Inventor · disambiguated record
Gunda Beernink
Also filed as: BEERNINK GUNDA
11 granted patents·5 pending applications·30 citations·filing 2009–2015
86Inventor score
Files withKRONHOLZ STEPHAN9ADVANCED MICRO DEVICES INC2GLOBALFOUNDRIES INC2KRONHOLZ STEPHAN-DETLEF2JAVORKA PETER1
Top patents by PatentIndex Score
16 records- 0185US8361858B2Reduction of thickness variations of a threshold semiconductor alloy by reducing patterning non-uniformities prior to depositing the semiconductor alloyADVANCED MICRO DEVICES INC·Filed 2010·Granted Jan 29, 2013·9 cites·20 claims
- 0283US9224863B2Performance enhancement in transistors by providing an embedded strain-inducing semiconductor material on the basis of a seed layerJAVORKA PETER·Filed 2012·Granted Dec 29, 2015·6 cites·25 claims
- 0375US8765559B2Sophisticated gate electrode structures formed by cap layer removal with reduced loss of embedded strain-inducing semiconductor materialKRONHOLZ STEPHAN·Filed 2012·Granted Jul 1, 2014·4 cites·20 claims
- 0475US8202777B2Transistor with an embedded strain-inducing material having a gradually shaped configurationKRONHOLZ STEPHAN·Filed 2009·Granted Jun 19, 2012·5 cites·26 claims
- 0572US8338274B2Transistor device comprising an embedded semiconductor alloy having an asymmetric configurationKRONHOLZ STEPHAN·Filed 2009·Granted Dec 25, 2012·3 cites·25 claims
- 0665US8835209B2Complementary transistors comprising high-k metal gate electrode structures and epitaxially formed semiconductor materials in the drain and source areasKRONHOLZ STEPHAN·Filed 2012·Granted Sep 16, 2014·2 cites·24 claims
- 0758US8674458B2Transistors with embedded strain-inducing material formed in cavities provided by an oxidizing etch processKRONHOLZ STEPHAN-DETLEF·Filed 2012·Granted Mar 18, 2014·1 cites·20 claims
- 0852US8518784B2Adjusting of strain caused in a transistor channel by semiconductor material provided for threshold adjustmentKRONHOLZ STEPHAN·Filed 2009·Granted Aug 27, 2013·0 cites·20 claims
- 0949US9484459B2Performance enhancement in transistors by providing an embedded strain-inducing semiconductor material on the basis of a seed layerGLOBALFOUNDRIES INC·Filed 2015·Granted Nov 1, 2016·0 cites·22 claims
- 1049US8466520B2Transistor with an embedded strain-inducing material having a gradually shaped configurationKRONHOLZ STEPHAN·Filed 2012·Granted Jun 18, 2013·0 cites·7 claims
- 1147US2013307090A1Adjusting of strain caused in a transistor channel by semiconductor material provided for the threshold adjustmentGLOBALFOUNDRIES INC·Filed 2013·Application pending·0 cites
- 1244US2013161695A1Reduction of thickness variations of a threshold semiconductor alloy by reducing patterning non-uniformities prior to depositing the semiconductor alloyADVANCED MICRO DEVICES INC·Filed 2012·Application pending·0 cites
- 1339US2012025315A1Transistor with Embedded Strain-Inducing Material and Dummy Gate Electrodes Positioned Adjacent to the Active RegionKRONHOLZ STEPHAN·Filed 2011·Application pending·0 cites
- 1437US2012153354A1Performance enhancement in transistors comprising high-k metal gate stacks and an embedded stressor by performing a second epitaxy stepKRONHOLZ STEPHAN·Filed 2011·Application pending·0 cites
- 1536US8614122B2Formation of a channel semiconductor alloy by forming a hard mask layer stack and applying a plasma-based mask patterning processKRONHOLZ STEPHAN-DETLEF·Filed 2011·Granted Dec 24, 2013·0 cites·20 claims
- 1635US2012153350A1Semiconductor devices and methods for fabricating the sameKRONHOLZ STEPHAN·Filed 2010·Application pending·0 cites
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