Inventor · disambiguated record
Noriyuki Sakudo
Also filed as: SAKUDO NORIYUKI
20 granted patents·1 pending application·535 citations·filing 1976–2005
96Inventor score
Files withHITACHI LTD17AGENCY IND SCIENCE TECHN1APPLIED MATERIALS INC1PANASONIC CORP1SHIBUYA KOGYO CO LTD1
Top patents by PatentIndex Score
21 records- 0196US4543465AMicrowave plasma source having improved switching operation from plasma ignition phase to normal ion extraction phaseHITACHI LTD·Filed 1983·Granted Sep 24, 1985·108 cites·11 claims
- 0293US4433228AMicrowave plasma sourceHITACHI LTD·Filed 1981·Granted Feb 21, 1984·43 cites·20 claims
- 0391US5053678AMicrowave ion sourceHITACHI LTD·Filed 1989·Granted Oct 1, 1991·48 cites·6 claims
- 0491US4101411APlasma etching apparatusHITACHI LTD·Filed 1977·Granted Jul 18, 1978·33 cites·7 claims
- 0589US4393333AMicrowave plasma ion sourceHITACHI LTD·Filed 1980·Granted Jul 12, 1983·38 cites·6 claims
- 0687US4409520AMicrowave discharge ion sourceHITACHI LTD·Filed 1981·Granted Oct 11, 1983·29 cites·8 claims
- 0785US4058748AMicrowave discharge ion sourceHITACHI LTD·Filed 1976·Granted Nov 15, 1977·23 cites·13 claims
- 0883US4658143AIon sourceHITACHI LTD·Filed 1985·Granted Apr 14, 1987·29 cites·33 claims
- 0982US4633138AIon implanterHITACHI LTD·Filed 1985·Granted Dec 30, 1986·43 cites·4 claims
- 1079US5266146AMicrowave-powered plasma-generating apparatus and methodHITACHI LTD·Filed 1991·Granted Nov 30, 1993·35 cites·8 claims
- 1176US4801847ACharged particle accelerator using quadrupole electrodesHITACHI LTD·Filed 1984·Granted Jan 31, 1989·26 cites·8 claims
- 1276US4316090AMicrowave plasma ion sourceHITACHI LTD·Filed 1980·Granted Feb 16, 1982·17 cites·8 claims
- 1375US7557364B2Charge neutralizing devicePANASONIC CORP·Filed 2005·Granted Jul 7, 2009·4 cites·22 claims
- 1474US5086256AExternal resonance circuit type radio frequency quadrupole acceleratorAGENCY IND SCIENCE TECHN·Filed 1989·Granted Feb 4, 1992·18 cites·8 claims
- 1559US4577396AMethod of forming electrical contact to a semiconductor substrate via a metallic silicide or silicon alloy layer formed in the substrateHITACHI LTD·Filed 1984·Granted Mar 25, 1986·21 cites·30 claims
- 1655US7166965B2Waveguide and microwave ion source equipped with the waveguideAPPLIED MATERIALS INC·Filed 2003·Granted Jan 23, 2007·2 cites·9 claims
- 1751US5349196AIon implanting apparatusHITACHI LTD·Filed 1993·Granted Sep 20, 1994·9 cites·7 claims
- 1840US4629930APlasma ion sourceHITACHI LTD·Filed 1983·Granted Dec 16, 1986·4 cites·5 claims
- 1934US5506472AVariable-frequency type radio-frequency quadrupole accelerator including quadrupole cooling meansHITACHI LTD·Filed 1994·Granted Apr 9, 1996·4 cites·8 claims
- 2031US4924101ACharged particle sourceHITACHI LTD·Filed 1988·Granted May 8, 1990·1 cites·8 claims
- 2131US2002117114A1Method and apparatus for modifying surface of container made of polymeric compoundSHIBUYA KOGYO CO LTD·Filed 2002·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →