Inventor · disambiguated record
Kohei Sasaki
Also filed as: SASAKI KOHEI
35 granted patents·18 pending applications·68 citations·filing 2012–2025
95Inventor score
Top patents by PatentIndex Score
53 records- 0193US10249767B2Ga2O3-based semiconductor elementTAMURA SEISAKUSHO KK·Filed 2016·Granted Apr 2, 2019·9 cites·19 claims
- 0292US9461124B2Ga2O3 semiconductor elementSASAKI KOHEI·Filed 2012·Granted Oct 4, 2016·15 cites·14 claims
- 0390US9437689B2Ga2O3 semiconductor elementSASAKI KOHEI·Filed 2012·Granted Sep 6, 2016·10 cites·17 claims
- 0488US10161058B2Ga2O3-based single crystal substrate, and production method thereforTAMURA SEISAKUSHO KK·Filed 2014·Granted Dec 25, 2018·2 cites·4 claims
- 0586US11355594B2DiodeTAMURA SEISAKUSHO KK·Filed 2018·Granted Jun 7, 2022·4 cites·6 claims
- 0684US10230007B2Semiconductor element, method for manufacturing same, semiconductor substrate, and crystal laminate structureTAMURA SEISAKUSHO KK·Filed 2015·Granted Mar 12, 2019·4 cites·7 claims
- 0784US9716004B2Crystal laminate structure and method for producing sameSASAKI KOHEI·Filed 2012·Granted Jul 25, 2017·6 cites·12 claims
- 0883US9245749B2Method of forming Ga2O3-based crystal film and crystal multilayer structureTAMURA SEISAKUSHO KK·Filed 2014·Granted Jan 26, 2016·5 cites·4 claims
- 0981US9142623B2Substrate for epitaxial growth, and crystal laminate structureSASAKI KOHEI·Filed 2012·Granted Sep 22, 2015·4 cites·9 claims
- 1076US10358742B2Ga2O3-based crystal film, and crystal multilayer structureTAMURA SEISAKUSHO KK·Filed 2017·Granted Jul 23, 2019·2 cites·7 claims
- 1175US12104276B2Ga2O3-based single crystal substrateTAMURA SEISAKUSHO KK·Filed 2021·Granted Oct 1, 2024·0 cites·2 claims
- 1275US10633761B2GA2O3-based single crystal substrate, and production method thereforTAMURA SEISAKUSHO KK·Filed 2018·Granted Apr 28, 2020·0 cites·4 claims
- 1374US10861945B2Semiconductor element and crystalline laminate structureTAMURA SEISAKUSHO KK·Filed 2015·Granted Dec 8, 2020·2 cites·7 claims
- 1470US12087856B2Field effect transistorTAMURA SEISAKUSHO KK·Filed 2023·Granted Sep 10, 2024·0 cites·6 claims
- 1570US11081598B2Trench MOS Schottky diodeTAMURA SEISAKUSHO KK·Filed 2018·Granted Aug 3, 2021·1 cites·12 claims
- 1668US9685515B2Substrate for epitaxial growth, and crystal laminate structureTAMURA SEISAKUSHO KK·Filed 2015·Granted Jun 20, 2017·1 cites·13 claims
- 1768US2025257279A1Lubricating oil composition for internal combustion engineENEOS CORP·Filed 2025·Application pending·0 cites
- 1867US10199512B2High voltage withstand Ga2O3-based single crystal schottky barrier diodeTAMURA SEISAKUSHO KK·Filed 2016·Granted Feb 5, 2019·1 cites·12 claims
- 1965US11982016B2Method for growing beta-Ga2O3-based single crystal film, and crystalline layered structureTAMURA SEISAKUSHO KK·Filed 2021·Granted May 14, 2024·0 cites·5 claims
- 2065US11563092B2GA2O3-based semiconductor deviceNAT INST INF & COMM TECH·Filed 2018·Granted Jan 24, 2023·1 cites·2 claims
- 2164US11043602B2Schottky barrier diodeTAMURA SEISAKUSHO KK·Filed 2018·Granted Jun 22, 2021·1 cites·3 claims
- 2262US2023183591A1Lubricating oil composition for internal combustion engineENEOS CORP·Filed 2022·Application pending·0 cites
- 2361US2024120573A1Cooling structure between battery cells, battery module, and, battery packNIPPON STEEL CORP·Filed 2022·Application pending·0 cites
- 2459US2017233892A1Ga2O3-BASED SINGLE CRYSTAL SUBSTRATETAMURA SEISAKUSHO KK·Filed 2015·Application pending·0 cites
- 2556US11616138B2Field effect transistorTAMURA SEISAKUSHO KK·Filed 2018·Granted Mar 28, 2023·0 cites·8 claims
- 2656US2018350967A1Ga2O3 SEMICONDUCTOR ELEMENTTAMURA SEISAKUSHO KK·Filed 2018·Application pending·0 cites
- 2755US12482729B2Semiconductor deviceTAMURA SEISAKUSHO KK·Filed 2020·Granted Nov 25, 2025·0 cites·13 claims
- 2855US2025091704A1Outboard motorHONDA MOTOR CO LTD·Filed 2023·Application pending·0 cites
- 2954US2024355621A1Semiconductor substrate, semiconductor wafer, and method for manufacturing semiconductor waferTAMURA SEISAKUSHO KK·Filed 2022·Application pending·0 cites
- 3054US2016265137A1METHOD FOR GROWING BETA-Ga2O3-BASED SINGLE CRYSTAL FILM, AND CRYSTALLINE LAYERED STRUCTURETAMURA SEISAKUSHO KK·Filed 2014·Application pending·0 cites
- 3153US11557681B2Schottky barrier diodeTDK CORP·Filed 2019·Granted Jan 17, 2023·0 cites·18 claims
- 3252US11621357B2Schottky barrier diodeTDK CORP·Filed 2019·Granted Apr 4, 2023·0 cites·16 claims
- 3352US9202876B2Method for controlling concentration of donor in GA2O3-based single crystalTAMURA SEISAKUSHO KK·Filed 2015·Granted Dec 1, 2015·0 cites·15 claims
- 3452US8951897B2Method for controlling concentration of donor in GA2O3—based single crystalSASAKI KOHEI·Filed 2012·Granted Feb 10, 2015·0 cites·7 claims
- 3552US2024379881A1P-n junction diodeTAMURA SEISAKUSHO KK·Filed 2022·Application pending·0 cites
- 3651US2016365418A1Ga2O3 SEMICONDUCTOR ELEMENTTAMURA SEISAKUSHO KK·Filed 2016·Application pending·0 cites
- 3749US12230500B2Method of manufacturing a beta-Ga2O3-based single crystal film by flowing a Ga chloride gas, an oxygen gas, and a dopant gasTAMURA SEISAKUSHO KK·Filed 2021·Granted Feb 18, 2025·0 cites·3 claims
- 3849US9611567B2Method for controlling donor concentration in Ga2O3-based and method for forming ohmic contactTAMURA SEISAKUSHO KK·Filed 2014·Granted Apr 4, 2017·0 cites·20 claims
- 3948US11469334B2Schottky barrier diodeTDK CORP·Filed 2019·Granted Oct 11, 2022·0 cites·14 claims
- 4046US11626522B2Schottky barrier diodeTDK CORP·Filed 2018·Granted Apr 11, 2023·0 cites·20 claims
- 4146US11456388B2Trench MOS schottky diode and method for producing sameTAMURA SEISAKUSHO KK·Filed 2019·Granted Sep 27, 2022·0 cites·9 claims
- 4246US9657410B2Method for producing Ga2O3 based crystal filmTAMURA SEISAKUSHO KK·Filed 2012·Granted May 23, 2017·0 cites·20 claims
- 4345US11264241B2Semiconductor substrate, semiconductor element and method for producing semiconductor substrateTAMURA SEISAKUSHO KK·Filed 2018·Granted Mar 1, 2022·0 cites·7 claims
- 4445US10825935B2Trench MOS-type Schottky diodeTAMURA SEISAKUSHO KK·Filed 2017·Granted Nov 3, 2020·0 cites·10 claims
- 4544US2023043402A1Trench-type mesfetNOVEL CRYSTAL TECH INC·Filed 2020·Application pending·0 cites
- 4644US2016312380A1Ga2O3 BASED CRYSTAL FILM FORMING METHOD, AND CRYSTAL LAMINATED STRUCTURETAMURA SEISAKUSHO KK·Filed 2016·Application pending·0 cites
- 4742US11923464B2Schottky barrier diodeTAMURA SEISAKUSHO KK·Filed 2018·Granted Mar 5, 2024·0 cites·3 claims
- 4841US2016141372A1Ga2O3 SEMICONDUCTOR ELEMENTTAMURA SEISAKUSHO KK·Filed 2014·Application pending·0 cites
- 4940US2014217470A1Ga2O3 SEMICONDUCTOR ELEMENTUNIV KYOTO·Filed 2012·Application pending·0 cites
- 5039US2014217471A1Ga2O3 SEMICONDUCTOR ELEMENTSASAKI KOHEI·Filed 2012·Application pending·0 cites
Showing the top 50 of 53 patent records by PatentIndex Score.
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