Inventor · disambiguated record
Chia-Ling Yeh
Also filed as: YEH CHIA L · YEH CHIA-LING
9 granted patents·4 pending applications·32 citations·filing 1989–2024
82Inventor score
Top patents by PatentIndex Score
13 records- 0182US11804374B2Strain relief trenches for epitaxial growthTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 31, 2023·1 cites·20 claims
- 0281US11855199B2High Electron Mobility Transistor (HEMT) with a back barrier layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 26, 2023·1 cites·20 claims
- 0378US2024387719A1Barrier structure configured to increase performance of iii-v devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0473US12419074B2Barrier structure configured to increase performance of III-V devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 16, 2025·0 cites·20 claims
- 0573US10068976B2Enhancement mode field-effect transistor with a gate dielectric layer recessed on a composite barrier layer for high static performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Sep 4, 2018·2 cites·20 claims
- 0673US2024088284A1High electron mobility transistor (hemt) with a back barrier layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 0771US4926267AReproduction of halftone original with reduced moireNYNEX CORP·Filed 1989·Granted May 15, 1990·26 cites·38 claims
- 0869US2023377881A1Strain relief trenches for epitaxial growthTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 0968US2022384630A1High electron mobility transistor (hemt) with a back barrier layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 1067US11715792B2Barrier structure configured to increase performance of III-V devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 1, 2023·0 cites·20 claims
- 1165US11522067B2High electron mobility transistor (HEMT) device and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 6, 2022·0 cites·20 claims
- 1262US9445176B1Earpiece apparatus for in-ear headphonesYEH CHIA-LING·Filed 2015·Granted Sep 13, 2016·2 cites·6 claims
- 1358US11011614B2High electron mobility transistor (HEMT) device and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 18, 2021·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →