Top patents by PatentIndex Score
157 records- 0199US8059438B2Content addressable memory array programmed to perform logic operationsCHANG LELAND·Filed 2009·Granted Nov 15, 2011·416 cites·17 claims
- 0299US7465973B2Integrated circuit having gates and active regions forming a regular gratingIBM·Filed 2005·Granted Dec 16, 2008·206 cites·13 claims
- 0399US7402848B2Integrated circuit having gates and active regions forming a regular gratingIBM·Filed 2007·Granted Jul 22, 2008·131 cites·1 claims
- 0498US6413802B1Finfet transistor structures having a double gate channel extending vertically from a substrate and methods of manufactureUNIV CALIFORNIA·Filed 2000·Granted Jul 2, 2002·1.2k cites·28 claims
- 0597US8722472B2Hybrid CMOS nanowire mesh device and FINFET deviceCHANG JOSEPHINE B·Filed 2011·Granted May 13, 2014·40 cites·12 claims
- 0697US8580624B2Nanowire FET and finFET hybrid technologyBANGSARUNTIP SARUNYA·Filed 2011·Granted Nov 12, 2013·36 cites·21 claims
- 0797US8551833B2Double gate planar field effect transistorsCHANG JOSEPHINE B·Filed 2011·Granted Oct 8, 2013·32 cites·17 claims
- 0897US8466012B1Bulk FinFET and SOI FinFET hybrid technologyCHANG JOSEPHINE B·Filed 2012·Granted Jun 18, 2013·40 cites·21 claims
- 0997US7985633B2Embedded DRAM integrated circuits with extremely thin silicon-on-insulator pass transistorsIBM·Filed 2007·Granted Jul 26, 2011·57 cites·5 claims
- 1096US10505456B1Fully integrated multi-phase buck converter with coupled air core inductorsIBM·Filed 2018·Granted Dec 10, 2019·7 cites·15 claims
- 1196US8493093B1Time division multiplexed limited switch dynamic logicCHANG LELAND·Filed 2012·Granted Jul 23, 2013·14 cites·20 claims
- 1296US8018007B2Selective floating body SRAM cellIBM·Filed 2009·Granted Sep 13, 2011·34 cites·13 claims
- 1395US8709888B2Hybrid CMOS nanowire mesh device and PDSOI deviceCHANG JOSEPHINE B·Filed 2011·Granted Apr 29, 2014·23 cites·11 claims
- 1495US8541774B2Hybrid CMOS technology with nanowire devices and double gated planar devicesBANGSARUNTIP SARUNYA·Filed 2012·Granted Sep 24, 2013·18 cites·12 claims
- 1595US8030145B2Back-gated fully depleted SOI transistorIBM·Filed 2010·Granted Oct 4, 2011·23 cites·21 claims
- 1694US8878298B2Multiple Vt field-effect transistor devicesCHANG JOSEPHINE B·Filed 2012·Granted Nov 4, 2014·17 cites·16 claims
- 1794US8809957B2Nanowire FET and FinFET hybrid technologyIBM·Filed 2013·Granted Aug 19, 2014·14 cites·6 claims
- 1894US8110467B2Multiple Vt field-effect transistor devicesCHANG JOSEPHINE B·Filed 2009·Granted Feb 7, 2012·24 cites·11 claims
- 1994US7274072B2Hybrid bulk-SOI 6T-SRAM cell for improved cell stability and performanceIBM·Filed 2005·Granted Sep 25, 2007·33 cites·30 claims
- 2093US9818058B2Time-division multiplexed neurosynaptic module with implicit memory addressing for implementing a universal substrate of adaptationIBM·Filed 2016·Granted Nov 14, 2017·13 cites·15 claims
- 2193US8856055B2Reconfigurable and customizable general-purpose circuits for neural networksBREZZO BERNARD V·Filed 2011·Granted Oct 7, 2014·38 cites·27 claims
- 2293US8716810B2Selective floating body SRAM cellIBM·Filed 2012·Granted May 6, 2014·11 cites·3 claims
- 2393US8138030B2Asymmetric finFET device with improved parasitic resistance and capacitanceCHANG JOSEPHINE B·Filed 2009·Granted Mar 20, 2012·21 cites·11 claims
- 2493US7106620B2Memory cell having improved read stabilityIBM·Filed 2005·Granted Sep 12, 2006·32 cites·21 claims
- 2592US9230989B2Hybrid CMOS nanowire mesh device and FINFET deviceIBM·Filed 2014·Granted Jan 5, 2016·13 cites·18 claims
- 2692US8927312B2Method of fabricating MEMS transistors on far back end of lineIBM·Filed 2012·Granted Jan 6, 2015·10 cites·16 claims
