Inventor · disambiguated record
Hyung-Soon Shin
Also filed as: SHIN HYUNG S · SHIN HYUNG-SOON
15 granted patents·1 pending application·218 citations·filing 1992–2013
93Inventor score
Files withSAMSUNG ELECTRONICS CO LTD7GOLD STAR ELECTRONICS2KIM KWANG SEOK2CHO YOUNG JIN1EWHA University—Industry Collaboration Foundation1
Top patents by PatentIndex Score
16 records- 0193US8194439B2Magnetic random access memories and methods of operating the sameKIM KWANG-SEOK·Filed 2010·Granted Jun 5, 2012·21 cites·31 claims
- 0288US5270257AMethod of making metal oxide semiconductor field effect transistors with a lightly doped drain structure having a recess type gateGOLD STAR ELECTRONICS·Filed 1992·Granted Dec 14, 1993·82 cites·7 claims
- 0382US8320166B2Magnetic random access memory and method of reading data from the samePARK WAN-JUN·Filed 2008·Granted Nov 27, 2012·13 cites·12 claims
- 0478US8045371B2Magnetic storage device having a buffer track and storage tracks, and method of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Oct 25, 2011·3 cites·31 claims
- 0578US7439770B2Magnetic tunneling junction based logic circuits and methods of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Oct 21, 2008·10 cites·25 claims
- 0677US5904530AMethod of making LDD structure spaced from channel doped regionGOLD STAR ELECTRONICS·Filed 1997·Granted May 18, 1999·42 cites·20 claims
- 0774US8144504B2Method of operating magnetic random access memory deviceKIM KWANG-SEOK·Filed 2009·Granted Mar 27, 2012·6 cites·9 claims
- 0874US6924520B2MRAM including unit cell formed of one transistor and two magnetic tunnel junctions (MTJS) and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Aug 2, 2005·17 cites·9 claims
- 0972US7195929B2MRAM including unit cell formed of one transistor and two magnetic tunnel junctions (MTJs) and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Mar 27, 2007·7 cites·21 claims
- 1070US8320152B2Information storage devices using magnetic domain wall movement and methods of operating the sameCHO YOUNG-JIN·Filed 2009·Granted Nov 27, 2012·7 cites·38 claims
- 1164US7755930B2Semiconductor memory device and magneto-logic circuitSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jul 13, 2010·7 cites·17 claims
- 1252US8144503B2Information storage device and method of operating the sameLEE SUNG-CHUL·Filed 2009·Granted Mar 27, 2012·2 cites·23 claims
- 1340US7672154B2Semiconductor memory device and method of programming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Mar 2, 2010·0 cites·17 claims
- 1436US9135959B2Magnetic ramdom access memoryEWHA University—Industry Collaboration Foundation·Filed 2013·Granted Sep 15, 2015·0 cites·15 claims
- 1536US8742855B2Feed-forward ring oscillatorSHIN HYUNG SOON·Filed 2009·Granted Jun 3, 2014·1 cites·3 claims
- 1635US2005180205A1Magnetic random access memory and method of reading data from the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →