US2018350967A1PendingUtilityA1
Ga2O3 SEMICONDUCTOR ELEMENT
Est. expirySep 8, 2031(~5.1 yrs left)· nominal 20-yr term from priority
H10P 14/3446H10P 14/3442H10P 14/3434H10P 14/3234H10P 14/2926H10P 14/2918H10P 14/22H10P 14/20H01L 29/4236H01L 21/02576H01L 21/02581H01L 29/66734H01L 21/02565H01L 29/66969H01L 29/7827H01L 29/41741H01L 29/24H01L 21/02631H01L 29/36H01L 21/02634H01L 21/02483H01L 29/7802H01L 21/02414H01L 21/02433H01L 29/78H01L 29/7813H01L 29/365H01L 29/66712H01L 29/045H10D 62/605H10D 62/60H10D 99/00H10D 64/513H10D 64/252H10D 62/405H10D 62/80H10D 30/668H10D 30/0297H10D 30/0291H10D 30/63H10D 30/60H10D 30/66
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Claims
Abstract
A semiconductor element includes a Molecular Beam Epitaxy (MBE)-grown channel layer including a β-Ga 2 O 3 single crystal layer. The MBE-grown channel layer is formed on a β-Ga 2 O 3 single crystal substrate.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1 . A semiconductor element, comprising;
a Molecular Beam Epitaxy (MBE)-grown channel layer consisting of a β-Ga 2 O 3 single crystal layer, wherein the MBE-grown channel layer is formed on a β-Ga 2 O 3 single crystal substrate.
2 . The semiconductor element according to claim 1 , wherein a main surface of the β-Ga 2 O 3 single crystal substrate includes a plane rotated by not less than 50° 0 and not more than 90° around a b-axis or a c-axis with respect to a (100) plane.
3 . The semiconductor element according to claim 1 , wherein the β-Ga 2 O 3 single crystal layer comprises a p-type dopant.
4 . A semiconductor element according to claim 3 , wherein the semiconductor element includes a type of a normally-off transistor.Join the waitlist — get patent alerts
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