Inventor · disambiguated record
Minxian Zhang
Also filed as: ZHANG MINXIAN · ZHANG MINXIAN MAX
47 granted patents·29 pending applications·114 citations·filing 2010–2025
97Inventor score
Files withTETRAMEM INC46YANG JIANHUA9HEWLETT PACKARD DEVELOPMENT CO7HEWLETT PACKARD ENTPR DEV LP6ZHANG MINXIAN MAX3
Top patents by PatentIndex Score
76 records- 0196US11527712B2Low current RRAM-based crossbar array circuits implemented with interface engineering technologiesTETRAMEM INC·Filed 2020·Granted Dec 13, 2022·6 cites·14 claims
- 0294US8525553B1Negative differential resistance comparator circuitsYI WEI·Filed 2012·Granted Sep 3, 2013·23 cites·15 claims
- 0392US10804324B11T2R RRAM cell and common reactive electrode in crossbar array circuitsTETRAMEM INC·Filed 2019·Granted Oct 13, 2020·13 cites·10 claims
- 0491US11283014B2RRAM crossbar array circuits with specialized interface layers for low current operationTETRAMEM INC·Filed 2019·Granted Mar 22, 2022·3 cites·18 claims
- 0588US12484462B2Methods for fabricating RRAM crossbar array circuits with specialized interface layers for low current operationTETRAMEM INC·Filed 2024·Granted Nov 25, 2025·0 cites·14 claims
- 0688US12477963B2CMOS-compatible resistive random-access memory devices with a via device structureTETRAMEM INC·Filed 2022·Granted Nov 18, 2025·1 cites·20 claims
- 0788US9082533B2Memristive element based on hetero-junction oxideYANG JIANHUA·Filed 2011·Granted Jul 14, 2015·7 cites·22 claims
- 0888US8324976B2Oscillator circuitry having negative differential resistanceBORGHETTI JULIEN·Filed 2011·Granted Dec 4, 2012·9 cites·20 claims
- 0987US8921960B2Memristor cell structures for high density arraysYANG JIANHUA·Filed 2012·Granted Dec 30, 2014·8 cites·19 claims
- 1084US2025098556A1Increasing selector surface area in crossbar array circuitsTETRAMEM INC·Filed 2024·Application pending·0 cites
- 1181US11043265B2Memory devices with volatile and non-volatile behaviorHEWLETT PACKARD ENTPR DEV LP·Filed 2016·Granted Jun 22, 2021·6 cites·12 claims
- 1281US9224949B2Memristive elements that exhibit minimal sneak path currentYANG JIANHUA·Filed 2011·Granted Dec 29, 2015·6 cites·6 claims
- 1380US2025031587A1Low current rram-based crossbar array circuits implemented with interface engineering technologiesTETRAMEM INC·Filed 2024·Application pending·0 cites
- 1479US12120887B2Increasing selector surface area in crossbar array circuitsTETRAMEM INC·Filed 2022·Granted Oct 15, 2024·0 cites·11 claims
- 1579US9793473B2Memristor structuresHEWLETT PACKARD ENTPR DEV LP·Filed 2013·Granted Oct 17, 2017·3 cites·17 claims
- 1678US12127487B2Low current RRAM-based crossbar array circuits implemented with interface engineering technologiesTETRAMEM INC·Filed 2022·Granted Oct 22, 2024·0 cites·5 claims
- 1778US11985911B2Methods for fabricating resistive random-access memory stacksTETRAMEM INC·Filed 2022·Granted May 14, 2024·0 cites·14 claims
- 1878US8385101B2Memory resistor having plural different active materialsHEWLETT PACKARD DEVELOPMENT CO·Filed 2010·Granted Feb 26, 2013·6 cites·17 claims
- 1976US10096651B2Resistive memory devices and arraysHEWLETT PACKARD ENTPR DEV LP·Filed 2015·Granted Oct 9, 2018·3 cites·12 claims
- 2076US9331278B2Forming memristors on imaging devicesHEWLETT PACKARD DEVELOPMENT CO·Filed 2014·Granted May 3, 2016·2 cites·15 claims
- 2176US2025040457A1Resistive random-access memory devices with multi-component electrodesTETRAMEM INC·Filed 2024·Application pending·0 cites
- 2276US2025031384A1Crossbar array circuit with 3d vertical rramTETRAMEM INC·Filed 2024·Application pending·0 cites
- 2373US12490441B2Tunneling-based selectors incorporating van der Waals (vdW) materialsTETRAMEM INC·Filed 2022·Granted Dec 2, 2025·0 cites·20 claims
