Inventor · disambiguated record
Sandeep R. Bahl
Also filed as: BAHL SANDEEP · BAHL SANDEEP R · BAHL SANDEEP RAJ
37 granted patents·10 pending applications·345 citations·filing 2000–2023
97Inventor score
Files withTEXAS INSTRUMENTS INC13BAHL SANDEEP R7NAT SEMICONDUCTOR CORP7AGILENT TECHNOLOGIES INC4BAHL SANDEEP4
Top patents by PatentIndex Score
47 records- 0197US8163619B2Fabrication of semiconductor structure having asymmetric field-effect transistor with tailored pocket portion along source/drain zoneYANG JENG-JIUN·Filed 2009·Granted Apr 24, 2012·121 cites·46 claims
- 0296US10270239B2Overvoltage protection and short-circuit withstanding for gallium nitride devicesTEXAS INSTRUMENTS INC·Filed 2016·Granted Apr 23, 2019·8 cites·19 claims
- 0392US11088534B2Overvoltage protection and short-circuit withstanding for gallium nitride devicesTEXAS INSTRUMENTS INC·Filed 2019·Granted Aug 10, 2021·7 cites·18 claims
- 0491US8101479B2Fabrication of asymmetric field-effect transistors using L-shaped spacersPARKER D COURTNEY·Filed 2009·Granted Jan 24, 2012·32 cites·44 claims
- 0591US7307327B2Reduced crosstalk CMOS image sensorsMICRON TECHNOLOGY INC·Filed 2005·Granted Dec 11, 2007·51 cites·25 claims
- 0690US11356087B2Method and circuitry for controlling a depletion-mode transistorTEXAS INSTRUMENTS INC·Filed 2021·Granted Jun 7, 2022·2 cites·40 claims
- 0788US10094863B2High-resolution power electronics measurementsTEXAS INSTRUMENTS INC·Filed 2016·Granted Oct 9, 2018·7 cites·25 claims
- 0887US8735980B2Configuration and fabrication of semiconductor structure using empty and filled wellsNAT SEMICONDUCTOR CORP·Filed 2012·Granted May 27, 2014·7 cites·18 claims
- 0987US7608471B2Method and apparatus for integrating III-V semiconductor devices into silicon processesAVAGO TECHNOLOGIES GENERAL IP·Filed 2005·Granted Oct 27, 2009·12 cites·5 claims
- 1084US8304835B2Configuration and fabrication of semiconductor structure using empty and filled wellsBULUCEA CONSTANTIN·Filed 2009·Granted Nov 6, 2012·8 cites·82 claims
- 1182US8415752B2Configuration and fabrication of semiconductor structure having asymmetric field-effect transistor with tailored pocket portion along source/drain zoneYANG JENG-JIUN·Filed 2012·Granted Apr 9, 2013·5 cites·30 claims
- 1282US8410549B2Structure and fabrication of field-effect transistor using empty well in combination with source/drain extensions or/and halo pocketBULUCEA CONSTANTIN·Filed 2009·Granted Apr 2, 2013·8 cites·20 claims
- 1382US7592654B2Reduced crosstalk CMOS image sensorsAPTINA IMAGING CORP·Filed 2007·Granted Sep 22, 2009·9 cites·16 claims
- 1479US8629027B1Structure and fabrication of asymmetric field-effect transistor having asymmetric channel zone and differently configured source/drain extensionsBULUCEA CONSTANTIN·Filed 2011·Granted Jan 14, 2014·4 cites·34 claims
- 1579US8513703B2Group III-nitride HEMT with multi-layered substrate having a second layer of one conductivity type touching a top surface of a first layers of different conductivity type and a method for forming the sameBAHL SANDEEP·Filed 2010·Granted Aug 20, 2013·6 cites·12 claims
- 1679US7973372B2Semiconductor structure in which source and drain extensions of field-effect transistor are defined with different dopantsNAT SEMICONDUCTOR CORP·Filed 2009·Granted Jul 5, 2011·5 cites·32 claims
- 1778US9762230B2Method and circuitry for controlling a depletion-mode transistorTEXAS INSTRUMENTS INC·Filed 2014·Granted Sep 12, 2017·3 cites·21 claims
- 1876US7247885B2Carrier confinement in light-emitting group IV semiconductor devicesAVAGO TECHNOLOGIES GENERAL IP·Filed 2005·Granted Jul 24, 2007·7 cites·25 claims
- 1975US7968921B2Asymmetric field-effect transistor having asymmetric channel zone and differently configured source/drain extensionsNAT SEMICONDUCTOR CORP·Filed 2009·Granted Jun 28, 2011·4 cites·20 claims
- 2074US11227805B2System and method for surge-testing a gallium nitride transistor deviceTEXAS INSTRUMENTS INC·Filed 2019·Granted Jan 18, 2022·1 cites·23 claims
- 2173US7294848B2Light-emitting Group IV semiconductor devicesAVAGO TECHNOLOGIES GENERAL IP·Filed 2005·Granted Nov 13, 2007·5 cites·36 claims
- 2271US8084827B2Structure and fabrication of like-polarity field-effect transistors having different configurations of source/drain extensions, halo pockets, and gate dielectric thicknessesBULUCEA CONSTANTIN·Filed 2009·Granted Dec 27, 2011·3 cites·38 claims
