Inventor · disambiguated record
Glenn A. Biery
Also filed as: BIERY GLENN A · BIERY GLENN ALLEN
14 granted patents·2 pending applications·249 citations·filing 1992–2009
93Inventor score
Top patents by PatentIndex Score
16 records- 0188US6917108B2Reliable low-k interconnect structure with hybrid dielectricIBM·Filed 2002·Granted Jul 12, 2005·49 cites·32 claims
- 0285US8383483B2High performance CMOS circuits, and methods for fabricating sameIBM·Filed 2009·Granted Feb 26, 2013·10 cites·15 claims
- 0383US7273777B2Formation of fully silicided (FUSI) gate using a dual silicide processIBM·Filed 2005·Granted Sep 25, 2007·9 cites·15 claims
- 0480US5470788AMethod of making self-aligned, lateral diffusion barrier in metal lines to eliminate electromigrationIBM·Filed 1994·Granted Nov 28, 1995·66 cites·12 claims
- 0573US7135398B2Reliable low-k interconnect structure with hybrid dielectricIBM·Filed 2004·Granted Nov 14, 2006·18 cites·28 claims
- 0668US7473975B2Fully silicided metal gate semiconductor device structureIBM·Filed 2007·Granted Jan 6, 2009·3 cites·14 claims
- 0766US6933191B2Two-mask process for metal-insulator-metal capacitors and single mask process for thin film resistorsIBM·Filed 2003·Granted Aug 23, 2005·10 cites·21 claims
- 0864US6597067B1Self-aligned, lateral diffusion barrier in metal lines to eliminate electromigrationIBM·Filed 1997·Granted Jul 22, 2003·36 cites·19 claims
- 0964US5952674ATopography monitorIBM·Filed 1998·Granted Sep 14, 1999·28 cites·12 claims
- 1052US8178433B2Methods for the formation of fully silicided metal gatesBIERY GLENN A·Filed 2008·Granted May 15, 2012·1 cites·12 claims
- 1149US7705405B2Methods for the formation of fully silicided metal gatesIBM·Filed 2004·Granted Apr 27, 2010·3 cites·7 claims
- 1245US5563517ADual channel d.c. low noise measurement system and test methodologyIBM·Filed 1995·Granted Oct 8, 1996·10 cites·6 claims
- 1345US2007152276A1High performance CMOS circuits, and methods for fabricating the sameIBM·Filed 2005·Application pending·0 cites
- 1440US7034400B2Dual damascene interconnect structure using low stress fluorosilicate insulator with copper conductorsIBM·Filed 2003·Granted Apr 25, 2006·0 cites·12 claims
- 1538US5434385ADual channel D.C. low noise measurement system and test methodologyIBM·Filed 1992·Granted Jul 18, 1995·6 cites·16 claims
- 1629US2002076917A1Dual damascene interconnect structure using low stress flourosilicate insulator with copper conductorsFiled 1999·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →