Inventor · disambiguated record
Andreas Gehring
Also filed as: GEHRING ANDREAS
21 granted patents·3 pending applications·94 citations·filing 2002–2012
93Inventor score
Files withADVANCED MICRO DEVICES INC6GLOBALFOUNDRIES INC5MOWRY ANTHONY3ENGEL TECHNOLOGIEBERATUNG ENTW2GEHRING ANDREAS2
Top patents by PatentIndex Score
24 records- 0192US7754556B2Reducing transistor junction capacitance by recessing drain and source regionsADVANCED MICRO DEVICES INC·Filed 2008·Granted Jul 13, 2010·18 cites·19 claims
- 0291US7763505B2Method for reducing crystal defects in transistors with re-grown shallow junctions by appropriately selecting crystalline orientationsGLOBALFOUNDRIES INC·Filed 2007·Granted Jul 27, 2010·18 cites·16 claims
- 0386US8227266B2Test structure for monitoring process characteristics for forming embedded semiconductor alloys in drain/source regionsMOWRY ANTHONY·Filed 2010·Granted Jul 24, 2012·6 cites·7 claims
- 0483US7943442B2SOI device having a substrate diode with process tolerant configuration and method of forming the SOI deviceADVANCED MICRO DEVICES INC·Filed 2007·Granted May 17, 2011·9 cites·12 claims
- 0583US7713763B2Test structure for monitoring process characteristics for forming embedded semiconductor alloys in drain/source regionsADVANCED MICRO DEVICES INC·Filed 2008·Granted May 11, 2010·6 cites·11 claims
- 0680US8093634B2In situ formed drain and source regions in a silicon/germanium containing transistor deviceMOWRY ANTHONY·Filed 2009·Granted Jan 10, 2012·9 cites·5 claims
- 0777US7939399B2Semiconductor device having a strained semiconductor alloy concentration profileGLOBALFOUNDRIES INC·Filed 2007·Granted May 10, 2011·7 cites·10 claims
- 0873US7754555B2Transistor having a channel with biaxial strain induced by silicon/germanium in the gate electrodeGLOBALFOUNDRIES INC·Filed 2007·Granted Jul 13, 2010·5 cites·8 claims
- 0970US7790537B2Method for creating tensile strain by repeatedly applied stress memorization techniquesGLOBALFOUNDRIES INC·Filed 2007·Granted Sep 7, 2010·4 cites·11 claims
- 1066US7772077B2Method of forming a semiconductor structure comprising a field effect transistor having a stressed channel regionADVANCED MICRO DEVICES INC·Filed 2007·Granted Aug 10, 2010·2 cites·9 claims
- 1163US8377761B2SOI device having a substrate diode with process tolerant configuration and method of forming the SOI deviceADVANCED MICRO DEVICES INC·Filed 2011·Granted Feb 19, 2013·1 cites·20 claims
- 1262US7897451B2Method for creating tensile strain by selectively applying stress memorization techniques to NMOS transistorsGLOBALFOUNDRIES INC·Filed 2008·Granted Mar 1, 2011·1 cites·21 claims
- 1360US7875336B2Method for producing a component, a tool for carrying out said method and the componentFAURECIA INNENRAUM SYS GMBH·Filed 2006·Granted Jan 25, 2011·1 cites·5 claims
- 1457US8129236B2Method for creating tensile strain by applying stress memorization techniques at close proximity to the gate electrodeGEHRING ANDREAS·Filed 2008·Granted Mar 6, 2012·1 cites·14 claims
- 1554US8530894B2Test structure for monitoring process characteristics for forming embedded semiconductor alloys in drain/source regionsMOWRY ANTHONY·Filed 2012·Granted Sep 10, 2013·0 cites·7 claims
- 1653US7098564B2Work pieceBOSCH GMBH ROBERT·Filed 2002·Granted Aug 29, 2006·6 cites·12 claims
- 1747US7816199B2Method of forming a semiconductor structure comprising an implantation of ions of a non-doping elementADVANCED MICRO DEVICES INC·Filed 2008·Granted Oct 19, 2010·0 cites·20 claims
- 1844US8394314B2Method for producing a component provided with a multipart cover layer and said componentHEINZ CLAUS·Filed 2006·Granted Mar 12, 2013·0 cites·14 claims
- 1944US8183605B2Reducing transistor junction capacitance by recessing drain and source regionsFEUDEL THOMAS·Filed 2010·Granted May 22, 2012·0 cites·24 claims
- 2042US8298924B2Method for differential spacer removal by wet chemical etch process and device with differential spacer structureWIATR MACIEJ·Filed 2007·Granted Oct 30, 2012·0 cites·13 claims
- 2141US2008034197A1Method of encrypting or decrypting data packets of a data stream as well as a signal sequence and data processing system for performing the methodENGEL TECHNOLOGIEBERATUNG ENTW·Filed 2006·Application pending·0 cites
- 2241US2007076882A1Network component for a communication network, communication network, and method of providing a data connectionENGEL TECHNOLOGIEBERATUNG ENTW·Filed 2006·Application pending·0 cites
- 2340US2009108415A1Increasing etch selectivity during the patterning of a contact structure of a semiconductor deviceLENSKI MARKUS·Filed 2008·Application pending·0 cites
- 2439US8652913B2Method for forming silicon/germanium containing drain/source regions in transistors with reduced silicon/germanium lossGEHRING ANDREAS·Filed 2007·Granted Feb 18, 2014·0 cites·16 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →