Inventor · disambiguated record
Chunlin Liang
Also filed as: LIANG CHUNLIN
32 granted patents·3 pending applications·2,070 citations·filing 1996–2019
98Inventor score
Top patents by PatentIndex Score
35 records- 0199US6461895B1Process for making active interposer for high performance packaging applicationsINTEL CORP·Filed 2000·Granted Oct 8, 2002·353 cites·23 claims
- 0298US7022559B2MOSFET gate electrodes having performance tuned work functions and methods of making sameINTEL CORP·Filed 2002·Granted Apr 4, 2006·216 cites·22 claims
- 0398US6373111B1Work function tuning for MOSFET gate electrodesINTEL CORP·Filed 1999·Granted Apr 16, 2002·181 cites·13 claims
- 0497US6492217B1Complementary metal gates and a process for implementationINTEL CORP·Filed 2000·Granted Dec 10, 2002·134 cites·8 claims
- 0597US6130123AMethod for making a complementary metal gate electrode technologyINTEL CORP·Filed 1998·Granted Oct 10, 2000·174 cites·13 claims
- 0697US5972758APedestal isolated junction structure and method of manufactureINTEL CORP·Filed 1997·Granted Oct 26, 1999·233 cites·12 claims
- 0795US6265258B1Method for making a complementary metal gate electrode technologyINTEL CORP·Filed 2000·Granted Jul 24, 2001·76 cites·8 claims
- 0892US6166417AComplementary metal gates and a process for implementationINTEL CORP·Filed 1998·Granted Dec 26, 2000·82 cites·6 claims
- 0991US6365962B1Flip-chip on flex for high performance packaging applicationsINTEL CORP·Filed 2000·Granted Apr 2, 2002·47 cites·24 claims
- 1090US6743664B2Flip-chip on flex for high performance packaging applicationsINTEL CORP·Filed 2001·Granted Jun 1, 2004·45 cites·13 claims
- 1189US6600364B1Active interposer technology for high performance CMOS packaging applicationINTEL CORP·Filed 1999·Granted Jul 29, 2003·74 cites·17 claims
- 1288US6794232B2Method of making MOSFET gate electrodes with tuned work functionINTEL CORP·Filed 2003·Granted Sep 21, 2004·29 cites·4 claims
- 1387US6879009B2Integrated circuit with MOSFETS having bi-layer metal gate electrodesINTEL CORP·Filed 2003·Granted Apr 12, 2005·27 cites·17 claims
- 1487US6696333B1Method of making integrated circuit with MOSFETs having bi-layer metal gate electrodesINTEL CORP·Filed 1999·Granted Feb 24, 2004·46 cites·19 claims
- 1583US6790731B2Method for tuning a work function for MOSFET gate electrodesINTEL CORP·Filed 2002·Granted Sep 14, 2004·21 cites·4 claims
- 1681US6022815AMethod of fabricating next-to-minimum-size transistor gate using mask-edge gate definition techniqueINTEL CORP·Filed 1996·Granted Feb 8, 2000·61 cites·13 claims
- 1779US7045468B2Isolated junction structure and method of manufactureINTEL CORP·Filed 2003·Granted May 16, 2006·28 cites·12 claims
- 1877US5888897AProcess for forming an integrated structure comprising a self-aligned via/contact and interconnectINTEL CORP·Filed 1996·Granted Mar 30, 1999·52 cites·40 claims
- 1973US6998357B2High dielectric constant metal oxide gate dielectricsINTEL CORP·Filed 2003·Granted Feb 14, 2006·13 cites·16 claims
- 2071US6528856B1High dielectric constant metal oxide gate dielectricsINTEL CORP·Filed 1998·Granted Mar 4, 2003·22 cites·26 claims
- 2171US6180502B1Self-aligned process for making asymmetric MOSFET using spacer gate techniqueINTEL CORP·Filed 1998·Granted Jan 30, 2001·30 cites·5 claims
- 2270US6605845B1Asymmetric MOSFET using spacer gate techniqueINTEL CORP·Filed 1997·Granted Aug 12, 2003·30 cites·11 claims
- 2366US6222254B1Thermal conducting trench in a semiconductor structure and method for forming the sameINTEL CORP·Filed 1997·Granted Apr 24, 2001·24 cites·12 claims
- 2464US7223992B2Thermal conducting trench in a semiconductor structureINTEL CORP·Filed 2006·Granted May 29, 2007·2 cites·20 claims
- 2562US6642557B2Isolated junction structure for a MOSFETINTEL CORP·Filed 1999·Granted Nov 4, 2003·22 cites·17 claims
- 2660US7067406B2Thermal conducting trench in a semiconductor structure and method for forming the sameINTEL CORP·Filed 2003·Granted Jun 27, 2006·7 cites·11 claims
- 2759US6624045B2Thermal conducting trench in a seminconductor structure and method for forming the sameINTEL CORP·Filed 2001·Granted Sep 23, 2003·6 cites·9 claims
- 2858US7187044B2Complementary metal gate electrode technologyINTEL CORP·Filed 2000·Granted Mar 6, 2007·6 cites·8 claims
- 2956US6362078B1Dynamic threshold voltage device and methods for fabricating dynamic threshold voltage devicesINTEL CORP·Filed 1999·Granted Mar 26, 2002·15 cites·30 claims
- 3049US2022033321A1Solid waste treatment systemBEIJING GREENTECH SCIENCE AND TECH CO LTD·Filed 2019·Application pending·0 cites
- 3144US6689702B2High dielectric constant metal oxide gate dielectricsINTEL CORP·Filed 2002·Granted Feb 10, 2004·1 cites·16 claims
- 3242US6207541B1Method employing silicon nitride spacers for making an integrated circuit deviceINTEL CORP·Filed 1999·Granted Mar 27, 2001·8 cites·6 claims
- 3341US2004018706A1Method for forming a thermal conducting trench in a semiconductor structureFiled 2003·Application pending·0 cites
- 3436US6133128AMethod for patterning polysilicon gate layer based on a photodefinable hard mask processINTEL CORP·Filed 1997·Granted Oct 17, 2000·5 cites·29 claims
- 3530US2002008257A1Mosfet gate electrodes having performance tuned work functions and methods of making sameFiled 1998·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →