Inventor · disambiguated record
Hidenori Shimawaki
Also filed as: SHIMAWAKI HIDENORI
15 granted patents·6 pending applications·272 citations·filing 1989–2021
93Inventor score
Files withNEC CORP11NEC COMPOUND SEMICONDUCTOR5ENVISION AESC JAPAN LTD2AESC JAPAN LTD1MARUHASHI KENICHI1
Top patents by PatentIndex Score
21 records- 0195US7800131B2Field effect transistorNEC CORP·Filed 2006·Granted Sep 21, 2010·48 cites·17 claims
- 0294US7863648B2Field effect transistorNEC CORP·Filed 2006·Granted Jan 4, 2011·38 cites·15 claims
- 0386US7924799B2Radio communication deviceNEC CORP·Filed 2005·Granted Apr 12, 2011·14 cites·16 claims
- 0485US5903018ABipolar transistor including a compound semiconductorNEC CORP·Filed 1996·Granted May 11, 1999·67 cites·7 claims
- 0572US6881988B2Heterojunction bipolar transistor and semiconductor integrated circuit device using the sameNEC COMPOUND SEMICONDUCTOR·Filed 2002·Granted Apr 19, 2005·19 cites·12 claims
- 0672US5321302AHeterojunction bipolar transistor having base structure for improving both cut-off frequency and maximum oscillation frequencyNEC CORP·Filed 1993·Granted Jun 14, 1994·34 cites·17 claims
- 0760US6924201B2Heterojunction bipolar transistor and method of producing the sameNEC COMPOUND SEMICONDUCTOR·Filed 2003·Granted Aug 2, 2005·8 cites·24 claims
- 0857US8326244B2Power amplifier, and method of controlling power amplifierMARUHASHI KENICHI·Filed 2008·Granted Dec 4, 2012·3 cites·8 claims
- 0956US6525388B1Compound semiconductor device having diode connected between emitter and collector of bipolar transistorNEC COMPOUND SEMICONDUCTOR·Filed 2000·Granted Feb 25, 2003·7 cites·21 claims
- 1048US4902643AMethod of selective epitaxial growth for compound semiconductorsNEC CORP·Filed 1989·Granted Feb 20, 1990·15 cites·12 claims
- 1144US7038244B2Semiconductor device and method of manufacturing the sameNEC CORP·Filed 2004·Granted May 2, 2006·2 cites·5 claims
- 1244US2023316073A1Data processing system, model generation device, data processing method, model generation method, and programENVISION AESC JAPAN LTD·Filed 2021·Application pending·0 cites
- 1342US12443152B2Remaining capacity estimation apparatus, model generation apparatus, and non-transitory computer-readable mediumAESC JAPAN LTD·Filed 2021·Granted Oct 14, 2025·0 cites·16 claims
- 1442US5296389AMethod of fabricating a heterojunction bipolar transistorNEC CORP·Filed 1992·Granted Mar 22, 1994·11 cites·11 claims
- 1539US6661038B2Semiconductor device and method of producing the sameNEC COMPOUND SEMICONDUCTOR·Filed 2002·Granted Dec 9, 2003·2 cites·33 claims
- 1638US2023213585A1Deterioration estimation apparatus, model generation apparatus, deterioration estimation method, model generation method, and non-transitory computer-readable storage mediumENVISION AESC JAPAN LTD·Filed 2021·Application pending·0 cites
- 1736US2002066909A1Heterojunction bipolar transistor and method of producing the sameNEC CORP·Filed 2001·Application pending·0 cites
- 1833US2002139997A1Compound semiconductor device having heterojunction bipolar transistor reduced in collector contact resistance by delta-doped region and process for fabrication thereofFiled 2002·Application pending·0 cites
- 1933US2001048120A1Heterojunction bipolar transistor composed of emitter layer which includes orderly structured layer and disorderly structured layerNEC CORP·Filed 2001·Application pending·0 cites
- 2033US2002195620A1Compound semiconductor device having heterojunction bipolar transister and other component integrated together and process for fabrication thereofNEC COMPOUND SEMICONDUCTOR·Filed 2002·Application pending·0 cites
- 2132US5160994AHeterojunction bipolar transistor with improved base layerNEC CORP·Filed 1991·Granted Nov 3, 1992·4 cites·6 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →