Inventor · disambiguated record
Fwu-Iuan Hshieh
Also filed as: HSHIEH FWU-IUAN
142 granted patents·20 pending applications·7,628 citations·filing 1989–2011
99Inventor score
Files withGEN SEMICONDUCTOR INC44SILICONIX INC32MEGAMOS CORP16FORCE MOS TECHNOLOGY CORP13MAGEPOWER SEMICONDUCTOR CORP13
Top patents by PatentIndex Score
162 records- 0198US6621107B2Trench DMOS transistor with embedded trench schottky rectifierGEN SEMICONDUCTOR INC·Filed 2001·Granted Sep 16, 2003·179 cites·26 claims
- 0298US5689128AHigh density trenched DMOS transistorSILICONIX INC·Filed 1995·Granted Nov 18, 1997·242 cites·7 claims
- 0398US5597765AMethod for making termination structure for power MOSFETSILICONIX INC·Filed 1995·Granted Jan 28, 1997·233 cites·11 claims
- 0497US6426260B1Switching speed improvement in DMO by implanting lightly doped region under gateMAGEPOWER SEMICONDUCTOR CORP·Filed 2000·Granted Jul 30, 2002·156 cites·21 claims
- 0597US5929481AHigh density trench DMOS transistor with trench bottom implantSILICONIX INC·Filed 1997·Granted Jul 27, 1999·254 cites·6 claims
- 0697US5895951AMOSFET structure and fabrication process implemented by forming deep and narrow doping regions through doping trenchesMEGAMOS CORP·Filed 1996·Granted Apr 20, 1999·239 cites·11 claims
- 0797US5592005APunch-through field effect transistorSILICONIX INC·Filed 1995·Granted Jan 7, 1997·171 cites·20 claims
- 0896US6593620B1Trench DMOS transistor with embedded trench schottky rectifierGEN SEMICONDUCTOR INC·Filed 2000·Granted Jul 15, 2003·123 cites·25 claims
- 0996US6475884B2Devices and methods for addressing optical edge effects in connection with etched trenchesGEN SEMICONDUCTOR INC·Filed 2001·Granted Nov 5, 2002·86 cites·11 claims
- 1096US6472708B1Trench MOSFET with structure having low gate chargeGEN SEMICONDUCTOR INC·Filed 2000·Granted Oct 29, 2002·98 cites·9 claims
- 1196US6472678B1Trench MOSFET with double-diffused body profileGEN SEMICONDUCTOR INC·Filed 2000·Granted Oct 29, 2002·102 cites·13 claims
- 1296US6262453B1Double gate-oxide for reducing gate-drain capacitance in trenched DMOS with high-dopant concentration buried-region under trenched gateMAGEPOWER SEMICONDUCTOR CORP·Filed 1998·Granted Jul 17, 2001·170 cites·14 claims
- 1396US6069043AMethod of making punch-through field effect transistorSILICONIX INC·Filed 1997·Granted May 30, 2000·127 cites·14 claims
- 1496US5757081ASurface mount and flip chip technology for total integrated circuit isolationSILICONIX INC·Filed 1996·Granted May 26, 1998·224 cites·8 claims
- 1596US5639676ATrenched DMOS transistor fabrication having thick termination region oxideSILICONIX INC·Filed 1996·Granted Jun 17, 1997·138 cites·6 claims
- 1695US7511357B2Trenched MOSFETs with improved gate-drain (GD) clamp diodesFORCE MOS TECHNOLOGY CORP·Filed 2007·Granted Mar 31, 2009·33 cites·12 claims
- 1795US6657254B2Trench MOSFET device with improved on-resistanceGEN SEMICONDUCTOR INC·Filed 2001·Granted Dec 2, 2003·86 cites·14 claims
- 1895US6031265AEnhancing DMOS device ruggedness by reducing transistor parasitic resistance and by inducing breakdown near gate runners and termination areaMAGEPOWER SEMICONDUCTOR CORP·Filed 1997·Granted Feb 29, 2000·161 cites·15 claims
- 1995US6005271ASemiconductor cell array with high packing densityMAGEPOWER SEMICONDUCTOR CORP·Filed 1997·Granted Dec 21, 1999·133 cites·19 claims
- 2095US5981344ATrench field effect transistor with reduced punch-through susceptibility and low RDSonSILICONIX INC·Filed 1996·Granted Nov 9, 1999·117 cites·6 claims
- 2195US5917216ATrenched field effect transistor with PN depletion barrierSILICONIX INC·Filed 1996·Granted Jun 29, 1999·164 cites·14 claims
- 2295US5753529ASurface mount and flip chip technology for total integrated circuit isolationSILICONIX INC·Filed 1995·Granted May 19, 1998·183 cites·7 claims
- 2395US5614751AEdge termination structure for power MOSFETSILICONIX INC·Filed 1996·Granted Mar 25, 1997·134 cites·16 claims
- 2495US5578851ATrenched DMOS transistor having thick field oxide in termination regionSILICONIX INC·Filed 1996·Granted Nov 26, 1996·136 cites·5 claims
- 2595US5474943AMethod for fabricating a short channel trenched DMOS transistorSILICONIX INC·Filed 1994·Granted Dec 12, 1995·116 cites·6 claims
- 2694US6281547B1Power transistor cells provided with reliable trenched source contacts connected to narrower source manufactured without a source maskMEGAMOS CORP·Filed 1997·Granted Aug 28, 2001·127 cites·10 claims
- 2794US5907776AMethod of forming a semiconductor structure having reduced threshold voltage and high punch-through toleranceMAGEPOWER SEMICONDUCTOR CORP·Filed 1997·Granted May 25, 1999·130 cites·29 claims
- 2894US5767578ASurface mount and flip chip technology with diamond film passivation for total integated circuit isolationSILICONIX INC·Filed 1996·Granted Jun 16, 1998·176 cites·19 claims
- 2993US5532179AMethod of making a field effect trench transistor having lightly doped epitaxial region on the surface portion thereofSILICONIX INC·Filed 1995·Granted Jul 2, 1996·112 cites·2 claims
- 3093US5341011AShort channel trenched DMOS transistorSILICONIX INC·Filed 1993·Granted Aug 23, 1994·94 cites·11 claims
- 3193US5316959ATrenched DMOS transistor fabrication using six masksSILICONIX INC·Filed 1992·Granted May 31, 1994·117 cites·8 claims
- 3292US7052982B2Method for manufacturing a superjunction device with wide mesasTHIRD DIMENSION 3D SC INC·Filed 2004·Granted May 30, 2006·60 cites·28 claims
- 3392US6762098B2Trench DMOS transistor with embedded trench schottky rectifierGEN SEMICONDUCTOR INC·Filed 2003·Granted Jul 13, 2004·59 cites·6 claims
- 3492US6376315B1Method of forming a trench DMOS having reduced threshold voltageGEN SEMICONDUCTOR INC·Filed 2000·Granted Apr 23, 2002·67 cites·24 claims
- 3592US6172398B1Trenched DMOS device provided with body-dopant redistribution-compensation region for preventing punch through and adjusting threshold voltageMAGEPOWER SEMICONDUCTOR CORP·Filed 1997·Granted Jan 9, 2001·104 cites·10 claims
- 3692US5629543ATrenched DMOS transistor with buried layer for reduced on-resistance and ruggednessSILICONIX INC·Filed 1995·Granted May 13, 1997·165 cites·12 claims
- 3792US5404040AStructure and fabrication of power MOSFETs, including termination structuresSILICONIX INC·Filed 1993·Granted Apr 4, 1995·104 cites·31 claims
- 3891US7354818B2Process for high voltage superjunction terminationTHIRD DIMENSION 3D SC INC·Filed 2005·Granted Apr 8, 2008·18 cites·13 claims
- 3991US7041560B2Method of manufacturing a superjunction device with conventional terminationsTHIRD DIMENSION 3D SC INC·Filed 2004·Granted May 9, 2006·49 cites·20 claims
- 4091US6674124B2Trench MOSFET having low gate chargeGEN SEMICONDUCTOR INC·Filed 2001·Granted Jan 6, 2004·49 cites·16 claims
- 4191US6051468AMethod of forming a semiconductor structure with uniform threshold voltage and punch-through toleranceMAGEPOWER SEMICONDUCTOR CORP·Filed 1997·Granted Apr 18, 2000·111 cites·21 claims
- 4291US5468982ATrenched DMOS transistor with channel block at cell trench cornersSILICONIX INC·Filed 1994·Granted Nov 21, 1995·89 cites·21 claims
- 4390US8058670B2Insulated gate bipolar transistor (IGBT) with monolithic deep body clamp diode to prevent latch-upHSHIEH FWU-IUAN·Filed 2009·Granted Nov 15, 2011·19 cites·20 claims
- 4490US8022471B2Trench metal oxide semiconductor field effect transistor (MOSFET) with low gate to drain coupled charges (Qgd) structuresFORCE MOS TECHNOLOGY CORP·Filed 2008·Granted Sep 20, 2011·13 cites·10 claims
- 4590US7439583B2Tungsten plug drain extensionTHIRD DIMENSION 3D SC INC·Filed 2005·Granted Oct 21, 2008·15 cites·12 claims
- 4690US6518127B2Trench DMOS transistor having a double gate structureGEN SEMICONDUCTOR INC·Filed 2001·Granted Feb 11, 2003·48 cites·2 claims
- 4789US6548860B1DMOS transistor structure having improved performanceGEN SEMICONDUCTOR INC·Filed 2000·Granted Apr 15, 2003·47 cites·22 claims
- 4888US7704864B2Method of manufacturing a superjunction device with conventional terminationsTHIRD DIMENSION 3D SC INC·Filed 2006·Granted Apr 27, 2010·11 cites·21 claims
- 4988US7687851B2High density trench MOSFET with reduced on-resistanceM MOS SEMICONDUCTOR SDN BHD·Filed 2005·Granted Mar 30, 2010·17 cites·16 claims
- 5088US7109110B2Method of manufacturing a superjunction deviceTHIRD DIMENSION 3D SC INC·Filed 2004·Granted Sep 19, 2006·35 cites·5 claims
Showing the top 50 of 162 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →