Assignee
YANG JIANHUA
CN34 patents
Top patents by PatentIndex Score
USD667232SSep 18, 2012
Office chair
YANG JIANHUA17 citations93
US8575585B2Nov 5, 2013
Memristive device
YANG JIANHUA18 citations92
US8415652B2Apr 9, 2013
Memristors with a switching layer comprising a composite of multiple phases
YANG JIANHUA21 citations92
USD1053425SDec 3, 2024
Hold the moon astronaut projection lamp
YANG JIANHUA7 citations86
USD1050551SNov 5, 2024
Hold the moon astronaut projection lamp
YANG JIANHUA9 citations86
US9082533B2Jul 14, 2015
Memristive element based on hetero-junction oxide
YANG JIANHUA7 citations84
US8921960B2Dec 30, 2014
Memristor cell structures for high density arrays
YANG JIANHUA8 citations84
US8766228B2Jul 1, 2014
Electrically actuated device and method of controlling the formation of dopants therein
YANG JIANHUA7 citations84
US8546785B2Oct 1, 2013
Memristive device
YANG JIANHUA14 citations84
USD673384SJan 1, 2013
Office chair
YANG JIANHUA6 citations84
US8259485B2Sep 4, 2012
Multilayer structures having memory elements with varied resistance of switching layers
YANG JIANHUA9 citations84
US8325507B2Dec 4, 2012
Memristors with an electrode metal reservoir for dopants
YANG JIANHUA15 citations83
US9224949B2Dec 29, 2015
Memristive elements that exhibit minimal sneak path current
YANG JIANHUA6 citations73
US8737113B2May 27, 2014
Memory resistor having multi-layer electrodes
YANG JIANHUA6 citations72
US8767438B2Jul 1, 2014
Memelectronic device
YANG JIANHUA4 citations71
USD936421SNov 23, 2021
Cake turntable
YANG JIANHUA7 citations68
US8710483B2Apr 29, 2014
Memristive junction with intrinsic rectifier
YANG JIANHUA3 citations63
US8530873B2Sep 10, 2013
Electroforming free memristor and method for fabricating thereof
YANG JIANHUA2 citations63
US8207520B2Jun 26, 2012
Programmable crosspoint device with an integral diode
YANG JIANHUA2 citations63
US8872153B2Oct 28, 2014
Device structure for long endurance memristors
YANG JIANHUA2 citations62
US8519372B2Aug 27, 2013
Electroforming-free nanoscale switching device
YANG JIANHUA2 citations62
US8487289B2Jul 16, 2013
Electrically actuated device
YANG JIANHUA3 citations62
US8710865B2Apr 29, 2014
Field-programmable analog array with memristors
YANG JIANHUA2 citations61
US9159476B2Oct 13, 2015
Negative differential resistance device
YANG JIANHUA0 citations52
US8982601B2Mar 17, 2015
Switchable junction with an intrinsic diode formed with a voltage dependent resistor
YANG JIANHUA0 citations52
US8879300B2Nov 4, 2014
Switchable two-terminal devices with diffusion/drift species
YANG JIANHUA0 citations52
US8587985B2Nov 19, 2013
Memory array with graded resistance lines
YANG JIANHUA0 citations52
US9257645B2Feb 9, 2016
Memristors having mixed oxide phases
YANG JIANHUA0 citations51
US9024285B2May 5, 2015
Nanoscale switching devices with partially oxidized electrodes
YANG JIANHUA0 citations51
US8570138B2Oct 29, 2013
Resistive switches
YANG JIANHUA0 citations51
US8437072B2May 7, 2013
Individually addressable nano-scale mechanical actuators
YANG JIANHUA0 citations50
US8912520B2Dec 16, 2014
Nanoscale switching device
YANG JIANHUA0 citations49
US9885937B2Feb 6, 2018
Dynamic optical crossbar array
YANG JIANHUA0 citations42
US9184213B2Nov 10, 2015
Nanoscale switching device
YANG JIANHUA0 citations41