Semiconductor device and manufacturing method thereof

Abstract

A semiconductor device including: a first gate insulating film which is pattern-formed on an N type well region within a P type semiconductor substrate; a second gate insulating film which is formed on the semiconductor substrate except for this first gate insulating film; a gate electrode, which is formed in such a manner that this gate electrode is bridged over the first gate insulating film and the second gate insulating film; a P type body region which is formed in such a manner that this P type body region is located adjacent to the gate electrode; an N type source region and a channel region, which are formed within this P type body region; and an N type drain region which is formed at a position separated from the P type body region.

What is claimed is:  
     
         1 . A semiconductor device comprising: 
 a first gate insulating film and a second gate insulating film, both formed on a semiconductor layer;    a gate electrode formed to be bridged over said first gate insulating film and said second gate insulating film;    a body region formed adjacent to said gate electrode;    a source region having an opposite conductive type to said body region and formed within said body region; and    a drain region having the opposite conductive type to said body region and formed at a position separated from said body region,    wherein said first gate insulating film is manufactured in such a manner that an insulating film formed on said semiconductor layer is patterned by way of the LOCOS method.    
     
     
         2 . The semiconductor device as claimed in  claim 1 , wherein said first gate insulating film have a tapered surface.  
     
     
         3 . The semiconductor device as claimed in  claim 1 , wherein said first gate insulating film is not formed at a position lower than at least a surface position of said semiconductor layer.  
     
     
         4 . The semiconductor device as claimed in  claim 1 , wherein said first gate insulating film is not formed at a position lower than a surface position of said semiconductor layer in such a manner that local current crowding is not produced between at least an edge portion of said body region and an edge portion of said first gate insulating film.  
     
     
         5 . A method for manufacturing a semiconductor device, comprising the steps of: 
 forming a body region by implanting to diffuse an impurity in a predetermined region of a semiconductor layer;    after field-oxidizing a surface region of said semiconductor layer by way of the LOCOS method to form an insulating film, forming a first insulating film by patterning said insulating film while a resist film formed on a predetermined region of said insulating film is employed as a mask;    forming a second gate insulating film on said semiconductor layer other than said first gate insulating film, and then forming a gate electrode so that said gate electrode is bridged over said first gate insulating film and said second gate insulating film; and    forming a source region and drain region by implanting an impurity of an opposite conductive type to said body region into both a source forming region formed within said body region and a drain forming region formed within said semiconductor layer while a resist film having an opening is employed as a mask.    
     
     
         6 . The semiconductor device manufacturing method as claimed in  claim 5 , wherein a device separation film is formed in the same step of forming said first gate insulating film.  
     
     
         7 . The semiconductor device manufacturing method as claimed in  claim 5 , wherein said first gate insulating film is not formed at a position lower than at least a surface position of said semiconductor layer in the step of forming said first gate insulating film.  
     
     
         8 . The semiconductor device manufacturing method as claimed in  claim 5 , wherein, in the step of forming the first gate insulating film, said first gate insulating film is not formed at a position lower than a surface position of said semiconductor layer so that local current crowding is not produced between at least an edge portion of said body region and an edge portion of said first gate insulating film.