Inventor · disambiguated record
Christiaan J. Werkhoven
Also filed as: WERKHOVEN CHRISTIAAN · WERKHOVEN CHRISTIAAN J
37 granted patents·9 pending applications·2,681 citations·filing 1982–2023
98Inventor score
Top patents by PatentIndex Score
46 records- 0199US7297641B2Method to form ultra high quality silicon-containing compound layersASM INC·Filed 2003·Granted Nov 20, 2007·625 cites·20 claims
- 0299US6933225B2Graded thin filmsASM INT·Filed 2002·Granted Aug 23, 2005·147 cites·33 claims
- 0399US6534395B2Method of forming graded thin films using alternating pulses of vapor phase reactantsASM MICROCHEMISTRY OY·Filed 2001·Granted Mar 18, 2003·1.3k cites·33 claims
- 0498US7964513B2Method to form ultra high quality silicon-containing compound layersASM INC·Filed 2009·Granted Jun 21, 2011·75 cites·19 claims
- 0598US7651953B2Method to form ultra high quality silicon-containing compound layersASM INC·Filed 2007·Granted Jan 26, 2010·79 cites·24 claims
- 0698US6703708B2Graded thin filmsASM INT·Filed 2002·Granted Mar 9, 2004·123 cites·36 claims
- 0798US6544900B2In situ dielectric stacksASM INC·Filed 2001·Granted Apr 8, 2003·163 cites·45 claims
- 0896US8436363B2Metallic carrier for layer transfer and methods for forming the sameWERKHOVEN CHRISTIAAN J·Filed 2011·Granted May 7, 2013·31 cites·37 claims
- 0992US8323407B2Gallium trichloride injection schemeARENA CHANTAL·Filed 2011·Granted Dec 4, 2012·10 cites·17 claims
- 1092US7981791B2Thin filmsASM INT·Filed 2008·Granted Jul 19, 2011·10 cites·11 claims
- 1191US8382898B2Methods for high volume manufacture of group III-V semiconductor materialsSOITEC SILICON ON INSULATOR·Filed 2007·Granted Feb 26, 2013·10 cites·24 claims
- 1290US9038565B2Abatement of reaction gases from gallium nitride depositionSOITEC SILICON ON INSULATOR·Filed 2013·Granted May 26, 2015·3 cites·17 claims
- 1389US8585820B2Abatement of reaction gases from gallium nitride depositionARENA CHANTAL·Filed 2007·Granted Nov 19, 2013·6 cites·22 claims
- 1489US8388755B2Thermalization of gaseous precursors in CVD reactorsARENA CHANTAL·Filed 2008·Granted Mar 5, 2013·13 cites·23 claims
- 1589US8197597B2Gallium trichloride injection schemeARENA CHANTAL·Filed 2007·Granted Jun 12, 2012·12 cites·20 claims
- 1687US8133806B1Systems and methods for forming semiconductor materials by atomic layer depositionWERKHOVEN CHRISTIAAN J·Filed 2010·Granted Mar 13, 2012·6 cites·20 claims
- 1784US8574968B2Epitaxial methods and templates grown by the methodsARENA CHANTAL·Filed 2008·Granted Nov 5, 2013·12 cites·19 claims
- 1879US8887650B2Temperature-controlled purge gate valve for chemical vapor deposition chamberSOITEC SILICON ON INSULATOR·Filed 2013·Granted Nov 18, 2014·3 cites·19 claims
- 1978US9481944B2Gas injectors including a funnel- or wedge-shaped channel for chemical vapor deposition (CVD) systems and CVD systems with the sameSOITEC SILICON ON INSULATOR·Filed 2013·Granted Nov 1, 2016·1 cites·9 claims
- 2078US8431419B2UV absorption based monitor and control of chloride gas streamBERTRAM JR RONALD THOMAS·Filed 2009·Granted Apr 30, 2013·3 cites·15 claims
- 2176US8785316B2Methods for forming semiconductor materials by atomic layer deposition using halide precursorsSOITEC SILICON ON INSULATOR·Filed 2013·Granted Jul 22, 2014·2 cites·18 claims
- 2276US7452757B2Silicon-on-insulator structures and methodsASM INC·Filed 2003·Granted Nov 18, 2008·17 cites·12 claims
- 2375US9312339B2Strain relaxation using metal materials and related structuresSOITEC SILICON ON INSULATOR·Filed 2014·Granted Apr 12, 2016·2 cites·24 claims
- 2474US8486193B2Systems for forming semiconductor materials by atomic layer depositionWERKHOVEN CHRISTIAAN J·Filed 2012·Granted Jul 16, 2013·2 cites·20 claims
- 2573US8637383B2Strain relaxation using metal materials and related structuresWERKHOVEN CHRISTIAAN J·Filed 2010·Granted Jan 28, 2014·2 cites·22 claims
- 2672US8741385B2Thermalization of gaseous precursors in CVD reactorsSOITEC SILICON ON INSULATOR·Filed 2013·Granted Jun 3, 2014·2 cites·18 claims
- 2770US9580836B2Equipment for high volume manufacture of group III-V semiconductor materialsARENA CHANTAL·Filed 2007·Granted Feb 28, 2017·1 cites·19 claims
- 2868US8692260B2Method of forming a composite laser substrateARENA CHANTAL·Filed 2009·Granted Apr 8, 2014·2 cites·13 claims
- 2965US2024084446A1Reaction chamber component, deposition apparatus provided with such component and method of protecting such componentASM IP HOLDING BV·Filed 2023·Application pending·0 cites
- 3064US8545628B2Temperature-controlled purge gate valve for chemical vapor deposition chamberARENA CHANTAL·Filed 2007·Granted Oct 1, 2013·1 cites·17 claims
- 3163US9481943B2Gallium trichloride injection schemeSOITEC SILICON ON INSULATOR·Filed 2012·Granted Nov 1, 2016·1 cites·18 claims
- 3263US8916483B2Methods of forming semiconductor structures including III-V semiconductor material using substrates comprising molybdenumWERKHOVEN CHRISTIAAN J·Filed 2012·Granted Dec 23, 2014·1 cites·20 claims
- 3358US9716148B2Methods of forming semiconductor structures including III-V semiconductor material using substrates comprising molybdenum, and structures formed by such methodsSOITEC SILICON ON INSULATOR·Filed 2014·Granted Jul 25, 2017·0 cites·19 claims
- 3458US9175419B2Apparatus for delivering precursor gases to an epitaxial growth substrateARENA CHANTAL·Filed 2008·Granted Nov 3, 2015·0 cites·12 claims
- 3557US2010180913A1Methods for in-situ chamber cleaning process for high volume manufacture of semiconductor materialsARENA CHANTAL·Filed 2008·Application pending·0 cites
- 3653US9202741B2Metallic carrier for layer transfer and methods for forming the sameSOITEC SILICON ON INSULATOR·Filed 2013·Granted Dec 1, 2015·0 cites·19 claims
- 3750US2011256718A1Thin filmsASM INT·Filed 2011·Application pending·0 cites
- 3849US9142412B2Semiconductor devices including substrate layers and overlying semiconductor layers having closely matching coefficients of thermal expansion, and related methodsWERKHOVEN CHRISTIAAN J·Filed 2011·Granted Sep 22, 2015·0 cites·27 claims
- 3948US2012132922A1Composite substrate with crystalline seed layer and carrier layer with a coincident cleavage planeARENA CHANTAL·Filed 2009·Application pending·0 cites
- 4047US2009223441A1High volume delivery system for gallium trichlorideARENA CHANTAL·Filed 2007·Application pending·0 cites
- 4147US2015340430A1Semiconductor devices including substrate layers and overlying semiconductor layers having closely matching coefficients of thermal expansion, and related methodsSOITEC SILICON ON INSULATOR·Filed 2015·Application pending·0 cites
- 4247US2013052806A1Deposition systems having access gates at desirable locations, and related methodsBERTRAM JR RONALD THOMAS·Filed 2012·Application pending·0 cites
- 4347US2016145767A1Deposition systems having access gates at desirable locations, and related methodsSOITEC SILICON ON INSULATOR·Filed 2016·Application pending·0 cites
- 4445US2010242835A1High volume delivery system for gallium trichlorideS O I T E C SILICON ON INSULAT·Filed 2007·Application pending·0 cites
- 4543US9082948B2Methods of fabricating semiconductor structures using thermal spray processes, and semiconductor structures fabricated using such methodsWERKHOVEN CHRISTIAAN J·Filed 2011·Granted Jul 14, 2015·0 cites·22 claims
- 4624US4432810AMethod for improving luminescence and electrical properties in semiconductor materials by electron irradiation at liquid nitrogen temperaturesPHILIPS CORP·Filed 1982·Granted Feb 21, 1984·1 cites·11 claims
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