Inventor · disambiguated record
Eiji Nishibe
Also filed as: NISHIBE EIJI
19 granted patents·2 pending applications·157 citations·filing 2001–2007
94Inventor score
Files withSANYO ELECTRIC CO20
Top patents by PatentIndex Score
21 records- 0185US6399468B2Semiconductor device and method of manufacturing the sameSANYO ELECTRIC CO·Filed 2001·Granted Jun 4, 2002·35 cites·5 claims
- 0277US6559504B2Lateral double diffused MOS transistorSANYO ELECTRIC CO·Filed 2002·Granted May 6, 2003·20 cites·6 claims
- 0374US6963109B2Semiconductor device and method for manufacturing the sameSANYO ELECTRIC CO·Filed 2001·Granted Nov 8, 2005·17 cites·10 claims
- 0468US6713331B2Semiconductor device manufacturing using one element separation filmSANYO ELECTRIC CO·Filed 2001·Granted Mar 30, 2004·12 cites·6 claims
- 0568US6608336B2Lateral double diffused MOS transistorSANYO ELECTRIC CO·Filed 2001·Granted Aug 19, 2003·14 cites·8 claims
- 0665US7157779B2Semiconductor device with triple surface impurity layersSANYO ELECTRIC CO·Filed 2004·Granted Jan 2, 2007·11 cites·2 claims
- 0762US7056797B2Semiconductor device and method of manufacturing the sameSANYO ELECTRIC CO·Filed 2001·Granted Jun 6, 2006·8 cites·21 claims
- 0859US6844593B2Semiconductor deviceSANYO ELECTRIC CO·Filed 2003·Granted Jan 18, 2005·9 cites·9 claims
- 0958US6696734B2LDD high voltage MOS transistorSANYO ELECTRIC CO·Filed 2001·Granted Feb 24, 2004·6 cites·6 claims
- 1053US6893926B2Manufacturing method of semiconductor device with protection against electrostatic dischargeSANYO ELECTRIC CO·Filed 2003·Granted May 17, 2005·6 cites·6 claims
- 1153US6638827B2Semiconductor device and method of manufacturing itSANYO ELECTRIC CO·Filed 2001·Granted Oct 28, 2003·5 cites·8 claims
- 1252US6740932B2Semiconductor device for improving sustaining voltageSANYO ELECTRIC CO·Filed 2001·Granted May 25, 2004·5 cites·6 claims
- 1349US7161210B2Semiconductor device with source and drain regionsSANYO ELECTRIC CO·Filed 2003·Granted Jan 9, 2007·3 cites·8 claims
- 1446US7087961B2Semiconductor device with reduced on-state resistanceSANYO ELECTRIC CO·Filed 2003·Granted Aug 8, 2006·2 cites·7 claims
- 1543US6750518B2Semiconductor deviceSANYO ELECTRIC CO·Filed 2002·Granted Jun 15, 2004·2 cites·6 claims
- 1642US6707119B2Polygonal structure semiconductor deviceSANYO ELECTRIC CO·Filed 2002·Granted Mar 16, 2004·2 cites·6 claims
- 1739US7611957B2Method of manufacturing semiconductor deviceSANYO ELECTRIC CO·Filed 2007·Granted Nov 3, 2009·0 cites·2 claims
- 1839US7294551B2Semiconductor device and method for manufacturing the sameSANYO ELECTRIC CO·Filed 2004·Granted Nov 13, 2007·0 cites·10 claims
- 1939US7217612B2Manufacturing method for a semiconductor device with reduced local currentSANYO ELECTRIC CO·Filed 2004·Granted May 15, 2007·0 cites·7 claims
- 2037US2002072159A1Semiconductor device and manufacturing method thereofFiled 2001·Application pending·0 cites
- 2133US2005116285A1Semiconductor device and manufacturing method thereofSANYO ELECTRIC CO·Filed 2004·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →