Assignee
MEGAMOS CORP
US·17 granted patents·1,124 citations·filing 1996–1997
Top patents by PatentIndex Score
17 records- 0198US5877528AStructure to provide effective channel-stop in termination areas for trenched power transistorsMEGAMOS CORP·Filed 1997·Granted Mar 2, 1999·287 cites·9 claims
- 0297US5895951AMOSFET structure and fabrication process implemented by forming deep and narrow doping regions through doping trenchesMEGAMOS CORP·Filed 1996·Granted Apr 20, 1999·239 cites·11 claims
- 0394US6281547B1Power transistor cells provided with reliable trenched source contacts connected to narrower source manufactured without a source maskMEGAMOS CORP·Filed 1997·Granted Aug 28, 2001·127 cites·10 claims
- 0486US5907169ASelf-aligned and process-adjusted high density power transistor with gate sidewalls provided with punch through prevention and reduced JFET resistanceMEGAMOS CORP·Filed 1997·Granted May 25, 1999·65 cites·20 claims
- 0581US5930630AMethod for device ruggedness improvement and on-resistance reduction for power MOSFET achieved by novel source contact structureMEGAMOS CORP·Filed 1997·Granted Jul 27, 1999·72 cites·7 claims
- 0680US5986304APunch-through prevention in trenched DMOS with poly-silicon layer covering trench cornersMEGAMOS CORP·Filed 1997·Granted Nov 16, 1999·47 cites·9 claims
- 0771US5763914ACell topology for power transistors with increased packing densityMEGAMOS CORP·Filed 1997·Granted Jun 9, 1998·32 cites·37 claims
- 0870US6104060ACost savings for manufacturing planar MOSFET devices achieved by implementing an improved device structure and fabrication process eliminating passivation layer and/or field plateMEGAMOS CORP·Filed 1996·Granted Aug 15, 2000·40 cites·1 claims
- 0970US5729037AMOSFET structure and fabrication process for decreasing threshold voltageMEGAMOS CORP·Filed 1996·Granted Mar 17, 1998·30 cites·7 claims
- 1069US5923065APower MOSFET device manufactured with simplified fabrication processes to achieve improved ruggedness and product cost savingsMEGAMOS CORP·Filed 1996·Granted Jul 13, 1999·30 cites·6 claims
- 1167US5668026ADMOS fabrication process implemented with reduced number of masksMEGAMOS CORP·Filed 1996·Granted Sep 16, 1997·34 cites·7 claims
- 1266US5731611AMOSFET transistor cell manufactured with selectively implanted punch through prevent and threshold reductoin zonesMEGAMOS CORP·Filed 1996·Granted Mar 24, 1998·26 cites·12 claims
- 1365US5877529AMosfet termination design and core cell configuration to increase breakdown voltage and to improve device ruggednessMEGAMOS CORP·Filed 1997·Granted Mar 2, 1999·24 cites·16 claims
- 1465US5747853ASemiconductor structure with controlled breakdown protectionMEGAMOS CORP·Filed 1996·Granted May 5, 1998·30 cites·18 claims
- 1556US6046078ASemiconductor device fabrication with reduced masking stepsMEGAMOS CORP·Filed 1997·Granted Apr 4, 2000·16 cites·12 claims
- 1653US5883416AGate-contact structure to prevent contact metal penetration through gate layer without affecting breakdown voltageMEGAMOS CORP·Filed 1997·Granted Mar 16, 1999·14 cites·8 claims
- 1749US5883410AEdge wrap-around protective extension for covering and protecting edges of thick oxide layerMEGAMOS CORP·Filed 1997·Granted Mar 16, 1999·11 cites·9 claims
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