Ga2O3-BASED SINGLE CRYSTAL SUBSTRATE

Abstract

Provided is a Ga 2 O 3 -based single crystal substrate capable of achieving a high processing yield. A Ga 2 O 3 -based single crystal substrate having a crack density of less than 0.05 cracks/cm can be obtained that has as a principal surface thereof a surface rotated 10-150° from the (100) plane, when a rotation direction from the (100) plane to the (001) plane via the (101) plane is defined as positive, having the [010] axis as the rotation axis.

1 . A Ga 2 O 3 -based single crystal substrate, comprising as a principal surface a plane rotated 10 to 150° from a (100) plane about a [010] axis where a direction of rotation from the (100) plane to the (001) plane via a (101) plane is defined as positive,
 wherein the substrate has a crack density of less than 0.05 cracks/cm. 
 
     
     
         2 . A Ga 2 O 3 -based single crystal substrate, comprising as a principal surface a plane rotated 10 to 70° or 100 to 150° from a (100) plane about a [010] axis where a direction of rotation from the (100) plane to a (001) plane via a (101) plane is defined as positive,
 wherein the substrate has a crack density of less than 0.05 cracks/cm and no latent scratch. 
 
     
     
         3 . A Ga 2 O 3 -based single crystal substrate, comprising as a principal surface a plane rotated 10 to 90° from a (100) plane about a [001] axis,
 wherein the substrate has a crack density of less than 0.05 cracks/cm. 
 
     
     
         4 . A Ga 2 O 3 -based single crystal substrate, comprising as a principal surface a plane rotated 10 to 90° from a (100) plane about a [001] axis,
 wherein the substrate has a crack density of less than 0.05 cracks/cm and no latent scratch.