- 2369US8723226B2Manufacturable enhancement-mode group III-N HEMT with a reverse polarization capBAHL SANDEEP·Filed 2011·Granted May 13, 2014·3 cites·6 claims
- 2468US9064928B2Growth of multi-layer group III-nitride buffers on large-area silicon substrates and other substratesNAT SEMICONDUCTOR CORP·Filed 2013·Granted Jun 23, 2015·1 cites·6 claims
- 2564US9991225B2High voltage device with multi-electrode controlTEXAS INSTRUMENTS INC·Filed 2015·Granted Jun 5, 2018·1 cites·14 claims
- 2663US8304320B2Configuration and fabrication of semiconductor structure in which source and drain extensions of field-effect transistor are defined with different dopantsBAHL SANDEEP R·Filed 2011·Granted Nov 6, 2012·1 cites·27 claims
- 2759US6583044B2Buried channel in a substrate and method of making sameAGILENT TECHNOLOGIES INC·Filed 2001·Granted Jun 24, 2003·8 cites·20 claims
- 2858US9082817B2Growth of multi-layer group III-nitride buffers on large-area silicon substrates and other substratesNAT SEMICONDUCTOR CORP·Filed 2013·Granted Jul 14, 2015·0 cites·9 claims
- 2958US8946780B2Ohmic contact schemes for group III-V devices having a two-dimensional electron gas layerBAHL SANDEEP R·Filed 2011·Granted Feb 3, 2015·1 cites·12 claims
- 3056US2019094276A1High-resolution power electronics measurementsTEXAS INSTRUMENTS INC·Filed 2018·Application pending·0 cites
- 3155US10340252B2High voltage device with multi-electrode controlTEXAS INSTRUMENTS INC·Filed 2018·Granted Jul 2, 2019·0 cites·15 claims
- 3255US2025107131A1Gate structure of semiconductor deviceTEXAS INSTRUMENTS INC·Filed 2023·Application pending·0 cites
- 3354US6768141B2Heterojunction bipolar transistor (HBT) having improved emitter-base grading structureAGILENT TECHNOLOGIES INC·Filed 2002·Granted Jul 27, 2004·6 cites·16 claims
- 3453US6586113B1Etching heterojunction interfacesAGILENT TECHNOLOGIES INC·Filed 2000·Granted Jul 1, 2003·5 cites·22 claims
- 3552US2018006640A1Method and circuitry for controlling a depletion-mode transistorTEXAS INSTRUMENTS INC·Filed 2017·Application pending·0 cites
- 3650US8592292B2Growth of multi-layer group III-nitride buffers on large-area silicon substrates and other substratesBAHL SANDEEP R·Filed 2010·Granted Nov 26, 2013·0 cites·1 claims
- 3750US6992337B2Gallium arsenide antimonide (GaAsSB)/indium phosphide (InP) heterojunction bipolar transistor (HBT) having reduced tunneling probabilityAGILENT TECHNOLOGIES INC·Filed 2004·Granted Jan 31, 2006·4 cites·13 claims
- 3849US2024047529A1Gan devices with modified heterojunction structure and methods of making thereofTEXAS INSTRUMENTS INC·Filed 2022·Application pending·0 cites
- 3948US8377768B2Structure and fabrication of like-polarity field-effect transistors having different configurations of source/drain extensions, halo pockets, and gate dielectric thicknessesNAT SEMICONDUCTOR CORP·Filed 2011·Granted Feb 19, 2013·0 cites·22 claims
- 4047US2011108926A1Gated anti-fuse in CMOS processNAT SEMICONDUCTOR CORP·Filed 2009·Application pending·0 cites
- 4147US2010244152A1Configuration and fabrication of semiconductor structure having extended-drain field-effect transistorBAHL SANDEEP R·Filed 2009·Application pending·0 cites
- 4243US2014374766A1Bi-directional gallium nitride switch with self-managed substrate biasTEXAS INSTRUMENTS INC·Filed 2013·Application pending·0 cites
- 4343US2007052049A1Integrated opto-electric SPR sensorBAHL SANDEEP R·Filed 2005·Application pending·0 cites
- 4439US8318563B2Growth of group III nitride-based structures and integration with conventional CMOS processing toolsBAHL SANDEEP R·Filed 2010·Granted Nov 27, 2012·0 cites·17 claims
- 4537US8502273B2Group III-nitride HEMT having a well region formed on the surface of substrate and contacted the buffer layer to increase breakdown voltage and the method for forming the sameBAHL SANDEEP·Filed 2010·Granted Aug 6, 2013·0 cites·20 claims
- 4635US2012139013A1Static induction transistor with dielectric carrier separation layerBAHL SANDEEP·Filed 2010·Application pending·0 cites
- 4735US2012280281A1Gallium nitride or other group iii/v-based schottky diodes with improved operating characteristicsBAHL SANDEEP R·Filed 2011·Application pending·0 cites
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →