Assignee

BAHL SANDEEP

US·3 granted patents·1 pending application·9 citations·filing 2010–2011

Technology mixH10D4

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4 records

0179US8513703B2Group III-nitride HEMT with multi-layered substrate having a second layer of one conductivity type touching a top surface of a first layers of different conductivity type and a method for forming the sameBAHL SANDEEP·Filed 2010·Granted Aug 20, 2013·6 cites·12 claims
0269US8723226B2Manufacturable enhancement-mode group III-N HEMT with a reverse polarization capBAHL SANDEEP·Filed 2011·Granted May 13, 2014·3 cites·6 claims
0337US8502273B2Group III-nitride HEMT having a well region formed on the surface of substrate and contacted the buffer layer to increase breakdown voltage and the method for forming the sameBAHL SANDEEP·Filed 2010·Granted Aug 6, 2013·0 cites·20 claims
0435US2012139013A1Static induction transistor with dielectric carrier separation layerBAHL SANDEEP·Filed 2010·Application pending·0 cites

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