Inventor · disambiguated record
Rohit Pal
Also filed as: PAL ROHIT
45 granted patents·15 pending applications·851 citations·filing 2003–2017
98Inventor score
Top patents by PatentIndex Score
60 records- 0198US9362180B2Integrated circuit having multiple threshold voltagesGLOBALFOUNDRIES INC·Filed 2014·Granted Jun 7, 2016·425 cites·20 claims
- 0297US7534689B2Stress enhanced MOS transistor and methods for its fabricationADVANCED MICRO DEVICES INC·Filed 2006·Granted May 19, 2009·74 cites·20 claims
- 0397US7195036B2Thermal micro-valves for micro-integrated devicesUNIV MICHIGAN·Filed 2003·Granted Mar 27, 2007·104 cites·11 claims
- 0495US9209186B1Threshold voltage control for mixed-type non-planar semiconductor devicesGLOBALFOUNDRIES INC·Filed 2014·Granted Dec 8, 2015·20 cites·13 claims
- 0594US7932143B1Methods for protecting gate stacks during fabrication of semiconductor devices and semiconductor devices fabricated from such methodsGLOBALFOUNDRIES INC·Filed 2009·Granted Apr 26, 2011·32 cites·17 claims
- 0692US9455201B2Integration method for fabrication of metal gate based multiple threshold voltage devices and circuitsGLOBALFOUNDRIES INC·Filed 2014·Granted Sep 27, 2016·18 cites·17 claims
- 0792US9362284B2Threshold voltage control for mixed-type non-planar semiconductor devicesGLOBALFOUNDRIES INC·Filed 2015·Granted Jun 7, 2016·7 cites·7 claims
- 0892US8076209B2Methods for fabricating MOS devices having highly stressed channelsYANG FRANK BIN·Filed 2010·Granted Dec 13, 2011·17 cites·20 claims
- 0991US7670934B1Methods for fabricating MOS devices having epitaxially grown stress-inducing source and drain regionsGLOBALFOUNDRIES INC·Filed 2009·Granted Mar 2, 2010·23 cites·21 claims
- 1090US7767534B2Methods for fabricating MOS devices having highly stressed channelsADVANCED MICRO DEVICES INC·Filed 2008·Granted Aug 3, 2010·16 cites·13 claims
- 1189US8294211B2Semiconductor transistor device structure with back side gate contact plugs, and related manufacturing methodYANG BIN·Filed 2010·Granted Oct 23, 2012·11 cites·11 claims
- 1288US7939852B2Transistor device having asymmetric embedded strain elements and related manufacturing methodGLOBALFOUNDRIES INC·Filed 2008·Granted May 10, 2011·10 cites·10 claims
- 1386US8026539B2Metal oxide semiconductor devices having doped silicon-compromising capping layers and methods for fabricating the sameGLOBALFOUNDRIES INC·Filed 2009·Granted Sep 27, 2011·13 cites·23 claims
- 1486US7994014B2Semiconductor devices having faceted silicide contacts, and related fabrication methodsADVANCED MICRO DEVICES INC·Filed 2008·Granted Aug 9, 2011·11 cites·5 claims
- 1585US7960229B2Metal oxide semiconductor transistor with reduced gate height, and related fabrication methodsGLOBALFOUNDRIES INC·Filed 2008·Granted Jun 14, 2011·10 cites·10 claims
- 1684US8148750B2Transistor device having asymmetric embedded strain elements and related manufacturing methodPAL ROHIT·Filed 2011·Granted Apr 3, 2012·5 cites·9 claims
- 1783US8198192B2Adjusting threshold voltage for sophisticated transistors by diffusing a gate dielectric cap layer material prior to gate dielectric stabilizationCARTER RICHARD·Filed 2010·Granted Jun 12, 2012·6 cites·18 claims
- 1882US8222673B2Self-aligned embedded SiGe structure and method of manufacturing the sameGREENE BRIAN J·Filed 2010·Granted Jul 17, 2012·5 cites·11 claims
- 1980US8598009B2Self-aligned embedded SiGe structure and method of manufacturing the sameGREENE BRIAN J·Filed 2012·Granted Dec 3, 2013·4 cites·20 claims
- 2079US9875936B1Spacer defined fin growth and differential fin widthGLOBALFOUNDRIES INC·Filed 2016·Granted Jan 23, 2018·2 cites·11 claims
- 2174US8551599B2Reconfigurable microactuator and method of configuring sameHUA ZHISHAN·Filed 2009·Granted Oct 8, 2013·4 cites·9 claims
- 2272US8664066B2Formation of a channel semiconductor alloy by forming a nitride based hard mask layerPAL ROHIT·Filed 2012·Granted Mar 4, 2014·3 cites·20 claims
- 2372US7838308B2Method of controlling embedded material/gate proximityADVANCED MICRO DEVICES INC·Filed 2008·Granted Nov 23, 2010·3 cites·22 claims
- 2471US9159567B1Replacement low-K spacerGLOBALFOUNDRIES INC·Filed 2014·Granted Oct 13, 2015·3 cites·12 claims