- 2792US8742511B2Double gate planar field effect transistorsIBM·Filed 2013·Granted Jun 3, 2014·9 cites·12 claims
- 2891US8080838B2Contact scheme for FINFET structures with multiple FINsCHANG LELAND·Filed 2009·Granted Dec 20, 2011·18 cites·18 claims
- 2990US9716036B2Electronic device including moat power metallization in trenchGLOBALFOUNDRIES INC·Filed 2015·Granted Jul 25, 2017·6 cites·16 claims
- 3090US7136296B2Static random access memory utilizing gated diode technologyIBM·Filed 2005·Granted Nov 14, 2006·23 cites·24 claims
- 3189US9118242B2Slab inductor device providing efficient on-chip supply voltage conversion and regulationCHANG LELAND·Filed 2012·Granted Aug 25, 2015·6 cites·23 claims
- 3289US8643107B2Body-tied asymmetric N-type field effect transistorSLEIGHT JEFFREY W·Filed 2010·Granted Feb 4, 2014·10 cites·23 claims
- 3389US8216907B2Process to fabricate a metal high-K transistor having first and second silicon sidewalls for reduced parasitic capacitanceCHANG LELAND·Filed 2010·Granted Jul 10, 2012·8 cites·13 claims
- 3488US9373073B2Time-division multiplexed neurosynaptic module with implicit memory addressing for implementing a universal substrate of adaptationIBM·Filed 2012·Granted Jun 21, 2016·20 cites·31 claims
- 3588US7550337B2Dual gate dielectric SRAMIBM·Filed 2007·Granted Jun 23, 2009·15 cites·10 claims
- 3687US8629705B2Low voltage signalingCHANG LELAND·Filed 2010·Granted Jan 14, 2014·9 cites·21 claims
- 3786US8716072B2Hybrid CMOS technology with nanowire devices and double gated planar devicesBANGSARUNTIP SARUNYA·Filed 2011·Granted May 6, 2014·7 cites·10 claims
- 3886US8687398B2Sense scheme for phase change material content addressable memoryCHANG LELAND·Filed 2012·Granted Apr 1, 2014·10 cites·19 claims
- 3985US8604832B1Time division multiplexed limited switch dynamic logicCHANG LELAND·Filed 2012·Granted Dec 10, 2013·4 cites·20 claims
- 4085US7242629B2High speed latch circuits using gated diodesIBM·Filed 2006·Granted Jul 10, 2007·14 cites·15 claims
- 4184US9536885B2Hybrid FINFET/nanowire SRAM cell using selective germanium condensationIBM·Filed 2015·Granted Jan 3, 2017·4 cites·11 claims
- 4284US9368502B2Replacement gate multigate transistor for embedded DRAMCHANG JOSEPHINE B·Filed 2011·Granted Jun 14, 2016·6 cites·7 claims
- 4384US7776732B2Metal high-K transistor having silicon sidewall for reduced parasitic capacitance, and process to fabricate sameIBM·Filed 2007·Granted Aug 17, 2010·8 cites·10 claims
- 4483US10380479B2Acceleration of convolutional neural network training using stochastic perforationIBM·Filed 2015·Granted Aug 13, 2019·5 cites·6 claims
- 4583US9239984B2Time-division multiplexed neurosynaptic module with implicit memory addressing for implementing a neural networkIBM·Filed 2012·Granted Jan 19, 2016·11 cites·20 claims
- 4683US8917547B2Complementary SOI lateral bipolar for SRAM in a CMOS platformIBM·Filed 2013·Granted Dec 23, 2014·7 cites·6 claims
- 4783US8261138B2Test structure for characterizing multi-port static random access memory and register file arraysCHANG LELAND·Filed 2006·Granted Sep 4, 2012·12 cites·12 claims
- 4883US7855135B2Method to reduce parastic capacitance in a metal high dielectric constant (MHK) transistorIBM·Filed 2009·Granted Dec 21, 2010·7 cites·11 claims
- 4983US7843007B2Metal high-k transistor having silicon sidewall for reduced parasitic capacitanceIBM·Filed 2009·Granted Nov 30, 2010·7 cites·12 claims
- 5082US10628732B2Reconfigurable and customizable general-purpose circuits for neural networksIBM·Filed 2016·Granted Apr 21, 2020·3 cites·18 claims
Showing the top 50 of 157 patent records by PatentIndex Score.
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