- 2473US2025219650A1Integrated sensing and machine learning processing devicesTETRAMEM INC·Filed 2025·Application pending·0 cites
- 2571US8487289B2Electrically actuated deviceYANG JIANHUA·Filed 2010·Granted Jul 16, 2013·3 cites·17 claims
- 2670US8767438B2Memelectronic deviceYANG JIANHUA·Filed 2012·Granted Jul 1, 2014·4 cites·20 claims
- 2769US12471298B2Ferroelectric non-volatile memory devicesTETRAMEM INC·Filed 2022·Granted Nov 11, 2025·0 cites·17 claims
- 2869US12302768B2Resistive random-access memory devices with multi-component electrodesTETRAMEM INC·Filed 2021·Granted May 13, 2025·0 cites·20 claims
- 2969US9178153B2Memristor structure with a dopant sourceZHANG MINXIAN MAX·Filed 2011·Granted Nov 3, 2015·4 cites·20 claims
- 3068US12396375B2Resistive random-access memory devices with engineered electronic defects and methods for making the sameTETRAMEM INC·Filed 2022·Granted Aug 19, 2025·0 cites·17 claims
- 3168US12382847B2Resistive random-access memory devices with multi-component electrodes and discontinuous interface layersTETRAMEM INC·Filed 2021·Granted Aug 5, 2025·0 cites·17 claims
- 3268US8779409B2Low energy memristors with engineered switching channel materialsHEWLETT PACKARD DEVELOPMENT CO·Filed 2012·Granted Jul 15, 2014·3 cites·16 claims
- 3367US12232332B2Integrated sensing and machine learning processing devicesTETRAMEM INC·Filed 2022·Granted Feb 18, 2025·0 cites·19 claims
- 3466US12213390B2Resistive random-access memory devices with multi-component electrodesTETRAMEM INC·Filed 2021·Granted Jan 28, 2025·0 cites·13 claims
- 3566US2025024760A1Forming-free random-access memory (rram) devicesTETRAMEM INC·Filed 2024·Application pending·0 cites
- 3665US12137622B2Forming-free random-access memory (RRAM) devicesTETRAMEM INC·Filed 2022·Granted Nov 5, 2024·0 cites·13 claims
- 3765US2022045271A1Patterning oxidation resistant electrode in crossbar array circuitsTETRAMEM INC·Filed 2021·Application pending·0 cites
- 3864US11532668B2Increasing selector surface area in crossbar array circuitsTETRAMEM INC·Filed 2019·Granted Dec 20, 2022·1 cites·12 claims
- 3963US9224821B2Customizable nonlinear electrical devicesZHANG MINXIAN MAX·Filed 2012·Granted Dec 29, 2015·1 cites·15 claims
- 4063US2025160224A1Resistive random-access memory devices with multi-component electrodesTETRAMEM INC·Filed 2025·Application pending·0 cites
- 4159US8872153B2Device structure for long endurance memristorsYANG JIANHUA·Filed 2010·Granted Oct 28, 2014·2 cites·13 claims
- 4259US2025275209A1Deuterium-treated ferroelectric devices and methods for fabricating the sameTETRAMEM INC·Filed 2024·Application pending·0 cites
- 4358US2025160222A1Deuterium-treated resistive random-access memory (rram) devicesTETRAMEM INC·Filed 2023·Application pending·0 cites
- 4458US2025254886A1Ferroelectric memory devices with a three-dimensional topography structureTETRAMEM INC·Filed 2024·Application pending·0 cites
- 4558US2025203890A1Ferroelectric memory devicesTETRAMEM INC·Filed 2023·Application pending·0 cites
- 4657US2025127068A1Resistive random-access memory (rram) devices with electrodes containing rutheniumTETRAMEM INC·Filed 2023·Application pending·0 cites
- 4756US11177438B2Patterning oxidation resistant electrode in crossbar array circuitsTETRAMEM INC·Filed 2019·Granted Nov 16, 2021·0 cites·14 claims
- 4856US9558869B2Negative differential resistance deviceHEWLETT PACKARD DEVELOPMENT CO LP·Filed 2015·Granted Jan 31, 2017·0 cites·20 claims
- 4955US2021028230A1Crossbar array circuit with 3d vertical rramTETRAMEM INC·Filed 2019·Application pending·0 cites
- 5054US2024095512A1Integrated sensing and machine learning processing devicesTETRAMEM INC·Filed 2022·Application pending·0 cites
Showing the top 50 of 76 patent records by PatentIndex Score.
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