- 2568US8525289B2Adjusting threshold voltage for sophisticated transistors by diffusing a gate dielectric cap layer material prior to gate dielectric stabilizationCARTER RICHARD·Filed 2012·Granted Sep 3, 2013·2 cites·7 claims
- 2668US8217463B2Methods for protecting gate stacks during fabrication of semiconductor devices and semiconductor devices fabricated from such methodsPAL ROHIT·Filed 2011·Granted Jul 10, 2012·2 cites·20 claims
- 2768US8124515B2Gate etch optimization through silicon dopant profile changeNG MAN FAI·Filed 2009·Granted Feb 28, 2012·2 cites·12 claims
- 2866US8373228B2Semiconductor transistor device structure with back side source/drain contact plugs, and related manufacturing methodGLOBALFOUNDRIES INC·Filed 2010·Granted Feb 12, 2013·2 cites·14 claims
- 2966US8293609B2Method of manufacturing a transistor device having asymmetric embedded strain elementsPAL ROHIT·Filed 2012·Granted Oct 23, 2012·1 cites·12 claims
- 3065US8119464B2Fabrication of semiconductors with high-K/metal gate electrodesPAL ROHIT·Filed 2009·Granted Feb 21, 2012·3 cites·10 claims
- 3164US8445964B2Fabrication of semiconductors with high-K/metal gate electrodesPAL ROHIT·Filed 2012·Granted May 21, 2013·2 cites·19 claims
- 3264US7763508B2Methods for protecting gate stacks during fabrication of semiconductor devices and semiconductor devices fabricated from such methodsGLOBALFOUNDRIES INC·Filed 2008·Granted Jul 27, 2010·2 cites·19 claims
- 3363US7704840B2Stress enhanced transistor and methods for its fabricationADVANCED MICRO DEVICES INC·Filed 2006·Granted Apr 27, 2010·2 cites·18 claims
- 3462US7682845B2Methods for calibrating a process for growing an epitaxial silicon film and methods for growing an epitaxial silicon filmGLOBALFOUNDRIES INC·Filed 2007·Granted Mar 23, 2010·1 cites·16 claims
- 3562US7632727B2Method of forming stepped recesses for embedded strain elements in a semiconductor deviceGLOBALFOUNDRIES INC·Filed 2008·Granted Dec 15, 2009·1 cites·14 claims
- 3661US9093560B2Gate height uniformity in semiconductor devicesGLOBALFOUNDRIES INC·Filed 2013·Granted Jul 28, 2015·1 cites·14 claims
- 3760US8673710B2Formation of a channel semiconductor alloy by a nitride hard mask layer and an oxide maskKRONHOLZ STEPHAN·Filed 2011·Granted Mar 18, 2014·1 cites·22 claims
- 3860US8664057B2High-K metal gate electrode structures formed by early cap layer adaptationPAL ROHIT·Filed 2012·Granted Mar 4, 2014·1 cites·20 claims
- 3960US7893496B2Stress enhanced transistorADVANCED MICRO DEVICES INC·Filed 2009·Granted Feb 22, 2011·1 cites·25 claims
- 4058US8674458B2Transistors with embedded strain-inducing material formed in cavities provided by an oxidizing etch processKRONHOLZ STEPHAN-DETLEF·Filed 2012·Granted Mar 18, 2014·1 cites·20 claims
- 4152US9157551B2Reconfigurable microactuator and method of configuring sameUNIV MICHIGAN·Filed 2013·Granted Oct 13, 2015·0 cites·7 claims
- 4251US8390042B2Gate etch optimization through silicon dopant profile changeNG MAN FAI·Filed 2012·Granted Mar 5, 2013·0 cites·8 claims
- 4351US2018130712A1Spacer defined fin growth and differential fin widthGLOBALFOUNDRIES INC·Filed 2017·Application pending·0 cites
- 4449US9349814B2Gate height uniformity in semiconductor devicesGLOBALFOUNDRIES INC·Filed 2015·Granted May 24, 2016·0 cites·20 claims
- 4549US2015055189A1System and method for scanning objectsAUM RES LLC·Filed 2014·Application pending·0 cites
- 4649US2016057302A1System and method for scanning objectsAUM RES LLC·Filed 2014·Application pending·0 cites
- 4747US2010012988A1Metal oxide semiconductor devices having implanted carbon diffusion retardation layers and methods for fabricating the sameADVANCED MICRO DEVICES INC·Filed 2008·Application pending·0 cites
- 4846US2009228132A1Method and apparatus for controlling stressed layer gate proximityLENSING KEVIN R·Filed 2008·Application pending·0 cites
- 4945US8084828B2Methods for protecting gate stacks during fabrication of semiconductor devices and semiconductor devices fabricated from such methodsPAL ROHIT·Filed 2010·Granted Dec 27, 2011·0 cites·16 claims
- 5045US2008237811A1Method for preserving processing history on a waferPAL ROHIT·Filed 2007·Application pending·0 cites
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